BFR92A/BFR92AR
TELEFUNKEN Semiconductors
Rev . A3, 31-Oct-97 1 (8)
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Wide band amplifier up to GHz range.
Features
D
High power gain
D
Low noise figure
D
High transition frequency
13 581
23
1
94 9280
BFR92A Marking: + P2
Plastic case (SOT 23)
1= Collector; 2= Base; 3= Emitter
13 581
23
1
9510527
BFR92AR Marking: + P5
Plastic case (SOT 23)
1= Collector; 2= Base; 3= Emitter
Absolute Maximum Ratings
Parameters Symbol Value Unit
Collector -base voltage VCBO 20 V
Collector -emitter voltage VCEO 15 V
Emitter-base voltage VEBO 2 V
Collector current IC30 mA
Total power dissipation Tamb ≤ 60°C Ptot 200 mW
Junction temperature Tj150 °C
Storage temperature range Tstg –65 to +150 °C
Maximum Thermal Resistance
Parameters Symbol Value Unit
Junction ambient on glass fibre printed board
(25 x 20 x 1.5) mm3 plated with 35
m
m Cu RthJA 450 K/W
BFR92A/BFR92AR
TELEFUNKEN Semiconductors
Rev . A3, 31-Oct-97
2 (8)
Electrical DC Characteristics
Tamb = 25
_
C
Parameters / Test Conditions Symbol Min. Typ. Max. Unit
Collector-emitter cut-off current
VCE = 20 V, VBE = 0 ICES 100
m
A
Collector -base cut-off current
VCB = 10 V, IE = 0 ICBO 100 nA
Emitter-base cut-off current
VEB = 2 V, IC = 0 IEBO 10
m
A
Collector -emitter breakdown voltage
IC = 1 mA, IB = 0 V(BR)CEO 15 V
DC forward current transfer ratio
VCE = 10 V, IC = 14 mA hFE 65 100 150
Electrical AC Characteristics
Tamb = 25
_
C
Parameters / Test Conditions Symbol Min. Typ. Max. Unit
T ransition frequency
VCE = 10 V, IC = 14 mA, f = 500 MHz fT5.0 6.0 GHz
Collector -base capacitance
VCB = 10 V, f = 1 MHz Ccb 0.3 pF
Collector -emitter capacitance
VCE = 10 V, f = 1 MHz Cce 0.15 pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz Ceb 0.65 pF
Noise figure
VCE = 10 V, IC = 2 mA, ZS = 50
W
, f = 800 MHz F 1.8 dB
Power gain
VCE = 10 V, ZS = 50
W
, ZL =ZLopt,
IC = 14 mA, f = 800 MHz Gpe 16 dB
Linear output voltage – two tone intermodulation test
VCE = 10 V, IC = 14 mA, dIM = 60 dB,
f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50
W
V1 = V2120 mV
Third order intercept point
VCE = 10 V, IC = 14 mA, f = 800 MHz IP324 dBm
BFR92A/BFR92AR
TELEFUNKEN Semiconductors
Rev . A3, 31-Oct-97 3 (8)
Common Emitter S-Parameters
Zo = 50
W
S11 S21 S12 S22
VCE/V IC/mA f/MHz LIN
MAG ANG LIN
MAG ANG LIN
MAG ANG LIN
MAG ANG
deg deg deg deg
2
100
300
500
800
1000
1200
1500
1800
2000
0.902
0.761
0.577
0.399
0.339
0.303
0.284
0.272
0.278
–17.5
–50.2
–76.8
–105.3
–121.9
–138.1
–163.3
172.9
159.4
6.38
5.51
4.48
3.28
2.79
2.45
2.07
1.79
1.65
164.6
137.8
117.8
98.9
90.0
82.1
71.4
62.5
57.3
0.025
0.064
0.086
0.104
0.114
0.124
0.140
0.157
0.171
79.9
63.1
53.7
49.7
50.3
51.1
53.1
55.5
56.6
0.978
0.859
0.736
0.642
0.618
0.603
0.577
0.560
0.558
–7.6
–19.3
–24.2
–25.3
–26.0
–28.0
–31.2
–33.9
–36.0
5
100
300
500
800
1000
1200
1500
1800
2000
0.783
0.534
0.351
0.220
0.188
0.175
0.189
0.200
0.214
–27.2
–69.6
–97.6
–128.3
–145.2
–162.0
175.1
153.5
140.6
12.84
9.12
6.41
4.28
3.53
3.04
2.51
2.16
1.98
155.8
122.8
104.8
89.8
82.9
76.5
67.8
60.2
55.8
0.023
0.052
0.068
0.091
0.107
0.124
0.149
0.175
0.194
76.3
61.9
59.5
61.1
62.5
62.8
63.0
62.4
61.6
0.934
0.711
0.580
0.518
0.515
0.510
0.494
0.483
0.481
–12.7
–25.1
–25.6
–22.1
–22.2
–24.1
–27.3
–30.0
–32.6
510
100
300
500
800
1000
1200
1500
1800
2000
0.641
0.362
0.229
0.148
0.136
0.133
0.160
0.183
0.198
–38.1
–85.8
–116.7
–151.6
–168.5
176.8
158.3
139.4
130.4
19.40
11.09
7.27
4.69
3.83
3.27
2.70
2.30
2.12
146.3
112.0
97.3
84.9
79.0
73.4
65.7
58.9
54.8
0.020
0.043
0.062
0.089
0.108
0.127
0.156
0.184
0.203
73.2
65.2
66.3
68.1
68.1
67.8
66.5
64.8
63.5
0.869
0.597
0.496
0.465
0.473
0.473
0.461
0.452
0.450
–17.6
–26.0
–22.9
–18.1
–18.4
–20.6
–24.6
–27.4
–30.1
14
100
300
500
800
1000
1200
1500
1800
2000
0.566
0.301
0.195
0.137
0.129
0.132
0.162
0.183
0.204
–44.3
–94.2
–127.0
–164.6
–179.9
167.7
153.1
136.6
127.4
22.20
11.58
7.43
4.78
3.88
3.30
2.72
2.32
2.13
141.5
108.1
94.6
83.2
77.6
72.3
64.9
58.1
54.1
0.019
0.041
0.060
0.089
0.109
0.128
0.157
0.185
0.205
72.7
67.5
69.0
70.1
69.9
69.1
67.5
65.6
64.1
0.832
0.560
0.475
0.456
0.466
0.469
0.456
0.448
0.446
–19.4
–25.1
–20.9
–16.5
–17.1
–19.4
–23.4
–26.3
–29.2
20
100
300
500
800
1000
1200
1500
1800
2000
0.484
0.251
0.181
0.144
0.138
0.145
0.179
0.202
0.220
–52.5
–106.2
–141.8
–177.4
169.3
159.1
148.3
133.7
125.9
24.55
11.67
7.37
4.70
3.82
3.26
2.67
2.28
2.10
136.0
104.3
92.1
81.3
76.0
70.9
63.7
57.0
52.8
0.018
0.039
0.058
0.088
0.108
0.127
0.157
0.185
0.205
72.0
69.5
71.5
72.0
71.4
70.6
68.4
66.4
64.8
0.788
0.531
0.466
0.456
0.469
0.472
0.461
0.453
0.452
–20.7
–22.8
–18.3
–14.4
–15.3
–18.1
–22.4
–25.4
–28.4
BFR92A/BFR92AR
TELEFUNKEN Semiconductors
Rev . A3, 31-Oct-97
4 (8)
Common Emitter S-Parameters
Zo = 50
W
S11 S21 S12 S22
VCE/V IC/mA f/MHz LIN
MAG ANG LIN
MAG ANG LIN
MAG ANG LIN
MAG ANG
deg deg deg deg
2
100
300
500
800
1000
1200
1500
1800
2000
0.915
0.780
0.597
0.405
0.339
0.294
0.261
0.240
0.243
–16.2
–46.7
–71.2
–97.6
–113.1
–129.6
–155.8
179.2
163.2
6.32
5.56
4.57
3.37
2.87
2.53
2.13
1.84
1.70
165.5
139.6
119.9
101.0
92.3
84.2
73.7
64.8
59.8
0.020
0.054
0.073
0.089
0.098
0.107
0.121
0.136
0.149
80.5
65.1
55.8
52.2
53.0
54.3
56.8
59.2
61.1
0.981
0.883
0.778
0.692
0.677
0.663
0.643
0.630
0.630
–6.2
–16.1
–20.4
–21.6
–22.4
–24.0
–27.0
–29.6
–31.4
5
100
300
500
800
1000
1200
1500
1800
2000
0.816
0.569
0.372
0.220
0.175
0.153
0.153
0.157
0.170
–24.3
–62.7
–87.9
–114.2
–129.6
–145.8
–175.7
158.0
143.4
12.50
9.15
6.55
4.41
3.63
3.13
2.59
2.22
2.04
157.4
125.3
106.9
91.6
84.6
78.3
69.7
62.1
57.9
0.019
0.044
0.059
0.079
0.093
0.107
0.129
0.152
0.168
77.2
63.6
60.6
62.3
63.9
64.8
65.5
65.5
65.3
0.947
0.761
0.647
0.592
0.590
0.589
0.576
0.567
0.567
–10.3
–20.5
–21.1
–18.8
–19.1
–20.8
–24.1
–26.6
–28.7
10 10
100
300
500
800
1000
1200
1500
1800
2000
0.696
0.397
0.237
0.132
0.103
0.097
0.116
0.133
0.148
–33.7
–75.7
–101.2
–130.2
–149.3
–165.8
167.2
141.3
129.4
18.83
11.20
7.41
4.81
3.92
3.35
2.76
2.36
2.16
148.4
114.4
99.0
86.4
80.4
75.0
67.5
60.4
56.4
0.017
0.038
0.054
0.078
0.094
0.111
0.136
0.160
0.178
74.6
66.4
67.0
68.9
69.4
69.5
69.0
67.9
66.8
0.896
0.666
0.577
0.553
0.560
0.561
0.551
0.545
0.549
–13.8
–20.8
–18.6
–15.5
–16.0
–18.2
–21.9
–24.4
–27.1
14
100
300
500
800
1000
1200
1500
1800
2000
0.639
0.339
0.199
0.113
0.093
0.090
0.118
0.137
0.155
–38.8
–82.4
–110.0
–144.1
160.9
179.0
158.6
137.7
125.7
21.41
11.61
7.52
4.83
3.93
3.36
2.76
2.35
2.16
143.8
110.2
96.3
84.4
78.9
73.7
66.4
59.5
55.6
0.016
0.036
0.053
0.077
0.094
0.110
0.136
0.161
0.178
73.2
67.5
69.4
70.7
71.1
70.5
69.8
68.4
67.4
0.866
0.636
0.562
0.549
0.556
0.560
0.550
0.546
0.548
–15.2
–19.8
–16.9
–14.2
–14.9
–17.3
–21.0
–24.0
–26.5
20
100
300
500
800
1000
1200
1500
1800
2000
0.576
0.286
0.177
0.113
0.101
0.107
0.136
0.160
0.181
–45.8
–91.7
–123.1
–161.1
–177.3
168.1
152.5
133.1
124.2
23.38
11.55
7.34
4.69
3.81
3.24
2.67
2.27
2.09
138.5
106.1
93.4
82.2
77.1
72.0
64.8
58.1
54.0
0.015
0.034
0.051
0.075
0.092
0.109
0.134
0.159
0.176
72.0
69.0
71.3
72.4
72.4
71.9
70.9
69.5
68.4
0.836
0.620
0.565
0.557
0.568
0.571
0.564
0.559
0.560
–15.8
–17.7
–14.7
–12.6
–13.8
–16.4
–20.4
–23.5
–25.9
BFR92A/BFR92AR
TELEFUNKEN Semiconductors
Rev . A3, 31-Oct-97 5 (8)
Typical Characteristics (Tj = 25
_
C unless otherwise specified)
0
50
100
150
200
250
0 30 60 90 120 150
Tamb – Ambient Temperature ( °C )96 12159
P – Total Power Dissipation ( mW )
tot
Figure 1.. Total Power Dissipation vs. Ambient Temperature
0
1000
2000
3000
4000
5000
6000
0 5 10 15 20 25 30
IC – Collector Current ( mA )12889
f – Transition Frequency ( MHz )
T
VCE=10V
f=500MHz
Figure 2.. Transition Frequency vs. Collector Current
0
0.2
0.4
0.6
0.8
1.0
0 4 8 12 16 20
VCB – Collector Base Voltage ( V )13585
C – Collector Base Capacitance ( pF )
cb
f=1MHz
Figure 3.. Collector Base Capacitance vs.
Collector Base Voltage
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 5 10 15 20 25 30
IC – Collector Current ( mA )12891
F – Noise Figure ( dB )
VCE=10V
f=800MHz
ZS=50
W
Figure 4.. Noise Figure vs. Collector Current
BFR92A/BFR92AR
TELEFUNKEN Semiconductors
Rev . A3, 31-Oct-97
6 (8)
VCE = 10 V; IC = 14 mA; Z0 = 50
W
S11
13 526
–j0.2
–j0.5
–j
–j2
–j5
0
j0.2
j0.5
j
j2
j5
1
ÁÁ
ÁÁ
0.2
ÁÁ
ÁÁ
0.5
ÁÁ
ÁÁ
1
ÁÁ
ÁÁ
2
ÁÁ
ÁÁ
5
2.0 GHz
0.8
0.1
0.3
Figure 5. Input reflection coefficient
S21
13 528
0°
90°
180°
–90°
8 16
–150°
–120°–60°
–30°
120°
150°
60°
30°
2.0 GHz
0.5
1.0
0.1 0.3
Figure 6. Forward transmission coefficient
S12
13 527
0°
90°
180°
–90°
0.08 0.16
–150°
–120°–60°
–30°
120°
150°
60°
30°
2.0 GHz
0.5
1.0
0.1
1.5
Figure 7. Reverse transmission coefficient
S22
13 529
–j0.2
–j0.5
–j
–j2
–j5
0
j0.2
j0.5
j
j2
j5
1
ÁÁ
ÁÁ
0.2
ÁÁ
ÁÁ
0.5
ÁÁ
ÁÁ
1
ÁÁ
ÁÁ
2
ÁÁ
ÁÁ
5
2.0 GHz
0.8 0.1
Figure 8. Output reflection coefficient
BFR92A/BFR92AR
TELEFUNKEN Semiconductors
Rev . A3, 31-Oct-97 7 (8)
Dimensions of BFR92A in mm
95 11346
Dimensions of BFR92AR in mm
95 11347
BFR92A/BFR92AR
TELEFUNKEN Semiconductors
Rev . A3, 31-Oct-97
8 (8)
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
