DSA70C200HB
preliminary
1 2 3
Low Loss and Soft Recovery
High Performance Schottky Diode
Common Cathode
Schottky Diode
Part number
DSA70C200HB
Backside: cathode
FAV
F
V V0.79
RRM
35
200
=
V=V
I=A
2x
Features / Advantages: Applications: Package:
● Very low Vf
● Extremely low switching losses
● Low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
TO-247
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
Disclaimer Notice
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions. 20210309cData according to IEC 60747and per semiconductor unless otherwise specified
© 2021 IXYS all rights reserved
DSA70C200HB
preliminary
V = V
Symbol
Definition
Ratings
typ.
max.
I
R
IA
V
F
0.93
R0.7 K/W
R
min.
35
V
RSM
640T = 25°C
VJ
T = °C
VJ
mA7V = V
R
T = 25°C
VJ
I = A
F
T = °C
C
150
P
tot
215 WT = 25°C
C
RK/W
35
200
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions
Unit
1.07
T = 25°C
VJ
125
V
F0
0.55T = °C
VJ
175
r
F
4.8
mΩ
0.79T = °C
VJ
I = A
F
35
0.95
I = A
F
70
I = A
F
70
threshold voltage
slope resistance for power loss calculation only
µA
125
V
RRM
200
max. repetitive reverse blocking voltage
T = 25°C
VJ
C
J
261
junction capacitance
V = V24 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current
V = 0 V
R
T = °C
VJ
175
550 A
200
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Schottky
200
0.25
IXYS reserves the right to change limits, conditions and dimensions. 20210309cData according to IEC 60747and per semiconductor unless otherwise specified
© 2021 IXYS all rights reserved
DSA70C200HB
preliminary
Ratings
Pr
odu
c
t
M
a
rk
in
g
Date Code
Part Number
Logo
IXYS
1234
Lot#
yywwZ
Location
XXXXXXXXX
D
S
A
70
C
200
HB
Part description
Diode
Schottky Diode
low VF
Common Cathode
TO-247AD (3)
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm1.2
mounting torque
0.8
T
VJ
°C175
virtual junction temperature
-55
Weight g6
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
Unit
F
C
N120
mounting force with clip
20
I
RMS
RMS current
70 A
per terminal
150-55
TO-247
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
1)
DSA70C200HB 509195Tube 30DSA70C200HBStandard
T
stg
°C150
storage temperature
-55
threshold voltage
V0.55
mΩ
V
0 max
R
0 max
slope resistance *
2.2
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Schottky
°C
* on die level
175
IXYS reserves the right to change limits, conditions and dimensions. 20210309cData according to IEC 60747and per semiconductor unless otherwise specified
© 2021 IXYS all rights reserved
DSA70C200HB
preliminary
S
ØPØ P1 D2
D1
E1
4
1 2 3
L
L1
2x b2
3x b
b4
2x e
2x E2
D
E
Q
A
A2
A1
C
Sym. Inches Millimeter
min. max. min. max.
A 0.185 0.209 4.70 5.30
A1 0.087 0.102 2.21 2.59
A2 0.059 0.098 1.50 2.49
D 0.819 0.845 20.79 21.45
E 0.610 0.640 15.48 16.24
E2 0.170 0.216 4.31 5.48
e 0.215 BSC 5.46 BSC
L 0.780 0.800 19.80 20.30
L1 - 0.177 - 4.49
Ø P 0.140 0.144 3.55 3.65
Q 0.212 0.244 5.38 6.19
S 0.242 BSC 6.14 BSC
b 0.039 0.055 0.99 1.40
b2 0.065 0.094 1.65 2.39
b4 0.102 0.135 2.59 3.43
c 0.015 0.035 0.38 0.89
D1 0.515 - 13.07 -
D2 0.020 0.053 0.51 1.35
E1 0.530 - 13.45 -
Ø P1 - 0.29 - 7.39
1 2 3
Outlines TO-247
IXYS reserves the right to change limits, conditions and dimensions. 20210309cData according to IEC 60747and per semiconductor unless otherwise specified
© 2021 IXYS all rights reserved
DSA70C200HB
preliminary
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0
10
20
30
40
50
60
7
0
0 10 20 30 40 50 60 70
0
10
20
30
40
50
60
1 10 100 1000 10000
0.0
0.2
0.4
0.6
0.8
0 40 80 120 160 200
0
10
20
30
40
50
60
70
80
I
F(AV)
[A]
T
C
[°C]
t[ms]
0 50 100 150 200
0
100
200
300
400
500
600
700
C
T
[pF]
I
F
[A]
V
F
[V] V
R
[V]
Z
thJC
[K/W]
DC
d = 0.5
I
F(AV)
[A]
P
(AV)
[W]
T
VJ
=
150°C
125°C
25°C
T
VJ
= 25°C
Fig. 1 Maximum forward voltage
drop characteristics
Fig. 3 Typ. junction capacitance
C
T
vs. reverse voltage V
R
Fig. 4 Avg: forward current I
F(AV)
vs. case temperature T
C
Fig. 5 Forward power loss
characteristics
Fig. 6 Transient thermal impedance junction to case
d =
DC
0.5
0.33
0.25
0.17
0.08
Schottky
IXYS reserves the right to change limits, conditions and dimensions. 20210309cData according to IEC 60747and per semiconductor unless otherwise specified
© 2021 IXYS all rights reserved