-30V, -13A, 9m Features General Description Max rDS(on) = 9.3m at VGS = -10V, ID = -13A This P-Channel MOSFET is producted using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. Max rDS(on) = 14.8m at VGS = -4.5V, ID = -11A Extended VGS range (-25V) for battery applications HBM ESD protection level of 6kV typical (note 3) This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. High performance trench technology for extremely low rDS(on) High power and current handing capability RoHS Compliant D D D D SO-8 S S S G 5 4 6 3 7 2 8 1 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID (Note 1a) Units V 25 V -13 -Pulsed A -65 Power Dissipation for Single Operation PD TJ, TSTG Ratings -30 (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) 1.0 Operating and Storage Temperature W -55 to +150 C Thermal Characteristics RJA Thermal Resistance , Junction to Ambient (Note 1a) 50 C/W RJC Thermal Resistance , Junction to Case (Note 1) 25 C/W Package Marking and Ordering Information Device Marking FDS6679AZ Device FDS6679AZ (c)2009 Semiconductor Components Industries, LLC. October-2017, Rev. 2 Reel Size 13'' 1 Tape Width 12mm Quantity 2500 units Publication Order Number: FDS6679AZ/D FDS6679AZ P-Channel PowerTrench(R) MOSFET FDS6679AZ P-Channel PowerTrench(R) MOSFET Symbol Parameter Test Conditions Min -30 Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250A, VGS = 0V BVDSS TJ Breakdown Voltage Temperature Coefficient ID = -250A, referenced to 25C V IDSS Zero Gate Voltage Drain Current VDS = -24V, VGS=0V -1 A IGSS Gate to Source Leakage Current VGS = 25V, VDS=0V 10 A -3 V -20 mV/C On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250A VGS(th) TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250A, referenced to 25C rDS(on) gFS Drain to Source On Resistance Forward Transconductance -1 -1.9 6.5 mV/C VGS = -10V, ID = -13A 7.7 9.3 VGS = -4.5V, ID = -11A 11.8 14.8 VGS = -10V, ID = -13A, TJ = 125C 10.7 13.4 VDS = -5V, ID = -13A m 55 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -15V, VGS = 0V, f = 1MHz 2890 3845 pF 500 665 pF 495 745 pF 13 24 ns 15 27 ns 210 336 ns 92 148 ns 68 96 nC 38 54 nC Switching Characteristics (Note 2) td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain Charge VDD = -15V, ID = -1A VGS = -10V, RGS = 6 VDS = -15V, VGS = -10V, ID = -13A VDS = -15V, VGS = -5V, ID = -13A 10 nC 17 nC Drain-Source Diode Characteristic VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = -2.1A -1.2 V trr Reverse Recovery Time IF = -13A, di/dt = 100A/s -0.7 40 ns Qrr Reverse Recovery Charge IF = -13A, di/dt = 100A/s -31 nC Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50C/W when mounted on a 1 in2 pad of 2 oz copper b)105C/W when mounted on a .04 in2 pad of 2 oz copper Scale 1 : 1 on letter size paper 2: Pulse Test:Pulse Width <300s, Duty Cycle <2.0% 3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. www.onsemi.com 2 c) 125C/W when mounted on a minimun pad FDS6679AZ P-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 50 VGS = - 10V VGS = - 5V 40 VGS = - 4.5V 30 VGS = - 4V 20 VGS = - 3.5V 10 0 VGS = - 3V 0 1 2 3 -VDS, DRAIN TO SOURCE VOLTAGE (V) 4 0.5 0.8 -40 0 40 80 120 TJ, JUNCTION TEMPERATURE (oC) 10 20 30 40 50 -ID, DRAIN CURRENT(A) 60 70 50 40 TJ = 150oC 20 TJ = 25oC TJ = -55oC 2.5 3.0 3.5 4.0 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics 20 TJ = 150oC 10 TJ = 25oC 10 4.5 6.0 7.5 9.0 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs Gate to Source Voltage -IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 0 2.0 0 0 3.0 160 70 10 VGS = - 10V DUTY CYCLE = 0.5%MAX 1.0 30 VGS = - 5V 1.0 ID = -13A PULSE DURATION = 80s VGS = -10V Figure 3. Normalized On Resistance vs Junction Temperature -ID, DRAIN CURRENT (A) 1.5 30 1.2 60 VGS = - 4.5V 2.0 ID = -13A 0.6 -80 VGS = - 4V 2.5 1.6 1.4 VGS = - 3.5V 3.0 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage rDS(on), DRAIN TO SOURCE NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 1. On Region Characteristics PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 3.5 ON-RESISTANCE (m) -ID, DRAIN CURRENT (A) 60 4.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 70 100 VGS = 0V 10 1 TJ = 150oC TJ = 25oC 0.1 TJ = -55oC 0.01 1E-3 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current www.onsemi.com 3 1.4 FDS6679AZ P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) 10 10000 VDD = -10V 6 VDD = -15V 4 Ciss CAPACITANCE (pF) 8 VDD = -20V Coss 1000 Crss 2 0 f = 1MHz VGS = 0V 0 15 30 45 60 Qg, GATE CHARGE(nC) 100 0.1 75 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage -IAS, AVALANCHE CURRENT(A) 1000 100 -Ig(uA) 10 TJ = 150oC 1 0.1 TJ = 25oC 0.01 1E-3 1E-4 0 5 10 15 20 -VGS(V) 25 30 20 10 TJ = 25oC TJ = 125oC 1 -2 10 35 Figure 9. Ig vs VGS -1 0 1 100 us ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VGS = -10V 10 8 VGS = -4.5V 4 10 1 ms 1 10 ms THIS AREA IS LIMITED BY rDS(on) 50 75 100 125 TA, AMBIENT TEMPERATURE (oC) 150 100 ms 1s SINGLE PULSE TJ = MAX RATED 0.1 10 s RJA = 125 oC/W 2 0 25 10 100 14 6 2 10 10 10 tAV, TIME IN AVALANCHE(ms) Figure 10. Unclamped Inductive Switching Capability 16 12 30 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 0.01 0.01 DC TA = 25 oC 0.1 1 10 100 200 VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Maximum Continuous Drain Current vs Ambient Temperature Figure 12. Forward Bias Safe Operating Area www.onsemi.com 4 FDS6679AZ P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 4 P(PK), PEAK TRANSIENT POWER (W) 10 VGS = -10 V 3 10 2 10 SINGLE PULSE RJA = 125 oC/W 10 TA = 25 oC 1 0.5 -4 10 -3 10 -2 10 -1 10 1 2 10 3 10 10 t, PULSE WIDTH (sec) Figure 13. Single Pulse Maximum Power Dissipation NORMALIZED THERMAL IMPEDANCE, ZJA 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 -1 10 -2 10 PDM t1 SINGLE PULSE -3 t2 o 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA RJA = 125 C/W -4 10 -4 10 -3 10 -2 10 -1 10 1 10 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Junction-to-Ambient Transient Thermal Response Curve www.onsemi.com 5 2 10 3 10 FDS6679AZ P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com (c) Semiconductor Components Industries, LLC N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com