
T4-LDS-0185-3, Rev. 1 (4/24/13) ©2013 Microsemi Corporation Page 3 of 7
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted
Parameters / Test Conditions Symbol Min. Max. Unit
Collector-Emitter Breakdown Voltage
V(BR)CEO 80 V
Collector-Base Cutoff Current
VCB = 140 V
ICBO 10 µA
Emitter-Base Cutoff Current
IEBO1 10 µA
Collector-Emitter Cutoff Current
ICES 10 nA
Emitter-Base Cutoff Current
IEBO2 10 nA
Forward-Current Transfer Ratio
C
CE
IC = 0.1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
hFE
50
90
50
300
300
Collector-Emitter Saturation Voltage
C
B
IC = 500 mA, IB = 50 mA VCE(sat)
0.5 V
Base-Emitter Saturation Voltage
VBE(sat) 1.1 V
Parameters / Test Conditions
Small-Signal Shor t-Circuit Forward Current Transfer Ratio
IC = 1.0 mA, VCE = 5. 0 V, f = 1.0 kHz hfe 80 400
Magnitude of Small-Signa l Short -Circuit Forward Current
Transfer Ratio
IC = 50 mA, VCE = 10 V, f = 20 MHz |hfe| 5.0 20
VCB = 10 V, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 12 pF
VEB = 0.5 V, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz Cibo 60 pF