TIP2955G - ON SEMICONDUCTOR

May, 2012 − Rev. 7

1Publication Order Number:

TIP3055/D

TIP3055 (NPN),

TIP2955 (PNP)

Complementary Silicon

Power Transistors

Designed for general−purpose switching and amplifier applications.

Features

•DC Current Gain −

hFE = 20−70 @ IC

= 4.0 Adc

•Collector−Emitter Saturation Voltage −

VCE(sat) = 1.1 Vdc (Max) @ IC

= 4.0 Adc

•Excellent Safe Operating Area

•These are Pb−Free Devices*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector − Emitter Voltage VCEO 60 Vdc

Collector − Emitter Voltage VCER 70 Vdc

Collector − Base Voltage VCB 100 Vdc

Emitter − Base Voltage VEB 7.0 Vdc

Collector Current − Continuous IC1 5 Adc

Base Current IB7.0 Adc

Total Power Dissipation @ TC = 25°C

Derate above 25°C

PD90

0.72

W

W/°C

Operating and Storage Junction

Temperature Range

TJ, Tstg –65 to

+150

°C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 1.39 °C/W

Thermal Resistance, Junction−to−Ambient RqJA 35.7 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

15 AMPERE

POWER TRANSISTORS

COMPLEMENTARY SILICON

60 VOLTS, 90 WATTS

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

SOT−93 (TO−218)

CASE 340D

STYLE 1

TO−247

CASE 340L

STYLE 3

NOTE: Effective June 2012 this device will

be available only in the TO−247

package. Reference FPCN# 16827.

TIP3055 (NPN), TIP2955 (PNP)

http://onsemi.com

2

MARKING DIAGRAMS

AYWWG

TIPxx55

AYWWG

1 BASE

2 COLLECTOR

3 EMITTER

TIPxx55 = Device Code

A = Assembly Location

Y = Year

WW = Work Week

G=Pb−Free Package

TO−247

TO−218

1 BASE

2 COLLECTOR

3 EMITTER

ORDERING INFORMATION

Device Package Shipping

TIP3055G SOT−93 (TO−218)

(Pb−Free)

30 Units / Rail

TIP2955G SOT−93 (TO−218)

(Pb−Free)

30 Units / Rail

TIP3055G TO−247

(Pb−Free)

30 Units / Rail

TIP2955G TO−247

(Pb−Free)

30 Units / Rail

TIP3055 (NPN), TIP2955 (PNP)

http://onsemi.com

3

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 30 mAdc, IB = 0)

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎ

60

ÎÎÎÎ

−

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 70 Vdc, RBE = 100 Ohms)

ÎÎÎÎÎ

ICER

ÎÎÎ

−

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0)

ÎÎÎÎÎ

ICEO

ÎÎÎ

−

ÎÎÎÎ

0.7

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 100 Vdc, VBE(off) = 1.5 Vdc)

ÎÎÎÎÎ

ICEV

ÎÎÎ

−

ÎÎÎÎ

5.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VBE = 7.0 Vdc, IC = 0)

ÎÎÎÎÎ

IEBO

ÎÎÎ

−

ÎÎÎÎ

5.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (Note 1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 4.0 Adc, VCE = 4.0 Vdc)

(IC = 10 Adc, VCE = 4.0 Vdc)

ÎÎÎÎÎ

hFE

ÎÎÎ

20

5.0

ÎÎÎÎ

70

−

ÎÎÎ

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Saturation Voltage

(IC = 4.0 Adc, IB = 400 mAdc)

(IC = 10 Adc, IB = 3.3 Adc)

ÎÎÎÎÎ

VCE(sat)

ÎÎÎ

−

ÎÎÎÎ

1.1

3.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base−Emitter On Voltage

(IC = 4.0 Adc, VCE = 4.0 Vdc)

ÎÎÎÎÎ

VBE(on)

ÎÎÎ

−

ÎÎÎÎ

1.8

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SECOND BREAKDOWN

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Second Breakdown Collector Current with Base Forward Biased

(VCE = 30 Vdc, t = 1.0 s; Nonrepetitive)

ÎÎÎÎÎ

Is/b

ÎÎÎ

3.0

ÎÎÎÎ

−

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current Gain — Bandwidth Product

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)

ÎÎÎÎÎ

fT

ÎÎÎ

2.5

ÎÎÎÎ

−

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small−Signal Current Gain

(VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHz)

ÎÎÎÎÎ

hfe

ÎÎÎ

15

ÎÎÎÎ

−

ÎÎÎ

kHz

NOTE: For additional design curves, refer to electrical characteristics curves of 2N3055.

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.

TIP3055 (NPN), TIP2955 (PNP)

http://onsemi.com

4

TIP3055

TIP2955

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

0.1

100

1000

10

1.0 2.00.3 7.0 10

VCE = 4.0 V

TJ = 25°C

hFE, DC CURRENT GAIN

0.2 0.5 0.7 3.0 5.0

IC, COLLECTOR CURRENT (AMPS)

10

5.0

0.1

0.3

2.0

3.0

Figure 2. Maximum Rated Forward Bias

Safe Operating Area

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

1.0 2.0 4.0 6.0 10 20

0.2

0.5

1.0

20

30

50

100

40 60

SECONDARY BREAKDOWN LIMIT

BONDING WIRE LIMIT

THERMAL LIMIT @ TC = 25°C

TJ = 150°C

300 ms

1.0ms

10ms

dc

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 2 is based on TC = 25°C; TJ(pk) is

variable depending on power level. Second breakdown

pulse limits are valid for duty cycles to 10% but must be

derated for temperature.

TIP3055 (NPN), TIP2955 (PNP)

http://onsemi.com

5

PACKAGE DIMENSIONS

SOT−93 (TO−218)

CASE 340D−02

ISSUE E

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

A

D

V

G

K

SL

U

BQ

123

4

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

E

C

J

H

DIM MIN MAX MIN MAX

INCHESMILLIMETERS

A--- 20.35 --- 0.801

B14.70 15.20 0.579 0.598

C4.70 4.90 0.185 0.193

D1.10 1.30 0.043 0.051

E1.17 1.37 0.046 0.054

G5.40 5.55 0.213 0.219

H2.00 3.00 0.079 0.118

J0.50 0.78 0.020 0.031

K31.00 REF 1.220 REF

L--- 16.20 --- 0.638

Q4.00 4.10 0.158 0.161

S17.80 18.20 0.701 0.717

U4.00 REF 0.157 REF

V1.75 REF 0.069

TO−247

CASE 340L−02

ISSUE F

N

P

A

K

W

F

D

G

U

E

0.25 (0.010) MYQS

J

H

C

4

123

−T−

−B−

−Y−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

2 PL

3 PL

0.63 (0.025) MTBM

−Q−

LDIM MIN MAX MIN MAX

INCHESMILLIMETERS

A20.32 21.08 0.800 8.30

B15.75 16.26 0.620 0.640

C4.70 5.30 0.185 0.209

D1.00 1.40 0.040 0.055

E1.90 2.60 0.075 0.102

F1.65 2.13 0.065 0.084

G5.45 BSC 0.215 BSC

H1.50 2.49 0.059 0.098

J0.40 0.80 0.016 0.031

K19.81 20.83 0.780 0.820

L5.40 6.20 0.212 0.244

N4.32 5.49 0.170 0.216

P--- 4.50 --- 0.177

Q3.55 3.65 0.140 0.144

U6.15 BSC 0.242 BSC

W2.87 3.12 0.113 0.123

STYLE 3:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

TIP3055 (NPN), TIP2955 (PNP)

http://onsemi.com

6

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TIP3055/D

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