MOTOROLA SC IXSTRS/R FF 6367254 MOTOROLA SC (XSTRS S6D 82066 = qb DEBfba7254 ooseoun 7 I | iR FS GC * a 1 ~ ae J MAXIMUM RATINGS T-31-15 Rating Symbol Value Unit Coltector-Emitter Valtage VcEO 20 Vde MMBTH8 1 Collector-Base Voltage Vceo 20 Vdc Emitter-Base Voltage VEBO 3.0 Vde CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-S Board,* Pp 225 mw 3 Collectar Ta = 25C 4 Derate above 25C 18 mwrc 1 Thermal Resistance Junction to Ambient RaJa 556 Cimw 1 ge Base Total Device Dissipation Pp 300 mw 2 2 Emutier Alumina Substrate,** Ta = 25C Derate above 25C 24 mWPre Thermal Resistance Junction to Ambient RaJA 417 CimW Junction and Storage Temperature Ty. Tstg 150 C UHF/VHF TRANSISTOR *FR-5 = 1.0 x 0.75 x 0.62 in. **Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. PNP SILICON DEVICE MARKING [ MMBTHa1 = 3D | ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Characteristic | Symbol | Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage ViBRICEO 20 _ _ Vde (Ic = 1.0 mAde, Ig = 0) Collector-Base Breakdown Voltage VIBRICBO 20 ~ _ Vde (lg = 10 pAdc, Ig = 0) Emitter-Base Breakdown Voltage V(BRIEBO 3.0 - Vdc {le = 10 pAde, tc = 0) Collector Cutoff Current IcBo _- _ 100 nAdc (VoBp = 10 Vde, Ip = 0} Emitter Cutoff Current lEBO _ _ 100 nAdc {VBE = 2.0 Vde, Ic = 0) ON CHARACTERISTICS DC Current Gain hee 60 - _ (lc = 5.0 mAdc, Veg = 10 Vdc} Collector-Emitter Saturation Voltage VCE(sat) - _ 0.5 Vde (Ic = 5.0 mAdc, Ig = 0.6 mAdc) Base-Emitter On Voltage VBE(on) - _ 0.9 Vde (Ic = 5.0 mAde, Voce = 10 Vde} SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product fT 600 ~ MHz (Ic = 5.0 mAdc, Voce = 10 Vdc, f = 100 MHz) Collector-Base Capacitance Cob 0.85 pF (cog = 10 Vde, le = 0, f = 1.0 MHz) Collector-Emitter Capacitance Cee _ _ 0.65 pF (Ig = 0, Veg = 10 Vde, f = 1.0 MHz) MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-131MOTOROLA SC {XSTRS/R Ft qo De @eae7254 ansenye 5 i a Z-t- O 7 ae waa oe = - - - ~ 6367254 MOTOROLA SC (XSTRS/R F) 96D 82146 D | Tee y we ee ee 7 -- - 729-9 MAXIMUM RATINGS CASE 26-03, STYLE Rating Symbol | 2N2945 | 2N2946 | Unit TO 1B TG, SUeAB) 1 Emitter-Coltector Voltage Veco | 20 35 Vde Collector-Base Voltage VcBO 25 40 Vdc Emitter-Base Voltage VEBO 25 40 Vde Collector Current Continuous Ic 100 Adc 7 Collector Total Device Dissipation @ Ta = 25C Pp 400 mW Derate above 25C 2.3 mWPC 2 Total Device Dissipation @ Tc = 25C Pp 2.0 Watts Base Derate above 25C 11,43 mWPC 3 , 2"1 1 Emitter Operating and Storage Junction Ty Tstg 65 to +200 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit TRANSISTOR Thermal Resistance, Junction to Case Rac 87.5 Cw PNP SILICON Thermal Resistance, Junction to Ambient Rosa 435 CW Refer to 2N2944A for graphs. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) [ Characteristic | Symbol Min Typ Max [| Unit | OFF CHARACTERISTICS Collector Cutoff Currant IcBo nAdc (Vep = 25 Vde, Ie = 0} 2N2945 - - 0.2 (VcR = 40 Vde, IE = 0) 2N2946 ~ 0.6 Emitter Cutoff Current lEBO nAdc (Veg = 25 Vde, Ic = 0) 2N2045 _ 02 (Veg = 40 Vdc, Ic = 0) 2N2946 _ 05 ON CHARACTERISTICS DC Current Gain hee _ (i = 1.0 mAdc, Veg = 0.5 Vde) 2N2945 40 160 _ 2N2946 30 130 _ *DC Current Gain (Inverted Connection} HFE(inv) _ {lg = 200 Ade, Vec = 0.5 Vde) 2N2945 4.0 17 ~ 2N2946 3.0 15 _ Offset Voltage VECIofs) mVde (Ig = 200 pAde, IE = 0) 2N2945 _ 0.23 0.5 2N2946 _- 0.27 0.8 (Ig = 1.0 mAde, IE = 0) 2N2945 _ 0.5 1.0 2N2946 _ 0.6 2.0 (ip = 2.0 mAdc, Iz = 0} 2N2945 0.9 1.6 2N2946 - 1.0 2.5 SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product fr MHz {Ic = 1.0 mAde, VoE = 6.0 Vde, f = 1.0 MHz) 2N2945 5.0 13 _ 2N2946 3.0 12 _ Output Capacitance (Vcg = 6.0 Vde, Iz = 0, f = 500 kHz) Cobo 3.2 10 pF Input Capacitance (Veg = 6.0 Vdc, Ic = 0, f = 500 kHz) Cibo _ 19 6.0 pF ON Series Resistance tec Ohms (lg = 1.0 mAde, Ie = 0, tg = 100 pArms, f = 1.0 kHz) 2N2945 _ 4.5 35 2N2946 _ 5.0 45 *Indicates Data in addition to JEDEC Requirements. MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 4-56MOTOROLA SC {XSTRS/R FI Th DE fuae7254 OOaeeed 2 a 6367254 MOTOROLA SC CXSTRS/R F) 96D 62220 | 36 1 MAXIMUM RATINGS 2N3735 2N3734 . Rating Symbol | 2N3734 | 2N3737 | Unit Collector-Emitter Voltage VcEO 30 50 Vde 2N3735 Collector-Base Voltage VcBo 50 75 Vde CASE 79-02, STYLE 1 3 Emitter-Base Voltage VEBO 5.0 Vde TO-39 (TO-205AD) 0%} Collector Current Continuous Ic 1.6 Adc 3 Collector TO-39 2N3734 | TO-46 2N3735 | 2N3737 2 Total Device Dissipation @ Ta = 25C Pp 1.0 0.5 Watt Base Derate above 25C 5.71 2.86 mwrc te mitter Total Device Dissipation @ Tc = 26C Pp 4.0 20 | Watts Derate above 25C 22.8 11.4 mWwrc 2N3737 Operating and Storage Junction TJ, Tstg -65 to +200 C CASE 26-03, STYLE 1 Temperature Range TO-46 (TO-206AD) THERMAL CHARACTERISTICS 2N3735 GENERAL PURPOSE Characteristic Symbol {| 2N3734 | 2N3737 Unit TRANSISTOR Thermal Resistance, Junction to Case Rese 0.044 | 0.088 | CimW 1 Thermal Resistance, Junction to Ambient | Raja | 0.175 | 0.35 | CimW NPNSILICON =? Refer to 2N3725 for graphs. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) | Charactori Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) V(BRICEO Vde {ic = 10 mAde, Ig = 0} 2N3734 30 2N3735, 2N3737 50 - Collector-Base Breakdown Voltage ViBR)CBO Vde (lc = 10 pAde, IE = 0) 2N3734 50 - 2N3735, 2N3737 75 _- Emitter-Base Breakdown Voltage ViBRIEBO 5.0 _ Vde (IE = 10 pAde, Ic = 0) Collector Cutoff Current IcEX pAdc (VcE = 25 Vde, Veg = 2 Vde} 2N3734 _ 0.20 (Vc = 26 Vde, Veg = 2 Vde, Ta = 100C) - 20 (VcE = 40 Vde, Veg = 2 Vde} 2N3736, 2N3737 0.20 (VcE = 40 Vde, Veg = 2 Vde, Ta = 100C) 20 Base Cutoff Current IBL Adc (Vcg = 25 Vde, Ven = 2 Vde) 2N3734 _ 0.3 } (VcE = 40 Vdc, Veg = 2 Vde) 2N3735, 2N3737 _ 0.3 i ON CHARACTERISTICS (DC Current Gain(1)} hee _ (ig = 10 mAdc, Voce = 1 Vde) 35 - (i = 150 mAdc, VcE = 1 Vdc) 40 - {ic = 500 mAdec, Veg = 1 Vdc} 35 _ (ic = 1 Ade, Vog = 1.6 Vd) 2N3734 30 120 2N3735, 2N3737 20 80 lic = 1.5 Ade, Voge = Vde) 2N3734 30 _ 2N3735, 2N3737 20 _ Collector-Emitter Saturation Voltage(1) VcElsat) Vde (I = 10 mAde, Ig = 1 mAdc) - 0.2 (I = 180 mAdg, Ig = 15 mAdc} - 0.3 (Ic = 500 mAde, ig = 50 mAdc) _ 06 (Ig = 1 Ade, fg = 100 mAdc} - 0.9 Base-Emitter Saturation Voltage(1) VBE(sat) Vde (lg = 10 mAde, Ip = 1 mAdc) _ 0.8 {Il = 150 mAdg, Ip = 15 mAdc) _ 1.0 (ig = 500 mAde, Ig = 50 mAdc) - 1.2 {Ig = 1 Ade, Ig = 100 mAdc} 0.9 1.4 MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 4-130MOTOROLA SC {XSTRS/R Ft qb DE Beae7esy OO8eech y I - 5387254 MOTOROLA SC C(XSTRS/R F) S6D 82221 D es . 2N3737 TT -3as- 71 ELECTRICAL CHARACTERISTICS (continued) (Ta = 25C untess otherwise noted.) ; [ Characteristic [ Symbol [Min | Max | Unit | SMALL-SIGNAL CHARACTERISTICS Output Capacitance Cobo ~ 9.0 pF : (Veg = 10 Vdc, ig = 0, f = 100 kHz) Input Capacitance Cibo _ 80 pF (Vee = 0.5 Vde, I = 0, f = 100 kHz) Small-Signal Current Gain hfe 2.5 _ _ {ic = 50 mAdc, Voge = 10 Vde, f = 100 MHz) SWITCHING CHARACTERISTICS Turn-On Time ton _ 40 ns (Vcc = 30 V, VBE(off} = 2.0 V, I = 1.0 Amp, !p1 = 100 mA) Turn-Off Time toff _ 60 ns (Vec = 30 V, VaE(otf) = 2.0 V. Ic = 1.0 Amp, lpi = 100 mA) Total Contro! Charge Q, - 70 NC {lg = 1 Amp, Ig = 100 mA, Voc = 30 V) (1) Pulse Test: Pulse Width = 300 js, Duty Cycle = 2.0%. MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 4-131