US1A thru US1M
Vishay General Semiconductor
Document Number: 88768
Revision: 27-Aug-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Surface Mount Ultrafast Rectifier
FEATURES
Low profile package
Ideal for automated placement
Glass passivated chip junction
Ultrafast reverse recovery time
Low switching losses, high efficiency
High forward surge capability
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectification and
freewheeling application in switching mode converters
and inverters for consumer, computer, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
IF(AV) 1.0 A
VRRM 50 V to 1000 V
IFSM 30 A
trr 50 ns, 75 ns
VF1.0 V, 1.7 V
TJ max. 150 °C
DO-214AC (SMA)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL US1A US1B US1D US1G US1J US1K US1M UNIT
Device marking code UA UB UD UG UJ UK UM
Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V
Maximum average forward rectified current at TL = 110 °C IF(AV) 1.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load IFSM 30 A
Operating and storage temperature range TJ, TSTG - 55 to + 150 °C
US1A thru US1M
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88768
Revision: 27-Aug-07
2
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
Note:
(1) P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pad area
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL US1A US1B US1D US1G US1J US1K US1M UNIT
Maximum instantaneous
forward voltage (1) 1.0 A VF 1.0 1.7 V
Maximum DC reverse current at
rated DC blocking voltage
TA = 25 °C
TA = 100 °C IR
10
50 µA
Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A trr 50 75 ns
Typical junction capacitance 4.0 V, 1 MHz CJ 15 10 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL US1A US1B US1D US1G US1J US1K US1M UNIT
Maximum thermal resistance (1) RθJA
RθJL
75
27 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
US1J-E3/61T 0.064 61T 1800 7" diameter plastic tape and reel
US1J-E3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel
US1JHE3/61T (1) 0.064 61T 1800 7" diameter plastic tape and reel
US1JHE3/5AT (1) 0.064 5AT 7500 13" diameter plastic tape and reel
Figure 1. Forward Current Derating Curve
0
0.4
1.2
07525 50 100 125 150
0.8
0.2
0.6
1.0
Resistive or Inductive Load
Lead Temperature (°C)
Average Forward Rectified Current (A)
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
0
15
20
25
10
5
30
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
1 10 100
T
L
= 110 °C
8.3 ms Single Half Sine-Wave
US1A thru US1M
Vishay General Semiconductor
Document Number: 88768
Revision: 27-Aug-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Leakage Characteristics
Figure 5. Typical Instantaneous Forward Characteristics
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C US1A - US1G
100
10
1
0.1
0.01
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
Percent of Rated Peak Reverse Voltage (%)
020406080 100
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
US1A - US1G
100
10
1
0.1
0.01
Instantaneous Reverse Leakage
Current (µA)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
US1J - US1M
0.2 0.7 1.2 1.7 2.2 2.7 3.2
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
100
10
1
0.1
0.01
Figure 6. Typical Reverse Leakage Characteristics
Figure 7. Typical Junction Capacitance
Figure 8. Typical Transient Thermal Impedance
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 25 °C
US1J - US1M
Percent of Rated Peak Reverse Voltage (%)
1000
100
10
1
0.1
0.01
020406080 100
Instantaneous Reverse Leakage
Current (µA)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Reverse Voltage (V)
0.1 1 10 100
100
10
1
US1A - US1G
US1J - US1M
Junction Capacitance (pF)
0.01 0.1 1 10 100
100
10
1
0.1
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
US1A thru US1M
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88768
Revision: 27-Aug-07
4
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.030 (0.76)
0.060 (1.52)
0.008 (0.203)
0.194 (4.93)
0.208 (5.28)
0.157 (3.99)
0.177 (4.50)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.006 (0.152)
0.012 (0.305)
0.049 (1.25)
0.065 (1.65)
Cathode Band
0 (0)
DO-214AC (SMA)
Mounting Pad Layout
0.074 (1.88)
MAX.
0.208
(5.28) REF.
0.066 (1.68)
MIN.
0.060 (1.52)
MIN.
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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