DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR92AT NPN 5 GHz wideband transistor Product specification Supersedes data of 1999 Nov 02 2000 Mar 28 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AT FEATURES DESCRIPTION * High power gain Silicon NPN transistor encapsulated in a plastic SOT416 (SC-75) package. The BFR92AT uses the same crystal as the SOT23 version: BFR92A. * Gold metallization ensures excellent reliability * SOT416 (SC-75) package. 3 fpage 1 PINNING APPLICATIONS RF amplifiers, mixers and oscillators with signal frequencies up to 1 GHz. 2 Top view PIN MBK090 DESCRIPTION Marking code: P2. 1 base 2 emitter 3 collector Fig.1 SOT416. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter - - 20 V VCEO collector-emitter voltage open base - - 15 V IC collector current (DC) - - 25 mA Ptot total power dissipation up to Ts = 75 C; note 1 - - 150 mW hFE current gain IC = 15 mA; VCE = 10 V 40 90 - Cre feedback capacitance IC = 0; VCE = 10 V; f = 1 MHz; Tamb = 25 C - 0.35 - pF fT transition frequency IC = 15 mA; VCE = 10 V; f = 500 MHz 3.5 5 - GHz GUM maximum unilateral power gain IC = 15 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 C - 14 - dB IC = 15 mA; VCE = 10 V; f = 2 GHz; Tamb = 25 C - 8 - dB IC = 5 mA; VCE = 10 V; f = 1 GHz; s = opt - 2 - dB - - 150 C F noise figure Tj junction temperature Note 1. Ts is the temperature at the soldering point of the collector pin. 2000 Mar 28 2 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AT LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 20 V VCEO collector-emitter voltage open base - 15 V VEBO emitter-base voltage open collector - 2 V IC collector current (DC) - 25 mA Ptot total power dissipation - 150 mW Tstg storage temperature -65 +150 C Tj junction temperature - 150 C up to Ts = 75 C; see Fig.2; note 1 Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL PARAMETER thermal resistance from junction to soldering point Rth j-s MGU068 200 Ptot (mW) 150 100 50 0 0 50 100 150 200 Ts (C) Fig.2 Power derating curve. 2000 Mar 28 3 VALUE UNIT 500 K/W Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AT CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. ICBO collector leakage current IE = 0; VCB = 10 V - - 50 hFE DC current gain IC = 15 mA; VCE = 10 V 40 90 - Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz - 0.6 - UNIT nA pF Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz - 0.9 - pF Cre feedback capacitance IC = 0; VCE = 10 V; f = 1 MHz - 0.35 - pF fT transition frequency IC = 15 mA; VCE = 10 V; f = 500 MHz 3.5 5 - GHz GUM maximum unilateral power gain; note 1 IC = 15 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 C - 14 - dB IC = 15 mA; VCE = 10 V; f = 2 GHz; Tamb = 25 C - 8 - dB IC = 5 mA; VCE = 10 V; f = 1 GHz; s = opt - 2 - dB IC = 5 mA; VCE = 10 V; f = 2 GHz; s = opt - 3 - dB F noise figure Note s 21 2 dB 1. GUM is the maximum unilateral power gain, assuming s12 is zero and G UM = 10 log -------------------------------------------------------( 1 - s 11 2 ) ( 1 - s 22 2 ) 2000 Mar 28 4 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AT MCD074 120 MGC883 1.0 handbook, halfpage C re (pF) h FE 0.8 80 0.6 0.4 40 0.2 0 0 0 10 20 0 30 I C (mA) 4 VCE = 10 V. IC = 0; f = 1 MHz. Fig.3 Fig.4 DC current gain as a function of collector current; typical values. MGC884 6 handbook, halfpage f T (GHz) 4 2 0 1 10 I C (mA) 10 2 VCE = 5 V; f = 500 MHz; Tamb = 25 C. Fig.5 Transition frequency as a function of collector current; typical values. 2000 Mar 28 5 8 12 16 20 VCB (V) Feedback capacitance as a function of collector-base voltage; typical values. Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AT MGC885 30 MGC886 30 handbook, halfpage handbook, halfpage gain gain (dB) (dB) MSG 20 20 G UM MSG GUM 10 10 0 0 5 10 15 0 20 0 5 10 15 I C (mA) VCE = 10 V; f = 500 MHz. VCE = 10 V; f = 1 GHz. Fig.6 Fig.7 Gain as a function of collector current; typical values. MGC887 50 Gain as a function of collector current; typical values. MGC888 50 handbook, halfpage handbook, halfpage gain (dB) 20 I C (mA) gain GUM (dB) GUM 40 40 MSG MSG 30 30 20 20 10 10 Gmax Gmax 0 0 10 102 103 f (MHz) 104 10 VCE = 10 V; IC = 5 mA. VCE = 10 V; IC = 15 mA. Fig.8 Fig.9 Gain as a function of frequency; typical values. 2000 Mar 28 6 102 103 f (MHz) Gain as a function of frequency; typical values. 104 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AT MGC889 6 MGC890 6 handbook, halfpage handbook, halfpage F (dB) F (dB) f = 2 GHz 4 4 IC = 15 mA 1 GHz 10 mA 500 MHz 5 mA 2 2 0 1 10 I C (mA) 0 102 10 2 103 f (MHz) 104 VCE = 10 V. VCE = 10 V. Fig.10 Minimum noise figure as a function of collector current; typical values. Fig.11 Minimum noise figure as a function of frequency; typical values. 90 o 1.0 handbook, full pagewidth 1 F = 4 dB 135 o 0.5 F = 3 dB 2 45 o 0.8 0.6 F = 2 dB 0.2 180 o 0.2 0 0.4 5 0.5 1 0.2 F min = 1.6 dB opt 2 5 0o 0 5 0.2 0.5 2 135 o 45 o 1 MGC891 90 o f = 500 MHz; VCE = 10 V; IC = 5 mA; Zo = 50 . Fig.12 Common emitter noise figure circles; typical values. 2000 Mar 28 7 1.0 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AT 90 o 1.0 handbook, full pagewidth 1 135 o 45 o 2 0.5 0.8 0.6 (4) (2) (3) 0.2 (5) 180 o (1) (6) 0.2 0 0.4 5 0.5 1 0.2 2 5 0o 0 (7) (1) (2) (3) (4) (5) (8) 0.2 opt; Fmin = 2.1 dB. F = 2.5 dB. F = 3 dB. F = 4 dB. ms; Gmax = 15.7 dB. 5 0.5 2 135 o (6) G = 15 dB. (7) G = 14 dB. (8) G = 13 dB. f = 1 GHz; VCE = 10 V; IC = 5 mA; Zo = 50 . 45 o 1 MGC892 1.0 90 o Fig.13 Common emitter noise figure circles; typical values. 90 o 1.0 handbook, full pagewidth 1 135 o 45 o 2 0.5 0.8 (4) 0.6 (3) (2) 0.2 0.4 5 0.2 (1) 180 o 0.2 0 0.5 1 2 5 0o (5) opt; Fmin = 3 dB. F = 3.5 dB. F = 4 dB. F = 5 dB. ms; Gmax = 9.1 dB. (6) G = 8 dB. (7) G = 7 dB. (8) G = 6 dB. f = 2 GHz; VCE = 10 V; IC = 5 mA; Zo = 50 . (1) (2) (3) (4) (5) 0.2 5 (6) (7) (8) 0.5 2 135 o 45 o 1 MGC893 90 o Fig.14 Common emitter noise figure circles; typical values. 2000 Mar 28 0 8 1.0 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AT 90 o 1.0 handbook, full pagewidth 1 135 o 45 o 2 0.5 0.8 0.6 0.2 0.4 5 3 GHz 180 o 0.2 0 0.5 0.2 1 2 5 0o 0 40 MHz 5 0.2 0.5 2 135 o 45 o 1 MGC894 1.0 90 o VCE = 10 V; IC = 15 mA; Zo = 50 . Fig.15 Common emitter input reflection coefficient (s11); typical values. 90 o handbook, full pagewidth 135 o 45 o 40 MHz 180 o 50 40 30 20 3 GHz 0o 10 135 o 45 o 90 o MGC895 VCE = 10 V; IC = 15 mA. Fig.16 Common emitter forward transmission coefficient (s21); typical values. 2000 Mar 28 9 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AT 90 o handbook, full pagewidth 3 GHz 135 o 45 o 40 MHz 180 o 0.25 0.20 0.15 0.10 0o 0.05 135 o 45 o 90 o MGC896 VCE = 10 V; IC = 15 mA. Fig.17 Common emitter reverse transmission coefficient (s12); typical values. 90 o 1.0 handbook, full pagewidth 1 135 o 45 o 2 0.5 0.8 0.6 0.2 0.4 5 0.2 180 o 0.2 0 0.5 1 2 5 0o 0 40 MHz 3 GHz 0.2 0.5 5 2 135 o 45 o 1 MGC897 1.0 90 o VCE = 10 V; IC = 15 mA; Zo = 50 . Fig.18 Common emitter output reflection coefficient (s22); typical values. 2000 Mar 28 10 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AT PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT416 D E B A X HE v M A 3 Q A 1 A1 2 e1 c bp w M B Lp e detail X 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 0.95 0.60 0.1 0.30 0.15 0.25 0.10 1.8 1.4 0.9 0.7 1 0.5 1.75 1.45 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT416 2000 Mar 28 REFERENCES IEC JEDEC EIAJ SC-75 11 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AT DATA SHEET STATUS DATA SHEET STATUS PRODUCT STATUS DEFINITIONS (1) Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2000 Mar 28 12 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AT NOTES 2000 Mar 28 13 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AT NOTES 2000 Mar 28 14 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AT NOTES 2000 Mar 28 15 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V, Tel. +45 33 29 3333, Fax. +45 33 29 3905 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615 800, Fax. +358 9 6158 0920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 4099 6161, Fax. +33 1 4099 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 2353 60, Fax. +49 40 2353 6300 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI), Tel. +39 039 203 6838, Fax +39 039 203 6800 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW, Tel. +48 22 5710 000, Fax. +48 22 5710 001 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SAO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye, ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 3341 299, Fax.+381 11 3342 553 For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Internet: http://www.semiconductors.philips.com SCA 69 (c) Philips Electronics N.V. 2000 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 603508/02/pp16 Date of release: 2000 Mar 28 Document order number: 9397 750 06717