PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 Plastic Medium-Power Complementary Silicon Transistors Plastic medium-power complementary silicon transistors are designed for general-purpose amplifier and low-speed switching applications. Features * High DC Current Gain - hFE = 2500 (Typ) @ IC = 4.0 Adc * Collector-Emitter Sustaining Voltage - @ 100 mAdc - * * * * * VCEO(sus) = 60 Vdc (Min) - 2N6040, 2N6043 = 100 Vdc (Min) - 2N6042, 2N6045 Low Collector-Emitter Saturation Voltage - VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc - 2N6043,44 = 2.0 Vdc (Max) @ IC = 3.0 Adc - 2N6042, 2N6045 Monolithic Construction with Built-In Base-Emitter Shunt Resistors Epoxy Meets UL 94 V-0 @ 0.125 in ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V Pb-Free Packages are Available* IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIII IIIIIIIIIIII III IIIII II IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIII IIIIIII II IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII III IIIII II IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII http://onsemi.com DARLINGTON, 8 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS, 75 WATTS TO-220AB CASE 221A-09 STYLE 1 MAXIMUM RATINGS (Note 1) Rating Collector-Emitter Voltage Collector-Base Voltage Symbol Value Unit 2N6040 2N6043 2N6042 2N6045 VCEO 60 Vdc 2N6040 2N6043 2N6042 2N6045 VCB Emitter-Base Voltage 100 60 Vdc 100 VEB 5.0 Vdc IC 8.0 16 Adc Base Current IB 120 mAdc Total Power Dissipation @ TC = 25C Derate above 25C PD 75 0.60 W W/C TJ, Tstg -65 to +150 C Collector Current Continuous Peak Operating and Storage Junction Temperature Range MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC Registered Data. 2N604xG AYWW 2N604x = Device Code x = 0, 2, 3, or 5 A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2011 October, 2011 - Rev. 9 1 Publication Order Number: 2N6040/D PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII III III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII III III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII III III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII III III IIIIIIIIIIIIIIIIIIIIIII IIII IIII III III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII III III IIIIIIIIIIIIIIIIIIIIIII IIII IIII III III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction-to-Case Characteristic qJC 1.67 C/W Thermal Resistance, Junction-to-Ambient qJA 57 C/W *ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 60 100 - - - 20 20 - - - - - 20 20 200 200 200 - - 20 20 - 2.0 1000 1000 100 20.000 20,000 - - - - 2.0 2.0 4.0 Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) 2N6040, 2N6043 2N6042, 2N6045 Collector Cutoff Current (VCE = 60 Vdc, IB = 0) (VCE = 100 Vdc, IB = 0) 2N6040, 2N6043 2N6042, 2N6045 Collector Cutoff Current (VCE = 60 Vdc, VBE(off) = 1.5 Vdc) (VCE = 100 Vdc, VBE(off) = 1.5 Vdc) (VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 150C) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150C) (VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150C) 2N6040, 2N6043 2N6042, 2N6045 2N6040, 2N6043 2N6041, 2N6044 2N6042, 2N6045 Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0) 2N6040, 2N6043 2N6042, 2N6045 Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) VCEO(sus) ICEO ICEX ICBO IEBO Vdc - mA mA mA mAdc ON CHARACTERISTICS DC Current Gain (IC = 4.0 Adc, VCE = 4.0 Vdc) (IC = 3.0 Adc, VCE = 4.0 Vdc) (IC = 8.0 Adc, VCE = 4.0 Vdc) 2N6040, 2N6043, 2N6042, 2N6045 All Types Collector-Emitter Saturation Voltage (IC = 4.0 Adc, IB = 16 mAdc) (IC = 3.0 Adc, IB = 12 mAdc) (IC = 8.0 Adc, IB = 80 Adc) 2N6040, 2N6043, 2N6042, 2N6045 All Types hFE VCE(sat) - Vdc Base-Emitter Saturation Voltage (IC = 8.0 Adc, IB = 80 mAdc) VBE(sat) - 4.5 Vdc Base-Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc) VBE(on) - 2.8 Vdc |hfe| 4.0 - Cob - - 300 200 pF hfe 300 - - DYNAMIC CHARACTERISTICS Small Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N6040/2N6042 2N6043/2N6045 Small-Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz) *Indicates JEDEC Registered Data. http://onsemi.com 2 PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 PD, POWER DISSIPATION (WATTS) TA TC 4.0 80 3.0 60 TC 2.0 40 TA 1.0 20 0 0 0 20 40 60 80 100 T, TEMPERATURE (C) 120 140 160 Figure 1. Power Derating 5.0 RC SCOPE TUT V2 approx +8.0 V RB 51 0 V1 approx -12 V D1 8.0 k 120 +4.0 V 25 ms for td and tr, D1 is disconnected and V2 = 0 For NPN test circuit reverse all polarities and D1. tr, tf 10 ns DUTY CYCLE = 1.0% ts 2.0 t, TIME (s) RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA 3.0 VCC -30 V 0.7 0.5 0.3 0.2 VCC = 30 V IC/IB = 250 IB1 = IB2 0.1 TJ = 25C PNP 0.07 td @ VBE(off) = 0 V NPN 0.05 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 2. Switching Times Equivalent Circuit 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.02 0.05 0.02 SINGLE PULSE 0.01 0.01 0.02 0.03 0.01 0.05 5.0 7.0 10 P(pk) qJC(t) = r(t) qJC qJC = 1.67C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) qJC(t) DUTY CYCLE, D = t1/t2 0.1 0.03 tr Figure 3. Switching Times 0.2 0.1 0.07 0.05 tf 1.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) Figure 4. Thermal Response http://onsemi.com 3 20 30 50 100 200 300 500 1000 PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 20 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 ms IC, COLLECTOR CURRENT (AMP) 10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 500 ms 1.0ms dc 5.0ms TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 2N6040, 2N6043 2N6045 0.02 1.0 5.0 7.0 10 20 30 2.0 3.0 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 Figure 5. Active-Region Safe Operating Area 300 TJ = 25C 5000 3000 2000 200 C, CAPACITANCE (pF) hfe, SMALL-SIGNAL CURRENT GAIN 10,000 1000 500 300 200 TC = 25C VCE = 4.0 Vdc IC = 3.0 Adc 100 50 30 20 2.0 5.0 100 Cib 70 50 PNP NPN 10 1.0 Cob PNP NPN 10 20 50 100 f, FREQUENCY (kHz) 100 30 0.1 500 1000 200 20 0.5 1.0 2.0 5.0 10 VR, REVERSE VOLTAGE (VOLTS) 0.2 Figure 7. Capacitance Figure 6. Small-Signal Current Gain PNP 2N6040, 2N6042 NPN 2N6043, 2N6045 20,000 20,000 1000 700 500 300 200 0.1 10,000 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 3000 2000 VCE = 4.0 V VCE = 4.0 V 10,000 7000 5000 50 TJ = 150C 25C -55C 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 7000 5000 TJ = 150C 3000 2000 25C 1000 700 500 -55C 300 200 0.1 10 Figure 8. DC Current Gain http://onsemi.com 4 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 3.0 TJ = 25C 2.6 IC = 2.0 A 6.0 A 4.0 A 2.2 1.8 1.4 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 3.0 TJ = 25C 2.6 IC = 2.0 A 6.0 A 4.0 A 2.2 1.8 1.4 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IB, BASE CURRENT (mA) 10 20 30 7.0 10 Figure 9. Collector Saturation Region 3.0 3.0 TJ = 25C TJ = 25C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.5 2.0 1.5 VBE @ VCE = 4.0 V VBE(sat) @ IC/IB = 250 1.0 2.0 VBE(sat) @ IC/IB = 250 1.5 VBE @ VCE = 4.0 V 1.0 VCE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 0.5 7.010 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 10. "On" Voltages http://onsemi.com 5 5.0 PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 ORDERING INFORMATION Device Package 2N6040 TO-220AB 2N6040G TO-220AB (Pb-Free) 2N6042 TO-220AB 2N6042G TO-220AB (Pb-Free) 2N6043 TO-220AB 2N6043G TO-220AB (Pb-Free) 2N6045 TO-220AB 2N6045G TO-220AB (Pb-Free) http://onsemi.com 6 Shipping 50 Units / Rail PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AG -T- B F SEATING PLANE C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.036 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.91 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 http://onsemi.com 7 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative 2N6040/D