FDS6679AZ P-Channel PowerTrench® MOSFET
©2009 Semiconductor Components Industries, LLC.
October-2017, Rev. 2
Publication Order Number:
FDS6679AZ/D
1
FDS6679AZ
P-Channel PowerTrench® MOSFET
-30V, -13A, 9mΩ
General Description
This P-Channel MOSFET is producted using ON
Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers
and Portable Battery Packs.
Features
Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A
Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A
Extended VGS range (-25V) for battery applications
HBM ESD protection level of 6kV typical (note 3)
High performance trench technology for extremely low
rDS(on)
High power and current handing capability
RoHS Compliant
S
D
S
S
SO-8
D
D
D
G
1
7
5
2
8
4
6 3
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage -30 V
VGS Gate to Source Voltage ±25 V
ID
Drain Current -Continuous (Note 1a) -13 A
-Pulsed -65
PD
Power Dissipation for Single Operation (Note 1a) 2.5
W (Note 1b) 1.2
(Note 1c) 1.0
TJ, TSTG Operating and Storage Temperature -55 to +150 °C
RθJA Thermal Resistance , Junction to Ambient (Note 1a) 50 °C/W
RθJC Thermal Resistance , Junction to Case (Note 1) 25 °C/W
Device Marking Device Reel Size Tape Width Quantity
FDS6679AZ FDS6679AZ 13’’ 12mm 2500 units
FDS6679AZ P-Channel PowerTrench® MOSFET
www.onsemi.com
2
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V -30 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = -250µA, referenced to
25°C-20 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = -24V, VGS=0V -1 µA
IGSS Gate to Source Leakage Current VGS = ±25V, VDS=0V ±10 µA
On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250µA-1 -1.9 -3 V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250µA, referenced to
25°C 6.5 mV/°C
rDS(on) Drain to Source On Resistance
VGS = -10V, ID = -13A 7.7 9.3
mΩ
VGS = -4.5V, ID = -11A 11.8 14.8
VGS = -10V, ID = -13A,
TJ = 125°C10.7 13.4
gFS Forward Transconductance VDS = -5V, ID = -13A 55 S
(Note 2)
Dynamic Characteristics
Ciss Input Capacitance VDS = -15V, VGS = 0V,
f = 1MHz
2890 3845 pF
Coss Output Capacitance 500 665 pF
Crss Reverse Transfer Capacitance 495 745 pF
Switching Characteristics (Note 2)
td(on) Turn-On Delay Time
VDD = -15V, ID = -1A
VGS = -10V, RGS = 6Ω
13 24 ns
trRise Time 15 27 ns
td(off) Turn-Off Delay Time 210 336 ns
tfFall Time 92 148 ns
QgTotal Gate Charge VDS = -15V, VGS = -10V,
ID = -13A 68 96 nC
QgTotal Gate Charge VDS = -15V, VGS = -5V,
ID = -13A
38 54 nC
Qgs Gate to Source Gate Charge 10 nC
Qgd Gate to Drain Charge 17 nC
Drain-Source Diode Characteristic
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = -2.1A -0.7 -1.2 V
trr Reverse Recovery Time IF = -13A, di/dt = 100A/µs40 ns
Qrr Reverse Recovery Charge IF = -13A, di/dt = 100A/µs-31 nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design.
Scale 1 : 1 on letter size paper
2: Pulse Test:Pulse Width <300µs, Duty Cycle <2.0%
3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
a) 50°C/W when
mounted on a 1 in2
pad of 2 oz copper
b)105°C/W when
mounted on a .04 in2
pad of 2 oz copper
minimun pad
c) 125°C/W when
mounted on a
FDS6679AZ P-Channel PowerTrench® MOSFET
www.onsemi.com
3
Typical Characteristics TJ = 25°C unless otherwise noted
Figure 1. On Region Characteristics
01234
0
10
20
30
40
50
60
70
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = - 5V
VGS = - 4V
VGS = - 3V
VGS = - 3.5V
VGS = - 4.5V
VGS = - 10V
-ID, DRAIN CURRENT (A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 2. Normalized
0 10203040506070
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT(A)
VGS = - 10V
VGS = - 5V
VGS = - 4.5V
VGS = - 4V
VGS = - 3.5V
On-Resistance vs Drain
Current and Gate Voltage
Figure 3.
-80 -40 0 40 80 120 160
0.6
0.8
1.0
1.2
1.4
1.6
ID = -13A
VGS = -10V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ, JUNCTION TEMPERATURE (oC)
Normalized On Resistance vs Junction
Temperature
Figure 4.
3.04.56.07.59.0
0
10
20
30
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
TJ = 150oC
TJ = 25oC
ID = -13A
rDS(on), DRAIN TO SOURCE
ON-RESISTANCE (mΩ)
-VGS, GATE TO SOURCE VOLTAGE (V)
10
On-Resistance vs Gate to Source
Voltage
Figure 5. Transfer Characteristics
2.0 2.5 3.0 3.5 4.0 4.5
0
10
20
30
40
50
60
70
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
TJ = -55oC
TJ = 25oC
TJ = 150oC
-ID, DRAIN CURRENT (A)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
1E-3
0.01
0.1
1
10
100
TJ = -55oC
TJ = 25oC
TJ = 150oC
VGS = 0V
-IS, REVERSE DRAIN CURRENT (A)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode Forward
Voltage vs Source Current
FDS6679AZ P-Channel PowerTrench® MOSFET
www.onsemi.com
4
Figure 7.
0 1530456075
0
2
4
6
8
10
VDD = -20V
VDD = -10V
-VGS, GATE TO SOURCE VOLTAGE(V)
Qg, GATE CHARGE(nC)
VDD = -15V
Gate Charge Characteristics Figure 8.
0.1 1 10
100
1000
10000
f = 1MHz
VGS = 0V
CAPACITANCE (pF)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
30
Capacitance vs Drain to Source Voltage
Figure 9. Ig vs VGS
0 5 10 15 20 25 30 35
1E-4
1E-3
0.01
0.1
1
10
100
1000
TJ = 150oC
TJ = 25oC
-Ig(uA)
-VGS(V)
Figure 10.
10-2 10-1 100101102
1
10
TJ = 25oC
TJ = 125oC
-IAS, AVALANCHE CURRENT(A)
20
tAV, TIME IN AVALANCHE(ms)
Unclamped Inductive Switching
Capability
Figure 11.
25 50 75 100 125 150
0
2
4
6
8
10
12
14
16
VGS = -10V
VGS = -4.5V
-ID, DRAIN CURRENT (A)
TA, AMBIENT TEMPERATURE (oC)
Maximum Continuous Drain Current vs
Ambient Temperature
Figure 12. Forward Bias Safe Operating Area
0.01 0.1 1 10 100
0.01
0.1
1
10
100
100 us
1 s
10 s
DC
100 ms
10 ms
1 ms
I
D
, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θ
JA
= 125
o
C/W
T
A
= 25
o
C
200
Typical Characteristics TJ = 25°C unless otherwise noted
FDS6679AZ P-Channel PowerTrench® MOSFET
www.onsemi.com
5
Figure 13.
10
-4
10
-3
10
-2
10
-1
11010
2
10
3
0.5
1
10
10
2
10
3
10
4
SINGLE PULSE
R
θ
JA
= 125
o
C/W
T
A
= 25
o
C
V
GS
= -10 V
P
(
PK
),
PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
Single Pulse Maximum Power Dissipation
Figure 14.
10
-4
10
-3
10
-2
10
-1
11010
2
10
3
10
-4
10
-3
10
-2
10
-1
1
SINGLE PULSE
R
θ
JA
= 125
o
C/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE,
Zθ
JA
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
2
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
Junction-to-Ambient Transient Thermal Response Curve
Typical Characteristics TJ = 25°C unless otherwise noted
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
❖
