2004 Microchip Technology Inc. DS21419C-page 1
TC4420/TC4429
Features
• Latch-Up Protected: Will Withstand >1.5A
Reverse Output Current
• Logic Input Will Withstand Negative Swing Up To
5V
• ESD Protected: 4 kV
• Matched Rise and Fall Times:
- 25 ns (2500 pF load)
• High Peak Output Current: 6A
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Capacitive Load Drive Capability: 10,000 pF
• Short Delay Time: 55 ns (typ.)
• CMOS/TTL Compatible Input
• Low Supply Current With Logic ‘1’ Input:
-450µA (typ.)
• Low Output Impedance: 2.5Ω
• Output Voltage Swing to Within 25 mV of Ground
or VDD
• Space-Saving 8-Pin SOIC and 8-Pin 6x5 DFN
Packages
Applications
• Switch - Mo de Power S upp lie s
• Motor Co ntrols
• Pulse Transformer Driver
• Class D Switching Amplifiers
General Description
The TC4420/TC4429 are 6A (peak), single-output
MOSFET drivers. The TC4429 is an inverting driver
(pin-compatible with the TC429), while the TC4420 is a
non-inverting driver. These drivers are fabricated in
CMOS for lower power and more efficient operation
versus bipolar driver s.
Both devices have TTL/CMOS compatible inputs that
can be dri ven a s high a s VDD + 0.3V or as low as –5V
without u pset or d amage to th e device. T his elimi nates
the need for external level-shifting circuitry and its
associated cost and size. The output swing is rail-to-rail,
ensuring be tter drive vol tage margin , especially du ring
power-up/power-down sequencing. Propagational
delay time is only 55 ns (typ.) and the output rise and fall
times are only 25 ns (typ.) into 2500 pF across the
usable power supply range.
Unlike other drivers, the TC4420/TC4429 are virtually
latch-up proof. They replace three or more discrete
components, saving PCB area, parts and improving
overall system reliability.
Package Types(1)
5-Pin TO-220
VDD
GND
INPUT
GND
OUTPUT
TC4420
TC4429
Tab is
Common
to VDD
8-Pin CERDIP/
1
2
3
4
VDD
5
6
7
8OUTPUT
GND
VDD
INPUT
NC
GND OUTPUT
TC4420
TC4429
TC4420 TC4429
VDD
OUTPUT
GND
OUTPUT
PDIP/SOIC
Note 1: Duplicate pins must both be connected for proper operation.
2: Exposed pad of the DFN package is electrically isolated.
8-Pin DFN (2)
VDD
INPUT
NC
GND
2
3
45
6
7
8
1TC4420
TC4429
VDD
OUTPUT
GND
OUTPUT
TC4420 TC4429
VDD
OUTPUT
GND
OUTPUT
6A High-Speed MOSFET Drivers
TC4420/TC4429
DS21419C-page 2 2004 Microchip Technology Inc.
Functional Block Diagram
Effective
Input
TC4420
Output
Input
GND
VDD
300 mV
4.7V
C = 38 pF
TC4429
500 µA
Non-Inverting
Inverting
2004 Microchip Technology Inc. DS21419C-page 3
TC4420/TC4429
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
Supply Voltage.....................................................+20V
Input Voltage..................................– 5V to VDD + 0.3V
Input Current (VIN > VDD)...................................50 mA
Power Dissipation (TA ≤ 70°C)
5-Pin TO-220....................................................1.6W
CERDIP.......................................................800 mW
DFN............................................ ...................Note 2
PDIP............................................................730 mW
SOIC............................................................470 mW
Package Power Dissipation (TA ≤ 25°C)
5-Pin TO-220 (With Heatsink) ........................12.5W
Thermal Impedances (To Case)
5-Pin TO-220 RθJ-C ......................................10°C/W
† Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. These
are stress ratings only and funct ional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, TA = +25°C with 4.5V ≤ VDD ≤ 18V.
Parameters Sym Min Typ Max Units Conditions
Input
Logic ‘1’, High Input
Voltage VIH 2.4 1.8 — V
Logic ‘0’, Low Input Voltage VIL —1.30.8V
Input Voltage Range VIN –5 — VDD+0.3 V
Input Current IIN –10 — +10 µA 0V ≤ VIN ≤ VDD
Output
High Output Voltage VOH VDD – 0.025 — — V DC TEST
Low Ou tput Voltag e VOL — — 0.025 V DC TEST
Output Re si stance, Hi gh ROH —2.12.8ΩIOUT = 10 mA, VDD = 18V
Output Re si stance, Low ROL —1.52.5ΩIOUT = 10 mA, VDD = 18V
Peak Output Current IPK —6.0—AV
DD = 18V
Latch-Up Prote ction
Withstand Reverse Current IREV — > 1.5 — A D uty cycle ≤ 2%, t ≤ 300 µsec
Switching T ime (Note 1)
Rise Time tR—2535nsFigure 4-1, CL = 2,500 pF
Fall Time tF—2535nsFigure 4-1, CL = 2,500 pF
Delay Time tD1 —5575nsFigure 4-1
Delay Time tD2 —5575nsFigure 4-1
Power Supply
Power Supply Current IS—
—0.45
55 1.5
150 mA
µA VIN = 3V
VIN = 0V
Operati ng Inpu t Voltage VDD 4.5 — 18 V
Note 1: Switching times ensured by design.
2: Package power dissipation is dependent on the copper pad area on the PCB.
TC4420/TC4429
DS21419C-page 4 2004 Microchip Technology Inc.
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V ≤ VDD ≤ 18V.
Parameters Sym Min Typ Max Units Conditions
Input
Logic ‘1’, High Input
Voltage VIH 2.4 — — V
Logic ‘0’, Low Input Voltage VIL ——0.8V
Input Voltage Range VIN –5 — VDD + 0.3 V
Input Current IIN –10 — +10 µA 0V ≤ VIN ≤ VDD
Output
High Output Voltage VOH VDD – 0.025 — — V DC TEST
Low Ou tput Voltag e VOL — — 0.025 V DC TEST
Output Re si stance, Hi gh ROH —35ΩIOUT = 10 mA, VDD = 18V
Output Re si stance, Low ROL —2.35ΩIOUT = 10 mA, VDD = 18V
Switching T ime (Note 1)
Rise Time tR—3260nsFigure 4-1, CL = 2,500 pF
Fall Time tF—3460nsFigure 4-1, CL = 2,500 pF
Delay Time tD1 —50100nsFigure 4-1
Delay Time tD2 —65100nsFigure 4-1
Power Supply
Power Supply Current IS—
—0.45
60 3
400 mA
µA VIN = 3V
VIN = 0V
Operati ng Inpu t Voltage VDD 4.5 — 18 V
Note 1: Switching times ensured by design.
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V ≤ VDD ≤ 18V.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Specified Temperature Range (C) TA0—+70°C
Specified Temperature Range (I) TA–25 — +85 °C
Specified Temperature Range (E) TA–40 — +85 °C
Specified Temperature Range (V) TA–40 — +125 °C
Maximum Junct ion Temperature TJ— — +150 °C
Storage Temperature Range TA–65 — +150 °C
Package Thermal Resistances
Thermal Resistance, 5L-TO-220 θJA —71—°C/W
Thermal Resistance, 8L-CERDIP θJA —150—°C/W
Thermal Resistance, 8L-6x5 DFN θJA — 33.2 — °C/W Typical four-layer board
with vias to ground plane.
Thermal Resistance, 8L-PDIP θJA —125—°C/W
Thermal Resistance, 8L-SOIC θJA —155—°C/W
2004 Microchip Technology Inc. DS21419C-page 5
TC4420/TC4429
2.0 TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.
FIGURE 2-1: Rise Time vs. Supply
Voltage.
FIGURE 2-2: Rise Time vs. Capacitive
Load.
FIGURE 2-3: Propagation Delay Time vs.
Temperature.
FIGURE 2-4: Fall Time vs. Supply
Voltage.
FIGURE 2-5: Fall Time vs. Capacitive
Load.
FIGURE 2-6: Supply Current vs.
Capacitive Loa d.
Note: The g r ap hs and t ables prov ided fol lowi ng thi s n ote are a st a tis tic al s umm ary based on a l im ite d n um ber of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
579111315
Supply Voltage (V)
C = 2200 pF
L
120
100
80
60
40
20
0
Time (nsec)
C = 4700 pF
L
C = 10,000 pF
L
V = 12V
DD
V = 5V
DD
60
40
20
10
1000 10,000
Capcitive Load (pF)
V = 18V
DD
80
100
Time (nsec)
50
40
30
20
10
0
–60 –20 20 60 100 140
TA (°C)
Delay Time (nsec)
D1
t
D2
t
C = 2200 pF
L
V = 18V
DD
57 9111315
Supply Voltage (V)
C = 2200 pF
L
Time (nsec)
C = 4700 pF
L
C = 10,000 pF
L
100
80
60
40
20
0
60
40
20
10
1000
10,00
0
Capacitive Load (pF)
Time (nsec)
V = 18V
DD
80
100
V = 12V
DD
V = 5V
DD
0 100 1000
10,000
Capacitive Load (pF)
Supply Current (mA)
84
70
56
42
28
14
0
500 kHz
200 kHz
20 kHz
V = 15V
DD
TC4420/TC4429
DS21419C-page 6 2004 Microchip Technology Inc.
Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.
FIGURE 2-7: Rise and Fall Times vs.
Temperature.
FIGURE 2-8: Propagation Delay Time vs.
Supply Voltage.
FIGURE 2-9: Supply Cur re nt vs.
Frequency.
FIGURE 2-10: High-State Output
Resistance vs Supply Voltage.
FIGURE 2-11: Effect of Input Amplitude on
Propagation Delay.
FIGURE 2-12: Low-State Output
Resistance vs. Supply Voltage.
–60 –20 20 60 100 140
TA (°C)
t
RISE
t
50
40
30
20
10
0
Time (nsec)
C = 2200 pF
V = 18V
DD
FALL
L
65
60
55
50
45
40
35
Delay Time (nsec)
4 6 8 1012141618
Supply Voltage (V)
t
D2
t
D1
100
0
0 100 1000 10,000
Frequency (kHz)
Supply Current (mA)
10
1000
18V
10V
5V
C = 2200 pF
L
5
4
3
25913
Supply Voltage (V)
R ( )Ω
OUT
100 mA
50 mA
10 mA
7111
5
200
160
120
80
40
0
Delay Time (nsec)
567 11 13 15
Load = 2200 pF
Input 2.4V
Input 3V
Input 5V
Input 8V and 10V
8 9 10 12 14
V (V)
DD
2.5
2
1.5
1
5913
Supply Voltage (V)
R ( )Ω
OUT
100 mA
50 mA
10 mA
71115
2004 Microchip Technology Inc. DS21419C-page 7
TC4420/TC4429
Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.
FIGURE 2-13: Crossover Energy.
4
3
2
1
0
Crossover Area (A•S) x 10
-8
567 11 13 15
8 9 10 12 14
Supply Voltage (V)
The values on this graph represent the loss seen
by the driver during one complete cycle. For a
single transition, divide the value by 2.
TC4420/TC4429
DS21419C-page 8 2004 Microchip Technology Inc.
3.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1: PIN FUNCTION TABLE
3.1 Supply Input (VDD)
The VDD in put is the bia s supply for the M OSFET driver
and is rated for 4.5V to 18V with respect to the ground
pins. Th e VDD input should be bypassed to ground with
a local ceramic capacitor. The value of the capacitor
shoul d be chos en base d on the capaciti ve load that is
being driv en . A min im um val ue of 1.0 µF is suggested.
3.2 Control Input
The MOSFET driver input is a high-impedance,
TTL/CMOS compatible input. The input circuitry of the
TC4420/TC4429 MOSFET driver also has a “speed-
up” capacitor. This helps to decrease the propagation
delay times of the driver. Because of this, input signals
with sl ow ris in g or falling e dge s s hou ld n ot be us ed, a s
this can result in double-pulsing of the MOSFET driver
output.
3.3 CMOS Push-Pull Output
The MOSFET driver output is a low-impedance,
CMOS, push-pull style output capable of driving a
capacitive load with 6.0A peak currents. The MOSFET
driver output is capable of withstanding 1.5A peak
reverse currents of either polarity.
3.4 Ground
The ground pin s are the return path for the bias current
and the high peak currents that discharge the load
capa citor. The ground pins sh ould be tied into a ground
plane or have very short traces to the bias supply
source retu rn.
3.5 Exposed Metal Pad
The expo sed met al p a d of the 6x5 DF N packa ge i s n ot
internally connected to any potential. Therefore, this
pad can be connected to a ground plane or other
copper plane on a printed circuit board (PCB) to aid in
heat removal from the package.
Pin No.
8-Pin CERDIP/
PDIP/SOIC
Pin No.
8-Pin DFN Pin No .
5-Pin TO-220 Symbol Description
11—V
DD Supply input, 4.5V to 18V
2 2 1 INPUT Control input, TTL/CMOS compatible input
3 3 — NC No Connection
4 4 2 GND Ground
5 5 4 GND Ground
6 6 5 OUTPUT CMOS push-pull output
7 7 — OUTPUT CMOS push-pull output
883V
DD Supply input, 4.5V to 18V
—PAD— NCExposed Metal Pad
——TABV
DD Metal Tab is at the VDD Potential
2004 Microchip Technology Inc. DS21419C-page 9
TC4420/TC4429
4.0 APPLICATIONS INFORMATION
FIGURE 4-1: Switching Time Test Circuits.
Inverting Driver
Non-Inverting Driver
Input
tD1 tF
tR
tD2
Input: 100 kHz,
square wave,
tRISE = tFALL ≤ 10 ns
Output
Input
Output
tD1 tF
tR
tD2
+5V
10%
90%
10%
90%
10%
90%
+18V
0V
90%
10%
10% 10%
90%
+5V
+18V
0V
0V
0V
90%
26
7
54
18
CL = 2,500 pF
0.1 µF
4.7 µF
Input
VDD = 18V
Output
0.1 µF
Note: Pinout shown is for the PDIP, SOIC, DFN and CERDIP packages.
TC4429
TC4420
TC4420/TC4429
DS21419C-page 10 2004 Microchip Technology Inc.
5.0 PACKAGING INFORMATION
5.1 Package Marking Information
Legend: XX...X Customer specific information*
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric traceability code
Note: In the event the full Micro chip p art num ber can not be ma rked on on e line, it will
be carried ov er to the ne xt li ne thus lim iti ng th e nu mb er of av ai lab le c hara ct ers
for customer specific information.
*Standard OTP marking consists of Microchip part number, year code, week code, and traceability code.
5-Lead TO -22 0
XXXXXXXXX
XXXXXXXXX
YYWWNNN
Example:
TC4420CAT
0419256
8-Lead CERDIP (300 mil) Example:
XXXXXXXX
XXXXXNNN
YYWW
TC4420
MJA256
0419
8-Lead DFN Example:
XXXXXXX
XXXXXXX
XXYYWW
NNN
TC4420
EMF
0419
256
2004 Microchip Technology Inc. DS21419C-page 11
TC4420/TC4429
Package Marking Information (Continued)
XXXXXXXX
XXXXXNNN
YYWW
8-Lead PDIP (300 mil) Example:
TC4420
CPA256
0419
8-Lead SOIC (150 mil) Example:
XXXXXXXX
XXXXYYWW
NNN
TC4420
EOA0419
256
TC4420/TC4429
DS21419C-page 12 2004 Microchip Technology Inc.
5-Lead Plastic Transistor Outline (AT) (TO-220)
L H1
Q
E
b
e1
e
C1
J1
F
A
D
a(5X)
ØP
EJECTOR PIN
e3
Drawing No. C04-036
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or
protrusions shall not exceed .010" (0.254mm) per side.
JEDEC equivalent: TO-220
*Controlling Parameter
Mold Draft Angle
Lead Width
Lead Thickness
a
C1
b
.014
Dimension Limits
Overall Height
Lead Length
Overall Width
Lead Pitch
A
L
E
.540
MIN
e
Units
.060
INCHES*
.022 0.36 0.56
MILLIMETERS
.190
.560 13.72
MINMAX
4.83
14.22
MAX
.160 4.06
3° 7° 3° 7°
Overall Length D
1.020.64.040.025
Overall Lead Centers e1 .263
.385
.560
.273 6.68 6.93
.072 1.52 1.83
.415 9.78 10.54
.590 14.22 14.99
Through Hole Diameter P .146 .156 3.71 3.96
J1Base to Bottom of Lead .090 2.29.115 2.92
Through Hole Center Q.103 2.87.113 2.62
Flag Thickness F .045 1.40.055 1.14
Flag Length H1 .234 6.55.258 5.94
Space Between Leads e3 .030 1.02.040 0.76
2004 Microchip Technology Inc. DS21419C-page 13
TC4420/TC4429
8-Lead Ceramic Dual In-line – 300 mil (JA) (CERDIP)
10.169.158.13.400.360.320
eB
Overall Row Spacing
0.510.460.41.020.018.016BLower Lead Width
1.651.401.14.065.055.045
B1
Upper Lead Width
0.380.290.20.015.012.008
c
Lead Thickness
5.084.133.18.200.163.125LTip to Seating Plane
10.169.789.40.400.385.370DOverall Length
7.626.735.84.300.265.230
E1
Ceramic Pkg. Width
8.137.757.37.320.305.290EShoulder to Shoulder Width
1.020.770.51.040.030.020
A1
Standoff §
5.084.574.06.200.180.160ATop to Seating Plane
2.54.100
p
Pitch
88
n
Number of Pins
MAX
NOM
MINMAX
NOM
MINDimension Limits
MILLIMETERSINCHES*Units
JEDEC Equivalent: MS-030
Drawing No. C04-010
*Controlling Parameter
1
2
D
n
E1
c
eB
E
p
L
A2
B
B1
A
A1
TC4420/TC4429
DS21419C-page 14 2004 Microchip Technology Inc.
8-Lead Plastic Dual Flat No Lead Package (MF) 6x5 mm Body (DFN-S) – Saw Singulated
2004 Microchip Technology Inc. DS21419C-page 15
TC4420/TC4429
8-Lead Plastic Dual In-line (PA) – 300 mil (PDIP)
B1
B
A1
A
L
A2
p
α
E
eB
β
c
E1
n
D
1
2
Units INCHES* MILLIMETERS
Dimen sion Li mits MIN NOM MAX MIN NOM MAX
Number of P ins n88
Pitch p.100 2.54
Top to Seating Plane A .140 .155 .170 3.56 3.94 4.32
Molded Package Thickness A2 .115 .130 .145 2.92 3.30 3.68
Base to Seating Plane A1 .015 0.38
Shoulder to Shoulder Width E .300 .313 .325 7.62 7.94 8.26
Molded Package Width E1 .240 .250 .260 6.10 6.35 6.60
Overall Len gth D .360 .373 .385 9.14 9.46 9 .78
Tip to Seating Plane L .125 .130 .135 3.18 3.30 3.43
Lead Thickness c.008 .012 .015 0.20 0.29 0.38
Upper Lead Width B1 .045 .058 .070 1.14 1.46 1.78
Lower Lead Width B .014 .018 .022 0.36 0.46 0.56
Overall Row Spacing § eB .310 .370 .430 7.87 9.40 10.92
Mold Draft Angle Top α5 10 15 5 10 15
Mold Draft Angle Bottom β5 10 15 5 10 15
* Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
JEDEC Equivalent: MS-001
Drawing No. C04-018
.010” (0.254mm) per side.
§ Significant Characteristic
TC4420/TC4429
DS21419C-page 16 2004 Microchip Technology Inc.
8-Lead Plastic Small Outline (OA) – Narrow, 150 mil (SOIC)
Foot A ngle φ048048
1512015120
β
Mold Draft Angle Bottom 1512015120
α
Mold Draft Angle Top 0.510.420.33.020.017.013BLead Width 0.250.230.20.010.009.008
c
Lead Thickness
0.760.620.48.030.025.019LFoot Length 0.510.380.25.020.015.010hChamfer Distance 5.004.904.80.197.193.189DOverall Length 3.993.913.71.157.154.146E1Molded Pa ckag e Width 6.206.025.79.244.237.228EOverall Width 0.250.180.10.010.007.004A1Standoff § 1.551.421.32.061.056.052A2M old ed Packag e Thickness 1.751.551.35.069.061.053AOverall Height 1.27.050
p
Pitch 88
n
Numb er of Pin s MAXNOMMINMAXNOMMINDimension Limits MILLIMETERSINCHES*Units
2
1
D
n
p
B
E
E1
h
L
β
c
45°
φ
A2
α
A
A1
* Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-012
Drawing No. C04-057
§ Significant Characteristic
2004 Microchip Technology Inc. DS21419C-page 17
TC4420/TC4429
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
Sales and Support
Device: TC4420: 6A High-Speed MOSFET Driver, Non-Inverting
TC4429: 6A High-Speed MOSFET Driver, Inverting
Temperature Range: C = 0°C to +70°C (PDIP, SOIC, and TO-220 Only)
I = -25°C to +85°C (CERDIP Only)
E = -40°C to +85°C
V = -40°C to +125°C
Packag e: AT = TO-220, 5-le ad (C-Temp Only)
JA = Ceramic Dual In-line (300 mil Body), 8-lead
(I-Temp Only)
MF = Dual, Flat, No-Lead (6X5 mm Body), 8-lead
MF713 = Dual, Flat, No-Lead (6X5 mm Body), 8-lead
(Tape and Ree l)
PA = Plastic DIP (300 mil Body), 8-lead
OA = Plastic SOIC, (150 mil Body), 8-lead
OA713 = Plastic SOIC, (150 mil Body), 8-lead
(Tape and Ree l)
PB Free G = Lead-Free device*
= Blank
* Available on selected packages. Contact your local sales
representative for availability
PART NO. XXX
PackageTemperature
Range
Device
Examples:
a) TC4420CAT: 6A High-Speed MOSFET
Driver, Non-inverting,
TO-220 package,
0°C to +70°C.
b) TC4420EOA: 6A High-Speed MOSFET
Driver, Non-inverting,
SOIC package,
-40°C to +85°C.
c) TC4420VMF: 6A High-S peed MOSFET
Driver, Non-inverting,
DFN package,
-40°C to +125°C.
a) TC4429CAT: 6A High-Speed MOSFET
Driver, Inverting,
TO-220 package,
0°C to +70°C
b) TC4429EPA: 6A High-Speed MOSFET
Driver, Inverting,
PDIP package,
-40°C to +85°C
c) TC4429VMF: 6A High-S peed MOSFET
Driver, Inverting,
DFN package,
-40°C to +125°C
XXX
Tape and
Reel
X
PB Free
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and
recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1. Your local Microc hip sales office
2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
3. Th e Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Dat a Sheet (include Literature #) you are using.
Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
TC4420/TC4429
DS21419C-page 18 2004 Microchip Technology Inc.
NOTES:
2004 Microchip Technology Inc. DS21419C-page 19
Information contained in this publication regarding device
applications and the like is intended through sug gestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microc hip Technology Incorporated with respect
to the accuracy or use of such inf orm ation, or inf ringement of
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip’s products as critical
components in life support systems is not authorized except
with express written approval by Microchip. No licenses are
conveyed, implicitly or otherwise, under any intellectual
property rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, KEELOQ, microID, MPLAB, PIC, PICmicro,
PICSTART, PRO MATE, Po we rSmart, rfPIC , and
SmartShunt are registered trademarks of Microchip
Technology Incorporated in the U.S.A. and other countries.
AmpLab, FilterLab, MX DE V, MXLAB, PICMASTER, SEEV AL,
SmartSensor and The Embedded Control Solutions Company
are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, dsPICDEM,
dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR,
FanSense, FlexROM, fuzzyLAB, In-Circuit Serial
Programming, ICSP, ICEPIC, Migratable Memory, MPASM,
MPLIB, MPLINK, MPSIM, PICkit, PICDEM, PICDEM.net,
PICLAB, PICtail, PowerCal, PowerInfo, PowerMate,
PowerTool, rfLAB, rfPICDEM, Select Mode, Sm art Serial,
SmartTel and Total Endurance are trademarks of Microchip
Technology Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2004, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Note the following details of the code protection feature on Microchip devices:
• Microchip products meet the specification contained in their particular Microchip Data Sheet.
• Microchip believes that it s f amily of products is one of the most secure families of its kind on t he market today, when used in the
intended manner and under normal conditions.
• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
• Microchip is willing to work with the customer who is concerned about the integrity of their code.
• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is c onstantly evolving. We a t Microchip are committed to continuously improving the c ode prot ecti on features of our
products. Attempts to break Microchip’ s code protection f eature may be a violati on of t he Digit al Millennium Copyright Act. If such act s
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received ISO/TS-16949:2002 quality system certification for
its worldwide headquarters, design and wafer fabrication facilities in
Chandler and Tempe, Arizona and Mountain View, California in
October 2003. The Company’s quality system processes and
procedures are for its PICmicro® 8-bit MCUs, KEELOQ® code hopping
devices, Serial EEPROMs, micro peripherals, nonvolat ile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
DS21419C-page 20 2004 Microchip Technology Inc.
AMERICAS
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WORLDWIDE SALES AND SERVICE
08/24/04
