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0.01
0.1
1.0
10
100
0 0.4 0.8 1.0 1.6 1.80.60.2 1.2 1.4
I , INSTANTANEOUS FORWARD CURRENT (A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics (per element)
F
T = 25°C
j
Pulse Width = 300µs
0
100
200
300
400
1 10 100
I , PEAK FWD. SURGE CURRENT (A)
FSM
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Surge Current
Single Half-Sine Wave
(JEDEC Method)
T = 150°C
j
10
100
1000
0.1 1.0 10 100
C , CAPACITANCE (pF)
j
V , REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance (per element)
R
f=1Mhz
T = 25°C
j
0.01
0.1
1.0
10
100
4020 60 80 100 120 140
I , INSTANTANEOUS REVERSE CURRENT (µA)
R
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics (per element)
T = 125°C
j
T = 25°C
j
0
10
20
0 25 50 75 100 125 150
I , AVERAGE FORWARD CURRENT (A)
F
T , CASE TEMPERATURE (°C)
Fig. 1 Forward. Current Derating Curve
C
Resistive or
Inductive load
Mounted on a
220x220x50mm
AL plate heatsink
30
40
GBPC15
GBPC25
GBPC35
GBPC35
GBPC15, 25
GBPC15, 25
GBPC35
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SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement.
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operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
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