DATA SH EET
Product data sheet
Supersedes data of 1999 Apr 29 2004 Jan 22
DISCRETE SEMICONDUCTORS
PMBTA06
NPN general purpose transistor
2004 Jan 22 2
NXP Semiconductors Product data sheet
NPN general purpose transistor PMBTA06
FEATURES
High current (max. 500 mA)
Low voltage (max. 80 V).
APPLICATIONS
General purpose switc hing and amplification in e.g.
telephony and profes sional communication equipme nt.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complement: PMBTA56.
MARKING
Note
1. * = p : Made in Hong Kong .
* = t : Made in Malaysia.
* = W : Made in China.
PINNING
TYPE NUMBER MARKING CODE(1)
PMBTA06 *1G
PIN DESCRIPTION
1base
2emitter
3collector
Fig.1 Simplified outline (SOT23 ) and symbo l .
handbook, halfpage
21
3
MAM255
Top view
2
3
1
ORDERING INFORMATION
LIMITING VALUES
In accordance with th e Absolute Ma ximum Ratin g System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit boar d.
TYPE
NUMBER PACKAGE
NAME DESCRIPTION VERSION
PMBTA06 plastic surface mounted p a ckage; 3 leads SOT23
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base volta ge open emitter 80 V
VCEO collector-emitter voltage open base 80 V
VEBO emitter-base voltage open collector 4 V
ICcollector current (DC) 500 mA
ICM peak collector current 1 A
IBM peak base current 200 mA
Ptot total power dissipation Tamb 25 °C; note 1 250 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb operating ambient temperature 65 +150 °C
2004 Jan 22 3
NXP Semiconductors Pr oduct data shee t
NPN general purpose transistor PMBTA06
THERMAL CHARACTE RISTICS
Note
1. Transistor mounted on an FR4 printed-circuit boar d.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 80 V 50 nA
IEBO emitter cut-off current IC = 0; VEB = 5 V 50 nA
hFE DC current gain IC = 10 mA; VCE = 1 V 100
IC = 100 mA; VCE = 1 V 100
VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 10 mA 0.25 V
VBE base-emitter vo ltage IC = 100 mA; VCE = 1 V 1.2 V
fTtransition freque ncy IC = 10 mA; VCE = 2 V; f = 100 MHz 100 MHz
2004 Jan 22 4
NXP Semiconductors Pr oduct data shee t
NPN general purpose transistor PMBTA06
PACKAGE OUTLINE
UNIT A
1
max. b
p
cDE e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT2
3
2004 Jan 22 5
NXP Semiconductors Pr oduct data shee t
NPN general purpose transistor PMBTA06
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product s ta tus of device(s ) described in this document may have changed since this do cument was publishe d
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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published in this doc ument, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification .
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other co nditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick refer ence data The Quick reference data is an
extract of th e product data given in the Limiting values an d
Characteristics sections of this docu ment, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
Contact information
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this document d oes not form part o f an y q uotation or contra ct, is b elieve d t o b e a ccur ate a nd re li a ble and may be chan ged
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the technical content, exc ept for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R75/05/pp6 Date of release: 2004 Jan 22 Document order number: 9397 750 12506