IPB80N03S4L-02
IPI80N03S4L-03, IPP80N03S4L-03
OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current1) IDTC=25 °C, VGS=10 V 80 A
TC=100 °C,
VGS=10 V2) 80
Pulsed drain current2) ID,pulse TC=25 °C 320
Avalanche energy, single pulse EAS ID=80 A 260 mJ
Avalanche current, single pulse IAS TC=25 °C 80 A
Gate source voltage VGS ±16 V
Power dissipation Ptot TC=25 °C 136 W
Operating and storage temperature Tj, Tstg -55 ... +175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
Value
VDS 30 V
RDS(on),max (SMD version) 2.4 mΩ
ID80 A
Product Summary
PG-TO220-3-1PG-TO262-3-1PG-TO263-3-2
Type Package Marking
IPB80N03S4L-02 PG-TO263-3-2 4N03L02
IPI80N03S4L-03 PG-TO262-3-1 4N03L03
IPP80N03S4L-03 PG-TO220-3-1 4N03L03
Rev. 2.0 page 1 2007-03-09
IPB80N03S4L-02
IPI80N03S4L-03, IPP80N03S4L-03
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics2)
Thermal resistance, junction - case RthJC - - 1.1 K/W
Thermal resistance, junction -
ambient, leaded RthJA --62
SMD version, device on PCB RthJA minimal footprint - - 62
6 cm2 cooling area3) --40
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID= 1 mA 30 - - V
Gate threshold voltage VGS(th) VDS=VGS, ID=90 µA 1.0 1.5 2.2
Zero gate voltage drain current IDSS
VDS=30 V, VGS=0 V,
Tj=25 °C - 0.01 1 µA
VDS=30 V, VGS=0 V,
Tj=125 °C2) - 10 1000
VDS=18 V, VGS=0 V,
Tj=85 °C2) -560
Gate-source leakage current IGSS VGS=16 V, VDS=0 V - 1 100 nA
Drain-source on-state resistance RDS(on) VGS=4.5 V, ID=40 A - 2.8 3.2 mΩ
VGS=4.5 V, ID=40 A,
SMD version - 2.5 2.9
VGS=10 V, ID=80 A - 2.3 2.7
VGS=10 V, ID=80 A,
SMD version - 2.0 2.4
Values
Rev. 2.0 page 2 2007-03-09
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IPI80N03S4L-03, IPP80N03S4L-03
Parameter Symbol Conditions Unit
min. typ. max.
D
y
namic characteristics2)
Input capacitance Ciss - 7500 9750 pF
Output capacitance Coss - 1900 2500
Reverse transfer capacitance Crss - 100 200
Turn-on delay time td(on) -14-ns
Rise time tr-9-
Turn-off delay time td(off) -62-
Fall time tf-13-
Gate Char
g
e Characteristics2)
Gate to source charge Qgs -2230nC
Gate to drain charge Qgd -1428
Gate charge total Qg- 110 140
Gate plateau voltage Vplateau - 3.1 - V
Reverse Diode
Diode continous forward current2) IS- - 80 A
Diode pulse current2) IS,pulse - - 320
Diode forward voltage VSD
VGS=0 V, IF=80 A,
Tj=25 °C 0.6 0.9 1.3 V
Reverse recovery time2) trr
VR=15 V, IF=IS,
diF/dt=100 A/µs - 120 - ns
Reverse recovery charge2) Qrr - 100 - nC
2) Defined by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
1) Current is limited by bondwire; with an RthJC = 1.1K/W the chip is able to carry 192A at 25°C. For detailed
information see Application Note ANPS071E at www.infineon.com/optimos
TC=25 °C
Values
VGS=0 V, VDS=25 V,
f=1 MHz
VDD=15 V, VGS=10 V,
ID=80 A, RG=3.5 Ω
VDD=24 V, ID=80 A,
VGS=0 to 10 V
Rev. 2.0 page 3 2007-03-09
IPB80N03S4L-02
IPI80N03S4L-03, IPP80N03S4L-03
1 Power dissipation 2 Drain current
Ptot = f(TC); VGS ≥ 6 V ID = f(TC); VGS ≥ 6 V; SMD
3 Safe operating area 4 Max. transient thermal impedance
ID = f(VDS); TC = 25 °C; D = 0; SMD ZthJC = f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
1
10
100
1000
0.1 1 10 100
VDS [V]
ID [A]
single pulse
0.01
0.05
0.1
0.5
100
10-1
10-2
10-3
10-4
10-5
10-6
101
100
10-1
10-2
10-3
tp [s]
ZthJC [K/W]
0
20
40
60
80
100
120
140
160
0 50 100 150 200
TC [°C]
Ptot [W]
0
20
40
60
80
100
0 50 100 150 200
TC [°C]
ID [A]
Rev. 2.0 page 4 2007-03-09
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5 Typ. output characteristics 6 Typ. drain-source on-state resistance
ID = f(VDS); Tj = 25 °C; SMD RDS(on) = f(ID); Tj = 25 °C; SMD
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance
ID = f(VGS); VDS = 6V RDS(on) = f(Tj); ID = 80 A; VGS = 10 V; SMD
parameter: Tj
1
1.5
2
2.5
3
3.5
-60 -20 20 60 100 140 180
Tj [°C]
RDS(on) [mΩ]
2.5 V
3 V
3.5 V
4 V
4.5 V
5 V
10 V
0
40
80
120
160
200
240
280
320
360
01234
VDS [V]
ID [A]
3 V 3.5 V
4 V
4.5 V
5 V
10 V
1
2
3
4
5
6
7
8
9
10
0 50 100 150 200
ID [A]
RDS(on) [mΩ]
-55 °C 25 °C
175 °C
0
50
100
150
200
250
300
350
12345
VGS [V]
ID [A]
Rev. 2.0 page 5 2007-03-09
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IPI80N03S4L-03, IPP80N03S4L-03
9 Typ. gate threshold voltage 10 Typ. capacitances
VGS(th) = f(Tj); VGS = VDS C = f(VDS); VGS = 0 V; f = 1 MHz
parameter: ID
11 Typical forward diode characteristicis 12 Typ. avalanche characteristics
IF = f(VSD)IA S= f(tAV)
parameter: Tjparameter: Tj(start)
25°C
100°C
150°C
1
10
100
1 10 100 1000
tAV [µs]
IAV [A]
25 °C
175 °C
103
102
101
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD [V]
IF [A]
80µA
800µA
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
-60 -20 20 60 100 140 180
Tj [°C]
VGS(th) [V]
Ciss
Coss
Crss
102
103
104
0 5 10 15 20 25 30
VDS [V]
C [pF]
101
Rev. 2.0 page 6 2007-03-09
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13 Typical avalanche energy 14 Typ. drain-source breakdown voltage
EAS = f(Tj)VBR(DSS) = f(Tj); ID = 1 mA
parameter: ID
15 Typ. gate charge 16 Gate charge waveforms
VGS = f(Qgate); ID = 80 A pulsed
parameter: VDD
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
28
29
30
31
32
33
34
-60 -20 20 60 100 140 180
Tj [°C]
VBR(DSS) [V]
8 V
24 V
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120
Qgate [nC]
VGS [V]
80 A
40 A
20 A
0
250
500
750
1000
1250
25 75 125 175
Tj [°C]
EAS [mJ]
Rev. 2.0 page 7 2007-03-09
IPB80N03S4L-02
IPI80N03S4L-03, IPP80N03S4L-03
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2007
All Rights Reserved.
Legal Disclaime
r
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including
without limitation warranties of non‑infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information
on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the
express written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body, or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
Rev. 2.0 page 8 2007-03-09
IPB80N03S4L-02
IPI80N03S4L-03, IPP80N03S4L-03
Revision History
Version ChangesDate
Rev. 2.0 page 9 2007-03-09