MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-MOSFET,25V BSC010NE2LSI DataSheet Rev.2.3 Final PowerManagement&Multimarket OptiMOSTMPower-MOSFET,25V BSC010NE2LSI 1Description SuperSO8 8 Features *OptimizedforhighperformanceBuckconverter *MonolithicintegratedSchottkylikediode *Verylowon-resistanceRDS(on)@VGS=4.5V *100%avalanchetested *N-channel *QualifiedaccordingtoJEDEC1)fortargetapplications *Pb-freeleadplating;RoHScompliant *Halogen-freeaccordingtoIEC61249-2-21 Value Unit VDS 25 V RDS(on),max 1.05 m ID 100 A QOSS 38 nC QG(0V..10V) 59 nC Type/OrderingCode Package BSC010NE2LSI PG-TDSON-8 1) 5 6 2 Marking 010NE2LI 3 6 5 4 1 Table1KeyPerformanceParameters Parameter 7 3 2 4 7 8 1 S1 8D S2 7D S3 6D G4 5D RelatedLinks - J-STD20 and JESD22 Final Data Sheet 2 Rev.2.3,2014-03-03 OptiMOSTMPower-MOSFET,25V BSC010NE2LSI TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 3 Rev.2.3,2014-03-03 OptiMOSTMPower-MOSFET,25V BSC010NE2LSI 2Maximumratings atTj=25C,unlessotherwisespecified Table2Maximumratings at 25 C Parameter Symbol Values Unit Note/TestCondition 100 100 100 100 38 A VGS=10V,TC=25C VGS=10V,TC=100C VGS=4.5V,TC=25C VGS=4.5V,TC=100C VGS=10V,TA=25C,RthJA=50K/W1) Min. Typ. Max. - Continuous drain current ID - Pulsed drain current 2) ID,pulse - - 400 A TC=25C Avalanche current, single pulse 3) IAS - - 50 A TC=25C Avalanche energy, single pulse EAS - - 100 mJ ID=50A,RGS=25 Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 96 2.5 W TC=25C TA=25C,RthJA=50K/W1) Operating and storage temperature Tj,Tstg - - - C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition 3Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - - 1.3 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB RthJA - - 50 K/W 6 cm2 cooling area 1) 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Final Data Sheet 4 Rev.2.3,2014-03-03 OptiMOSTMPower-MOSFET,25V BSC010NE2LSI 4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage V(BR)DSS Breakdown voltage temperature coefficient Values Unit Note/TestCondition - V VGS=0V,ID=1mA 15 - mV/K ID=10mA,referencedto25C 1.2 - 2 V VDS=VGS,ID=250A IDSS - 3 0.5 - mA VDS=20V,VGS=0V,Tj=25C VDS=20V,VGS=0V,Tj=125C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 1.1 0.9 1.4 1.05 m VGS=4.5V,ID=30A VGS=10V,ID=30A Gate resistance RG 0.3 0.6 1.2 - Transconductance gfs 80 160 - S |VDS|>2|ID|RDS(on)max,ID=30A Unit Note/TestCondition Min. Typ. Max. 25 - dV(BR)DSS/dTj - Gate threshold voltage VGS(th) Zero gate voltage drain current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 4200 5600 pF VGS=0V,VDS=12V,f=1MHz Output capacitance Coss - 1800 2400 pF VGS=0V,VDS=12V,f=1MHz Reverse transfer capacitance Crss - 180 - pF VGS=0V,VDS=12V,f=1MHz Turn-on delay time td(on) - 6.3 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6 Rise time tr - 6.2 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6 Turn-off delay time td(off) - 32 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6 Fall time tf - 4.6 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6 Final Data Sheet 5 Rev.2.3,2014-03-03 OptiMOSTMPower-MOSFET,25V BSC010NE2LSI Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Values Unit Note/TestCondition 13 nC VDD=12V,ID=30A,VGS=0to4.5V 6.7 - nC VDD=12V,ID=30A,VGS=0to4.5V - 6.9 10 nC VDD=12V,ID=30A,VGS=0to4.5V Qsw - 10 - nC VDD=12V,ID=30A,VGS=0to4.5V Gate charge total Qg - 29 39 nC VDD=12V,ID=30A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.4 - V VDD=12V,ID=30A,VGS=0to4.5V Gate charge total Qg - 59 78 nC VDD=12V,ID=30A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 25 - nC VDS=0.1V,VGS=0to4.5V Output charge Qoss - 38 51 nC VDD=12V,VGS=0V Unit Note/TestCondition Min. Typ. Max. Qgs - 10 Gate charge at threshold Qg(th) - Gate to drain charge Qgd Switching charge Table7Reversediode Parameter Symbol Diode continuous forward current Values Min. Typ. Max. IS - - 96 A TC=25C Diode pulse current IS,pulse - - 400 A TC=25C Diode forward voltage VSD - 0.56 0.7 V VGS=0V,IF=12A,Tj=25C Reverse recovery charge Qrr - 5 - nC VR=15V,IF=12A,diF/dt=400A/s 1) See Gate charge waveforms for parameter definition Final Data Sheet 6 Rev.2.3,2014-03-03 OptiMOSTMPower-MOSFET,25V BSC010NE2LSI 5Electricalcharacteristicsdiagrams Diagram2:Draincurrent 120 120 100 100 80 80 ID[A] Ptot[W] Diagram1:Powerdissipation 60 60 40 40 20 20 0 0 40 80 120 0 160 0 40 80 TC[C] 120 160 TC[C] Ptot=f(TC) ID=f(TC);VGS10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 s 10 s 100 s 102 100 0.5 1 ms 0.2 101 ZthJC[K/W] ID[A] 10 ms DC 0.1 10-1 0.05 0.02 0.01 100 10-1 10-1 single pulse 10-2 100 101 102 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 7 Rev.2.3,2014-03-03 OptiMOSTMPower-MOSFET,25V BSC010NE2LSI Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 800 2.0 5V 4.5 V 10 V 700 3.2 V 4V 600 3.5 V 1.5 4V RDS(on)[m] ID[A] 500 3.5 V 400 300 3.2 V 200 1.0 7V 8V 10 V 0.5 3V 2.8 V 100 0 4.5 V 5V 0 1 2 0.0 3 0 10 20 VDS[V] 30 40 50 ID[A] ID=f(VDS);Tj=25C;parameter:VGS RDS(on)=f(ID);Tj=25C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 400 320 320 240 240 ID[A] gfs[S] 400 160 160 150 C 25 C 80 0 80 0 1 2 3 4 5 0 0 VGS[V] 80 120 160 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 40 gfs=f(ID);Tj=25C 8 Rev.2.3,2014-03-03 OptiMOSTMPower-MOSFET,25V BSC010NE2LSI Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 3.0 2.5 2.5 2.0 10 mA 1.5 VGS(th)[V] RDS(on)[m] 2.0 1.5 1.0 1.0 typ 0.5 0.5 0.0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[C] 60 100 140 180 Tj[C] RDS(on)=f(Tj);ID=30A;VGS=10V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 -55 C 25 C 125 C 150 C Ciss 102 IF[A] C[pF] Coss 103 101 100 Crss 102 0 5 10 15 20 25 10-1 0.0 VDS[V] 0.8 1.2 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.4 IF=f(VSD);parameter:Tj 9 Rev.2.3,2014-03-03 OptiMOSTMPower-MOSFET,25V BSC010NE2LSI Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 102 12 12 V 10 5V 25 C 20 V 8 VGS[V] IAV[A] 100 C 125 C 101 6 4 2 100 100 101 102 103 0 0 10 tAV[s] 20 30 40 50 60 70 Qgate[nC] IAS=f(tAV);RGS=25;parameter:Tj(start) VGS=f(Qgate);ID=30Apulsed;parameter:VDD Diagram15:Typ.drain-sourceleakagecurrent Gate charge waveforms 10-2 125 C 10-3 100 C IDSS[A] 75 C -4 10 10-5 10-6 25 C 0 5 10 15 20 VSD[V] IDSS=f(VDS);VGS=0V;parameter:Tj Final Data Sheet 10 Rev.2.3,2014-03-03 OptiMOSTMPower-MOSFET,25V BSC010NE2LSI 6PackageOutlines Figure1OutlinePG-TDSON-8,dimensionsinmm/inches Final Data Sheet 11 Rev.2.3,2014-03-03 OptiMOSTMPower-MOSFET,25V BSC010NE2LSI Dimension in mm Figure2OutlinePackingInfoTDSON-8,dimensionsinmm/inches Final Data Sheet 12 Rev.2.3,2014-03-03 OptiMOSTMPower-MOSFET,25V BSC010NE2LSI RevisionHistory BSC010NE2LSI Revision:2014-03-03,Rev.2.3 Previous Revision Revision Date Subjects (major changes since last revision) 2.3 2014-03-03 Release of Final Version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munchen,Germany (c)2014InfineonTechnologiesAG AllRightsReserved. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 13 Rev.2.3,2014-03-03 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Infineon: BSC010NE2LSIATMA1