Rev.2.00 Sep 07, 2005 page 1 of 7
2SK1636(L), 2SK1636(S)
Silicon N Channel MOS FET REJ03G0961-0200
(Previous: ADE-208-13 04)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary br eakdown
• Suitable for sw i t c hi ng regulator and DC - DC con verter
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK(L))
1. Gate
2. Drain
3. Source
4. Drain
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1))
D
G
S
123
4
123
4
2SK1636(L) , 2SK 163 6( S)
Rev.2.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 250 V
Gate to source voltage VGSS ±30 V
Drain current ID 15 A
Drain peak current ID(pulse)*1 60 A
Body to drain diode reverse drain current IDR 15 A
Channel dissipation Pch*2 75 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown voltage V(BR)DSS 250 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0
Zero gate voltage drain current IDSS — — 250 µA VDS = 200 V, VGS = 0
Gate to source cutoff volta ge VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V
Static drain to source on state
resistance RDS(on) — 0.22 0.27 Ω I
D = 8 A, VGS = 10 V *3
Forward transfer admittance |yfs| 6.0 10.0 — S ID = 8 A, VDS = 10 V *3
Input capacitan ce Ciss — 1250 — pF
Output capacitance Coss — 510 — pF
Reverse transfer capacitance Crss — 85 — pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time td(on) — 24 — ns
Rise time tr — 85 — ns
Turn-off delay time td(off) — 110 — ns
Fall time tf — 60 — ns
ID = 8 A, VGS = 10 V,
RL = 3.75 Ω
Body to drain diode forward voltage VDF — 1.0 — V IF = 15 A, VGS = 0
Body to drain diode reverse recovery
time trr — 400 — ns IF = 15 A, VGS = 0,
diF/dt = 100 A/µs
Note: 3. Pulse test
2SK1636(L) , 2SK 163 6( S)
Rev.2.00 Sep 07, 2005 page 3 of 7
Main Characteristics
120
80
40
0 50 100 150
Case Temperature T
C
(°C)
Channel Dissipation Pch (W)
Power vs. Temperature Derating
100
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Maximum Safe Operation Area
1
30
10
3
1
0.3
0.1
3 1,00
0
30010010 30
100 µs
1 ms
DC Operation (T
C
= 25
°
C)
PW = 10 ms (1 Shot)
10 µs
Ta = 25
°
C
Operation in this area
is limited by R
DS (on)
20
820
Drain to Source Voltage V
DS
(V)
Typical Transfer Characteristics
16
4
412160
8
12
Drain Current I
D
(A)
V
GS
= 3.5 V
4.5 V
5 V
4 V
5.5 V
Pulse Test
10 V 8 V 20
410
Drain to Source Voltage V
DS
(V)
Typical Transfer Characteristics
16
4
2680
8
12
Drain Current I
D
(A)
V
DS
= 10 V
Pulse Test
Ta
= 75
°
C
25
°
C
–25
°
C
10
410
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage V
DS (on)
(V)
8
2
2680
4
6
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
I
D
= 15 A
10 A
5 A
Pulse Test
5
100
Drain Current I
D
(A)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
1
Static Drain to Source on State
Resistance vs. Drain Current
2
1
0.5
0.2
0.1
0.05
2 5 10 20 50
V
GS
= 10 V
Pulse Test
15 V
2SK1636(L) , 2SK 163 6( S)
Rev.2.00 Sep 07, 2005 page 4 of 7
1.0
40 160
Case Temperature TC (°C)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
0.8
0.2
0 80 120
0
0.4
0.6
Static Drain to Source on State
Resistance vs. Temperature
–40
Pulse Test
V
GS
= 10 V
I
D
= 15 A 10 A
5 A
50
50
Forward Transfer Admittance yfs (S)
Forward Transfer Admittance
vs. Drain Current
0.5
20
10
5
2
1
0.5
Drain Current I
D
(A)
12 51020
V
DS
= 10 V
Pulse Test
T
C
= –25°C
25°C
75°C
1,000
50
Reverse Drain Current IDR (A)
Reverse Recovery Time trr (ns)
Body to Drain Diode Reverse
Recovery Time
0.5
200
100
20
10
12 51020
di/dt = 100 A/µs, Ta = 25°C
V
GS
= 0
500
50
10,000
20 50
Drain to Source Voltage VDS (V)
Capacitance C (pF)
10 30 40
Typical Capacitance vs.
Drain to Source Voltage
0
1,000
100
10
V
GS
= 0
f = 1 MHz
Crss
Coss
Ciss
500
40 100
Gate Charge Qg (nc)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
400
100
20 60 800
200
300
20
16
4
0
8
12
Gate to Source Voltage V
GS
(V)
V
DD
= 50 V
100 V
200 V
V
DD
= 200 V
100 V
50 V
I
D
= 15 A
V
GS
V
DS
500
20
Drain Current ID (A)
Switching Time t (ns)
0.2
Switching Characteristics
200
100
50
20
10
5
0.5 2 5110
V
GS
= 10 V, PW = 2 µs
duty < 1%
t
d (off)
t
f
t
d (on)
t
r
2SK1636(L) , 2SK 163 6( S)
Rev.2.00 Sep 07, 2005 page 5 of 7
20
0.8 2.0
Source to Drain Voltage VSD (V)
Reverse Drain Current IDR (A)
16
0.4 1.2 1.6
8
12
Reverse Drain Current vs.
Source to Drain Voltage
0
4
Pulse Test
V
GS
= 10 V
V
GS
= 0, –5 V
3
Pulse Width PW (S)
Normalized Transient Thermal Impedance γS (t)
1.0
0.1
0.3
10 µ
0.03
0.01
100 µ10 m 100 m 1 101 m
Normalized Transient Thermal Impedance vs. Pulse Width
PW
P
DM
D = T
PW
θch–c (t) = γ
S
(t) • θch–c
θch–c = 1.67°C/W, T
C
= 25°C
T
T
C
= 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1 Shot Pulse
Switching Time Test Circuit
Vin Monitor
Vout Monitor
R
L
V
DD
30 V
D.U.T
50 Ω
Vin
10 V =
..
Vout
Waveforms
t
d
(on)
10%
10%
90% 90%
10%
90%
Vin
t
r
t
d
(off)
t
f
2SK1636(L) , 2SK 163 6( S)
Rev.2.00 Sep 07, 2005 page 6 of 7
Package Dimensions
10.2 ± 0.3
0.86
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
+ 0.2
– 0.1
1.3 ± 0.2
4.44 ± 0.2
1.3 ± 0.15
2.49 ± 0.2
0.4 ± 0.1
11.0 ± 0.5
8.6 ± 0.3
10.0
11.3 ± 0.5
+ 0.3
– 0.5
(1.4)
1.37 ± 0.2
Package Name
PRSS0004AE-A LDPAK(L) / LDPAK(L)V
MASS[Typ.]
1.40g
RENESAS CodeJEITA Package Code
Unit: mm
10.2 ± 0.3
1.37 ± 0.2
(1.5)
(1.4)
8.6 ± 0.3
10.0
+ 0.3
– 0.5
4.44 ± 0.2
1.3 ± 0.15
0.1
+ 0.2
– 0.1
0.4 ± 0.1
2.49 ± 0.2
0.86
+ 0.2
– 0.1
2.54 ± 0.5
2.54 ± 0.5
1.3 ± 0.2
3.0
+ 0.3
– 0.5
(1.5)
7.8
6.6
2.2
1.7
7.8
7.0
SC-83 1.30g
MASS[Typ.]
LDPAK(S)-(1) / LDPAK(S)-(1)V
PRSS0004AE-B
RENESAS CodeJEITA Package Code Package Name
Unit: mm
2SK1636(L) , 2SK 163 6( S)
Rev.2.00 Sep 07, 2005 page 7 of 7
Ordering Information
Part Name Quantity Shipping Container
2SK1636L-E 500 pcs Box (Sack)
2SK1636STL-E 1000 pcs Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
http://www.renesas.com
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology (Shanghai) Co., Ltd.
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea
Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
Renesas Technology Malaysia Sdn. Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510
RENESAS SALES OFFICES
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0
