AME, Inc.
1
AME8824
300mA CMOS LDO
n Typical Application
n Functional Block Diagram
l Very Low Dropout Voltage
l Guaranteed 300mA Output
l Typical accuracy within 2%
l 30µA Quiescent Current
l Over-Temperature Shutdown
l Current Limiting
l Short Circuit Current Fold-back
l Power Good Detector (6 pin version only)
l Power-Saving Shutdown Mode
l Space-Saving SOT-26
l Adjustable Output Voltages
l Low Temperature Coefficient
The AME8824 family of positive, linear regulators fea-
ture low quiescent current (30µA typ.) with low dropout
voltage, making them ideal for battery applications. The
space-saving SOT-26 package are attractive for "Pocket"
and "Hand Held" applications.
These rugged devices have both Thermal Shutdown,
and Current Fold-back to prevent device failure under the
"Worst" of operating conditions.
The SOT-26 version also features a "Power Good" de-
tector, which pulls low when the output is out of regula-
tion.
The AME8824 is stable with an output capacitance of
2.2µF or greater.
l Instrumentation
l Portable Electronics
l Wireless Devices
l Cordless Phones
l PC Peripherals
l Battery Powered Widgets
l Electronic Scales
n General Description
n Features
n Applications
VOUT= 1.2 (R1 +R2)/R2
C2 is unnecessary when R1 or R2 < 20K
PG pin is only available in the SOT-26 package option
GND
OUTIN
ADJ
PG
Overcurrent
Shutdown
Thermal
Shutdown
EN
Vref =1.2V
Vref x90%
Vrefx110% AMP
OUT
IN
C3
2.2µF
5V
C2
100p
R1
R2
C1
1µF
AME8824
IN
EN
PG ADJ
OUT
GND
AME, Inc.
2
300mA CMOS LDO
AME8824
n Advanced Application
10K
AME
8824
ADJ
EN
VO
VIN 100µ
VO=1.2VVIN =3.3V
100µ
100K
100
Ohm
1µ
PG GND
AME, Inc.
3
AME8824
300mA CMOS LDO
n Pin Configuration
AME8824
1. VIN
2. GND
3. EN
4. PG
5. ADJ
6. VOUT
SOT-26
Top View
1 32
6 45
AME8824
n Ordering Information
Operating Temperature Range
Number of Pins
Package Type
Product Grade or Option
Special Feature
AME8824 x x x x x
A:
ADJ
E:
-40
O
C to 85
O
C
E:
SOT-2X
Y:
6
L:
Y:
Lead Free & Low Profile
Z:
Lead Free
Special Feature
Product
Grade
or Option
Operating
Temperature Range Package Type Number of
Pins
AME, Inc.
4
300mA CMOS LDO
AME8824
Parameter Rating Unit
Ambient Temperature Range - 40 to + 85 oC
Junction Temperature - 40 to + 125 oC
n Absolute Maximum Ratings
n Recommended Operating Conditions
n Thermal Information
Caution: Stress above the listed absolute maximum rating may cause permanent damage to the device
Parameter Maximum Unit
Input Voltage 8V
Output Current PD / (VIN - VO)mA
Input, Output Voltage GND - 0.3 to VIN + 0.3 V
ESD Classification B
Maximum Unit
Thermal Resistance (θja)SOT-26 260 oC / W
Internal Power Dissipation (PD)
(∆T = 100oC) SOT-26 380 mW
150 oC
300 oC
Maximum Lead Temperature (10 Sec)
Maximum Junction Temperature
Parameter
ww: represents the date code
* A line on top of the first character represents lead free plating
Please consult AME sales office or authorized Rep./Distributor for the availability of output voltage and package type.
Part Number Marking Output Voltage Package Operating Temp. Range
AME8824AEEY AUEww ADJ SOT-26 - 40oC to + 85oC
AME8824AEEYL AUEww ADJ TSOT-26 - 40oC to + 85oC
AME8824AEEYY AUEww ADJ TSOT-26 - 40oC to + 85oC
AME8824AEEYZ AUEww ADJ SOT-26 - 40oC to + 85oC
n Ordering Information (contd.)
AME, Inc.
5
AME8824
300mA CMOS LDO
Parameter Symbol Min Typ Max Units
Input Voltage VIN Note 1 7V
Output Voltage VO-3 3%
1.2V<=VO(NOM)
<=2.0V
1300
2.0V<VO(NOM)<=2.8V 400
2.8V<VO(NOM)<3.8V 300
Output Current IO300 mA
Current Limit ILIM 300 450 mA
Short Circuit Current ISC 150 300 mA
Quiescent Current IQ30 50 µA
Ground Pin Current IGND 35 µA
VO < 2.0V 0.15 %
VO >= 2.0V 0.02 0.1 %
Load Regulation REGLOAD 0.2 1%
Over Temerature Shutdown OTS 150 oC
Over Temerature Hysterisis OTH 30 oC
VO Temperature Coefficient TC 30 ppm/oC
f=1kHz 50
f=10kHz 20
f=100kHz 15
ADJ Input Bias Current IADJ 1µA
ADJ Reference Voltage VREF 1.176 1.2 1.224 V
VEH 2.0 Vin V
VEL 00.4 V
IEH 0.1 µA
IEL 0.5 µA
Shutdown Supply Current ISD 0.5 1µA
Shutdown Output Voltage VO,SD 00.1 V
Output Under Voltage VUV 85 %VO(NOM)
Output Over Voltage VOV 115 %VO(NOM)
PG Leakage Current ILC 1µA
PG Voltage Rating VPG 7V
PG Voltage Low VOL 0.4 V
IO=1mA
Dropout Voltage VDROPOUT
Test Condition
PSRR dB
IO=300mA
VO=VONOM -2.0% mV
VO>1.2V
VO>1.2V
VO<0.8V
IO=0mA
IO=1mA to 300mA
Line Regulation REGLINE IO=5mA
VIN=VO+1 to VO+2
IO=1mA to 300mA
Output Voltage Noise eN f=10Hz to 100kHz
IO=10mA,CBYP=0µF
Power Supply Rejection IO=100mA
CO=2.2µF
µVrms
VIN=5V, VO=0V, VEN<VEL
EN Input Threshold VIN=2.7V to 7V
VIN=2.7V to 7V
EN Input Bias Current VEN=VIN, VIN=2.7V to 7V
VEN=0V, VIN=2.7V to 7V
ISINK=0.4mA
Co=2.2µF30
VPG=7V
VO in regulation
IO=35µA,VEN<VEL
n Electrical Specifications
TA = 25OC, VIN=5V unless otherwise noted
Note1:VIN(min)=VOUT+VDROPOUT
AME, Inc.
6
300mA CMOS LDO
AME8824
Ground Current vs. Input Voltage Load Step (1mA-300mA)
Power Supply Rejection Ratio Chip Enable Transient Response
Drop Out Voltage vs. Output Voltage Drop Out Voltage vs. Load Current
Ground Current (µ A)
Input Voltage (V)
0
5
10
15
20
25
30
35
40
45
012345678
85OC
25OC
PSRR (dB)
100mA
10mA
1mA
100 µA
100mA
100 µA
CL=2.2µF Tantalum
CBYP=0
-80
-70
-60
-50
-40
-30
-20
-10
0
10 1K 100K
Frequency (Hz)
10M
0
50
100
150
200
250
300
2.5 2.75 33.25 3.5 3.75 4
Output Voltage (V)
Drop Out Voltage (mV)
ILOAD=300mA
ILOAD=200mA
ILOAD=100mA
0
50
100
150
200
250
0 50 100 150 200 250 300
Load Current (mA)
Dropout Voltage (mV)
Top to bottom
VOUT=2.5V
VOUT=2.8V
VOUT=3.0V
VOUT=3.3V
VOUT=3.5V
VOUT=3.8V
Tantalum
bottom
0
0
TIME (1mS/DIV)
CL=2µF
RL=10Ω
Output (1V/DIV) Enable (2V/DIV)
TIME(20mS/DIV)
CL=2.2µF
CIN =2.2µF
Output
ILoad
0
IL(200mA/DIV)VO (5mV/DIV)
AME, Inc.
7
AME8824
300mA CMOS LDO
Ground Current vs. Input Voltage Load Step (1mA-300mA)
Power Supply Rejection Ratio Chip Enable Transient Response
Drop Out Voltage vs. Output Voltage Drop Out Voltage vs. Load Current
Ground Current (µ A)
Input Voltage (V)
0
5
10
15
20
25
30
35
40
45
012345678
85OC
25OC
PSRR (dB)
100mA
10mA
1mA
100 µA
100mA
100 µA
CL=2.2µF Tantalum
CBYP=0
-80
-70
-60
-50
-40
-30
-20
-10
0
10 1K 100K
Frequency (Hz)
10M
0
50
100
150
200
250
300
2.5 2.75 33.25 3.5 3.75 4
Output Voltage (V)
Drop Out Voltage (mV)
ILOAD=300mA
ILOAD=200mA
ILOAD=100mA
0
50
100
150
200
250
0 50 100 150 200 250 300
Load Current (mA)
Dropout Voltage (mV)
Top to bottom
VOUT=2.5V
VOUT=2.8V
VOUT=3.0V
VOUT=3.3V
VOUT=3.5V
VOUT=3.8V
Tantalum
bottom
0
0
TIME (1mS/DIV)
CL=2µF
RL=10Ω
Output (1V/DIV) Enable (2V/DIV)
TIME(20mS/DIV)
CL=2.2µF
CIN =2.2µF
Output
ILoad
0
IL(200mA/DIV)VO (5mV/DIV)
AME, Inc.
8
300mA CMOS LDO
AME8824
Stability vs. ESR vs. ILoad Stability vs. ESR vs. ILoad
Stability vs. ESR vs. ILoad
Stability vs. ESR vs. ILoad
ESR ( Ω )
ILOAD (mA)
0.01
0.1
1
10
100
1000
10000
050 100 150 200
Stable Region
Untested Region
Unstable Region
CL=1µF
ILOAD (mA)
ESR ( Ω )
0.01
0.1
1
10
100
1000
10000
0 50 100 150 200
Stable Region
Untested Region
Unstable Region
CL=2µF
0.01
0.1
1
10
100
1000
10000
0 50 100 150 200
Stable Region
Untested Region
Unstable Region
ILOAD (mA)
ESR ( Ω )
CL=3µF
0.001
10000
0.01
0.1
1
10
100
1000
0 50 100 150 200
Stable Region
Untested Region
Unstable Region
CL=10µF
ILOAD (mA)
ESR ( Ω )
AME, Inc.
9
AME8824
300mA CMOS LDO
n Package Dimension
SOT-26
Side View
L
θ1
Top View
S1
D
e
E
H
Front View
b
A
A1
MIN MAX MIN MAX
A
A10.00 0.15 0.0000 0.0059
b0.30 0.55 0.0118 0.0217
D2.70 3.10 0.1063 0.1220
E1.40 1.80 0.0551 0.0709
e
H2.60 3.00 0.10236 0.11811
L
θ10o10o0o10o
S1
1.90 BSC 0.0748 BSC
SYMBOLS MILLIMETERS INCHES
1.20REF 0.0472REF
0.37REF 0.0146REF
0.95REF 0.0374REF
TSOT-26
Side View
L
θ1
Top View
S1
D
e
E
H
Front View
b
A
A1
MIN MAX MIN MAX
A+A10.90 1.25 0.0354 0.0492
b0.30 0.50 0.0118 0.0197
D2.70 3.10 0.1063 0.1220
E1.40 1.80 0.0551 0.0709
e
H2.40 3.00 0.09449 0.11811
L
θ10o10o0o10o
S1
0.35BSC 0.0138BSC
0.95BSC 0.0374BSC
1.90 BSC 0.07480 BSC
SYMBOLS MILLIMETERS INCHES
Life Support Policy:
These products of AME, Inc. are not authorized for use as critical components in life-support
devices or systems, without the express written approval of the president
of AME, Inc.
AME, Inc. reserves the right to make changes in the circuitry and specifications of its devices and
advises its customers to obtain the latest version of relevant information.
AME, Inc. , December 2004
Document: 2006-DS8824-C
Corporate Headquarter U.S.A.(Subsidiary)
AME, Inc. Analog Microelectronics, Inc.
2F, 302 Rui-Guang Road, Nei-Hu District 3100 De La Cruz Blvd., Suite 201
Taipei 114, Taiwan. Santa Clara, CA. 95054-2046
Tel: 886 2 2627-8687 Tel : (408) 988-2388
Fax: 886 2 2659-2989 Fax: (408) 988-2489
www.ame.com.tw
E-Mail: sales@ame.com.tw