BZX85C Series Zener diode Features 1. High reliability 2. Low reverse current 3. Very sharp reverse characteristic Applications Voltage stabilization Absolute Maximum Ratings Tj=25 Parameter Test Conditions Power dissipation Type I=4mm TL25 Junction temperature Storage temperature range Symbol Value Unit PV 1.3 W Tj 175 Tstg -65~+175 Symbol Value Unit RthJA 110 K/W Maximum Thermal Resistance Tj=25 Parameter Junction ambient Test Conditions I=4mm ,TL=constant Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may affect device reliability. Electrical Characteristics Tj=25 Parameter Forward voltage Test Conditions Type IF=200mA Symbol VF Min Typ Max Unit 1 V Excel Semiconductor www.excel-semi.com FaxBack +86-512-66607370 Rev. 3f, 1-Jun-2008 1/4 BZX85C Series Type VZnom IZT for VZT and rzjT BZX85C 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 V 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 mA 80 80 80 60 60 50 45 45 45 35 35 35 25 25 25 20 20 20 15 15 15 10 10 10 8 8 8 8 6 6 4 4 4 4 4 4 V 2.5~2.9 2.8~3.2 3.1~3.5 3.4~3.8 3.7~4.1 4.0~4.6 4.4~5.0 4.8~5.4 5.2~6.0 5.8~6.6 6.4~7.2 7.0~7.9 7.7~8.7 8.5~9.6 9.4~10.6 10.4~11.6 11.4~12.7 12.4~14.1 13.8~15.6 15.3~17.1 16.8~19.1 18.8~21.2 20.8~23.3 22.8~25.6 25.1~28.9 28~32 31~35 34~38 37~41 40~46 44~50 48~54 52~60 58~66 64~72 70~79 <20 <20 <20 <20 <15 <13 <13 <10 <7 <4 <3.5 <3 <5 <5 <7 <8 <9 <10 <15 <15 <20 <24 <25 <25 <30 <30 <35 <40 <50 <50 <90 <115 <120 <125 <130 <135 rzjK at IZK <400 <400 <400 <500 <500 <500 <500 <500 <400 <300 <300 <200 <200 <200 <200 <300 <350 <400 <500 <500 <500 <600 <600 <600 <750 <1000 <1000 <1000 <1000 <1000 <1500 <1500 <2000 <2000 <2000 <2000 mA 1 1 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 IR A <150 <100 <40 <20 <10 <3 <3 <1 <1 <1 <1 <1 <1 <1 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 at VR V 1 1 1 1 1 1 1 1 1 2 3 5 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 TKVZ %/K -0.09~-0.06 -0.08~-0.05 -0.08~-0.05 -0.08~-0.05 -0.08~-0.05 -0.06~-0.03 -0.05~+0.02 -0.02~+0.02 -0.05~+0.05 0.03~0.06 0.03~0.07 0.03~0.07 0.03~0.08 0.03~0.09 0.03~0.1 0.03~0.11 0.03~0.11 0.03~0.11 0.03~0.11 0.03~0.11 0.03~0.11 0.03~0.11 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 Excel Semiconductor www.excel-semi.com FaxBack +86-512-66607370 Rev. 3f, 1-Jun-2008 2/4 BZX85C Series RthJA - Therm. Resist. Junction/ Ambient (K/W) Ptot -Total Power Dissipation (W) Characteristics (Tj=25 unless otherwise specified) Tamb - Ambient Temperature() l - Lead Length (mm) Figure2. Thermal Resistance vs. Lead Length CD -Diode Capacitance (pF) rz -Differential Z-Resistance () Figure1.Total Power Dissipation vs. Ambient Temperature Vz-Z-Voltage (V) Vz-Z-Voltage (V) Figure4.Differential Z-Resistance vs.Z-Voltage Zthp - Thermal Resistance for Pulse Cond. (K/W) Figure3. Diode Capacitance vs. Z-Voltage tp -Pulse Length (ms) Figure5. Thermal Response Excel Semiconductor www.excel-semi.com FaxBack +86-512-66607370 Rev. 3f, 1-Jun-2008 3/4 BZX85C Series Dimensions in mm Cathode identification 0.85 max. BZ X 8 5C Cathode 26 min. 4.5 max. Anode 2.8 max. 26 min. Standard Glass Case JEDEC DO-41 Marking BZ X 8 5C 8V2 Excel Semiconductor www.excel-semi.com FaxBack +86-512-66607370 Rev. 3f, 1-Jun-2008 4/4