BFR 93AW NPN Silicon RF Transistor * For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 93AW R2s SOT-323 Q62702-F1489 1=B 2=E 3=C Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 50 Base current IB 6 Total power dissipation Ptot TS 104 C Values Unit V mA mW 300 Junction temperature Tj Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 150 C Thermal Resistance Junction - soldering point 1) RthJS 155 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-11-1996 BFR 93AW Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current 12 100 nA - - 100 IEBO A - - 10 hFE IC = 30 mA, VCE = 8 V Semiconductor Group - ICBO VEB = 2 V, IC = 0 DC current gain A - VCB = 10 V, IE = 0 Emitter-base cutoff current - ICES VCE = 20 V, VBE = 0 Collector-base cutoff current V 50 2 100 200 Dec-11-1996 BFR 93AW Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. AC Characteristics Transition frequency fT IC = 30 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance 4.5 pF - 0.62 0.9 - 0.28 - - 1.7 - Cce VCE = 10 V, f = 1 MHz Emitter-base capacitance 6 Ccb VCB = 10 V, f = 1 MHz Collector-emitter capacitance GHz Ceb VEB = 0.5 V, f = 1 MHz F Noise figure dB IC = 5 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz - 2 - f = 1.8 GHz - 3.3 - f = 900 MHz - 15 - f = 1.8 GHz - 10 - f = 900 MHz - 13 - f = 1.8 GHz - 7.5 - Power gain 2) Gma IC = 30 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt Transducer gain |S21e|2 IC = 30 mA, VCE = 8 V, ZS =ZL= 50 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-11-1996 BFR 93AW SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 8.6752 fA BF = 137.63 - NF = 0.93633 - VAF = 20.011 V IKF = 0.33395 A ISE = 2619.3 fA NE = 1.5466 - BR = 59 - NR = 0.88761 - VAR = 26.834 V IKR = 0.015129 A ISC = 0.70823 fA NC = 1.95 - RB = 7.2326 IRB = 0.043806 mA RBM = 3.4649 RE = 1.0075 RC = 0.13193 CJE = 3.1538 fF VJE = 0.70393 V MJE = 0.5071 - TF = 33.388 ps XTF = 0.28319 - VTF = 0.17765 V ITF = 2.5184 mA PTF = 0 deg CJC = 1039.5 fF VJC = 0.72744 V MJC = 0.34565 - XCJC = 0.21422 - TR = 1.1061 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.75935 - TNOM 300 K LBI = 0.57 nH LBO = 0.4 nH LEI = 0.43 nH LEO = 0.5 nH LCI = 0 nH LCO = 0.41 nH CBE = 61 fF CCB = 101 fF CCE = 175 fF All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut fur Mobil-und Satellitenfunktechnik (IMST) (c) 1996 SIEMENS AG Package Equivalent Circuit: Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 4 Dec-11-1996 BFR 93AW Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 400 mW Ptot 300 250 TS 200 150 TA 100 50 0 0 20 40 60 80 100 120 C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 2 10 3 K/W RthJS Ptotmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 Semiconductor Group -4 10 -3 10 -2 -1 10 s 10 tp 0 5 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Dec-11-1996 BFR 93AW Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 1.1 7.0 pF GHz 10V 6.0 Ccb 0.9 fT 8V 5V 5.5 0.8 5.0 0.7 4.5 3V 2V 4.0 0.6 3.5 0.5 3.0 0.4 2.5 0.3 2.0 1V 0.7V 1.5 0.2 1.0 0.1 0.5 0.0 0.0 0 4 8 12 16 V 24 0 10 20 30 40 VR Power Gain Gma, Gms = f(IC) Power Gain Gma, Gms = f(IC) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 60 11 18 dB 10V dB 10V G mA IC 5V 3V 14 5V 3V 9 G 8 2V 2V 7 12 6 10 5 8 4 1V 3 6 1V 2 4 0.7V 1 2 0 0 0 10 Semiconductor Group 20 30 40 mA IC -1 0 60 6 0.7V 10 20 30 40 mA IC 60 Dec-11-1996 BFR 93AW Power Gain Gma, Gms = f(VCE):_____ |S21 |2 Intermodulation Intercept Point IP3=f(IC) = f(VCE):--------- (3rd order, Output, ZS=ZL=50) f = Parameter VCE = Parameter, f = 900MHz 35 16 IC=30mA 0.9GHz dB dBm 0.9GHz G 5V IP3 12 4V 25 10 3V 1.8GHz 20 2V 8 1.8GHz 15 6 1V 10 4 5 2 0 0 0 2 4 6 8 V 12 0 10 20 30 40 V CE Power Gain Gma, Gms = f(f) Power Gain |S21|2= f(f) VCE = Parameter VCE = Parameter 34 dB G 60 32 IC=30mA dB 28 S21 22 20 18 16 14 12 10 8 6 10V 2V 4 0.7V 1.0 Semiconductor Group 1.5 2.0 2.5 GHz f 10V 2V 1V 2 1V 0.5 IC=30mA 26 24 0 0.0 mA IC -2 0.0 3.5 7 0.5 1.0 1.5 2.0 2.5 0.7V GHz 3.5 f Dec-11-1996