US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES * Low profile package * Ideal for automated placement * Glass passivated chip junction * Ultrafast reverse recovery time * Low switching losses, high efficiency * High forward surge capability * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C DO-214AC (SMA) * Solder dip 260 C, 40 s * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 50 V to 1000 V IFSM 30 A trr 50 ns, 75 ns VF 1.0 V, 1.7 V TJ max. 150 C MECHANICAL DATA Case: DO-214AC (SMA) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Device marking code US1A US1B US1D US1G US1J US1K US1M UNIT UA UB UD UG UJ UK UM Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 Maximum average forward rectified current at TL = 110 C IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A TJ, TSTG - 55 to + 150 C Operating and storage temperature range Document Number: 88768 Revision: 27-Aug-07 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com V www.vishay.com 1 US1A thru US1M Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage (1) 1.0 A SYMBOL US1A US1B VF US1D US1G US1J 1.0 US1K US1M 1.7 UNIT V Maximum DC reverse current at rated DC blocking voltage TA = 25 C TA = 100 C IR Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 50 75 ns Typical junction capacitance 4.0 V, 1 MHz CJ 15 10 pF 10 50 A Note: (1) Pulse test: 300 s pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL US1A US1B US1D RJA RJL Maximum thermal resistance (1) US1G US1J US1K US1M 75 27 UNIT C/W Note: (1) P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pad area ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE US1J-E3/61T 0.064 61T 1800 7" diameter plastic tape and reel US1J-E3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel US1JHE3/61T (1) 0.064 61T 1800 7" diameter plastic tape and reel US1JHE3/5AT (1) 0.064 5AT 7500 13" diameter plastic tape and reel Note: (1) Automotive grade AEC Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 30 Resistive or Inductive Load Peak Forward Surge Current (A) Average Forward Rectified Current (A) 1.2 1.0 0.8 0.6 0.4 0.2 x 0.2" (5.0 x 5.0 mm) Copper Pad Areas 0.2 0 TL = 110 C 8.3 ms Single Half Sine-Wave 25 20 15 10 5 0 0 25 50 75 100 125 150 1 10 100 Lead Temperature (C) Number of Cycles at 60 Hz Figure 1. Forward Current Derating Curve Figure 2. Maximum Non-Repetitive Peak Forward Surge Current www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88768 Revision: 27-Aug-07 US1A thru US1M Vishay General Semiconductor 1000 Instantaneous Reverse Leakage Current (A) Instantaneous Forward Current (A) 100 TJ = 150 C 10 TJ = 125 C 1 TJ = 100 C 0.1 TJ = 25 C 0.01 0.3 US1A - US1G TJ = 150 C 100 10 US1J - US1M 0.1 TJ = 25 C 0.01 0.5 0.7 0.9 1.1 1.3 1.5 1.7 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Figure 3. Typical Instantaneous Forward Characteristics Figure 6. Typical Reverse Leakage Characteristics 100 100 TJ = 150 C Junction Capacitance (pF) Instantaneous Reverse Leakage Current (A) TJ = 100 C 1 Instantaneous Forward Voltage (V) TJ = 125 C 10 TJ = 100 C 1 0.1 US1A - US1G US1A - US1G TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p US1J - US1M 10 TJ = 25 C 1 0.1 0.01 0 20 40 60 80 100 1 10 100 Percent of Rated Peak Reverse Voltage (%) Reverse Voltage (V) Figure 4. Typical Reverse Leakage Characteristics Figure 7. Typical Junction Capacitance 100 Transient Thermal Impedance (C/W) 100 Instantaneous Forward Current (A) TJ = 125 C TJ = 150 C 10 TJ = 125 C 1 TJ = 100 C 0.1 TJ = 25 C US1J - US1M 0.01 0.2 0.7 1.2 1.7 2.2 2.7 3.2 10 1 0.1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Figure 5. Typical Instantaneous Forward Characteristics Figure 8. Typical Transient Thermal Impedance Document Number: 88768 Revision: 27-Aug-07 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 US1A thru US1M Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) www.vishay.com 4 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88768 Revision: 27-Aug-07 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000