NSVBC817-40WT1G - APTINA IMAGING

May, 2016 − Rev. 2 1Publication Order Number:

BC817−40W/D

BC817-40W

45 V, 0.5 A, General

Purpose NPN Transistor

ON Semiconductor’s BC817−40W is a General Purpose NPN

Transistor that is housed in the SC−70/SOT−323 package.

Features

•NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

•This Device is Pb−Free, Halogen Free/BFR Free and is RoHS

Compliant

MAXIMUM RATINGS (TA = 25°C)

Rating Symbol Value Unit

Collector − Emitter Voltage VCEO 45 V

Collector − Base Voltage VCBO 50 V

Emitter − Base Voltage VEBO 5.0 V

Collector Current − Continuous IC500 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation (Note 1) PD460 mW

Thermal Resistance,

Junction−to−Ambient (Note 1) RqJA 272 °C/W

Junction and Storage Temperature

Range TJ, Tstg −55 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be af fected.

1. FR−4 Board, 1 oz. Cu, 100 mm2

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COLLECTOR

BASE

EMITTER

SC−70

CASE 419

STYLE 3

MARKING DIAGRAM

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

CE MG

CE = Specific Device Code

M = Date Code

G= Pb−Free Package

Device Package Shipping

ORDERING INFORMATION†

BC817−40WT1G SC−70

(Pb−Free) 3000 / Tape &

Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

NSVBC817−40WT1G SC−70

(Pb−Free) 3000 / Tape &

Reel

BC817−40W

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = 10 mA) V(VR)CEO 45 − − V

Collector−Emitter Breakdown Voltage

(VEB = 0 V, IC = 10 mA) V(VR)CES 50 − − V

Emitter−Base Breakdown Voltage

(IE = 1.0 mA) V(VR)EBO 5.0 − − V

Collector Cutoff Current

(VCB = 20 V)

(VCB = 20 V, TA = 150°C)

ICBO −

−−

−100

5.0 nA

ON CHARACTERISTICS

DC Current Gain (Note 2)

(IC = 100 mA, VCE = 1.0 V)

(IC = 500 mA, VCE = 1.0 V)

hFE 250

40 −

−600

−

Collector−Emitter Saturation Voltage (Note 2)

(IC = 500 mA, IB = 50 mA) VCE(sat) − − 0.7 V

Base−Emitter On Voltage (Note 2)

(IC = 500 mA, VCE = 1.0 V) VBE(on) − − 1.2 V

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 10 mA, VCE = 5.0 V, f = 100 MHz) fT100 − − MHz

Output Capacitance

(VCB = 10 V, f = 1.0 MHz) Cobo − 10 − pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%

BC817−40W

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TYPICAL CHARACTERISTICS

Figure 1. DC Current Gain vs. Collector

Current Figure 2. Collector Emitter Saturation Voltage

vs. Collector Current

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

0.10.010.001

100

200

300

400

700

10.10.010.001

0.001

0.1

Figure 3. Base Emitter Saturation Voltage vs.

Collector Current Figure 4. Base Emitter Voltage vs. Collector

Current

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

10.10.010.0010.0001

0.2

0.3

0.5

0.6

0.7

0.8

1.0

1.1

10.10.010.0010.0001

0.2

0.3

0.5

0.6

0.8

0.9

1.0

1.2

hFE, DC CURRENT GAIN

VCE(sat), COLLECTOR−EMITTER

SATURATION VOLTAGE (V)

VBE(sat), BASE−EMITTER

SATURATION VOLTAGE (V)

VBE(on), BASE−EMITTER VOLTAGE (V)

VCE = 1 V

150°C

−55°C

25°C

IC/IB = 10

150°C

−55°C

25°C

0.4

0.9

IC/IB = 10

150°C

−55°C

25°C

0.4

0.7

1.1 VCE = 5 V

150°C

−55°C

25°C

Figure 5. Current Gain Bandwidth Product vs.

Collector Current

IC, COLLECTOR CURRENT (mA)

10001010.1

100

fT, CURRENT−GAIN−BANDWIDTH

PRODUCT (MHz)

VCE = 1 V

TA = 25°C

1000

100

500

600

0.01

BC817−40W

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TYPICAL CHARACTERISTICS

IB, BASE CURRENT (mA)

Figure 6. Saturation Region

100

VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

Figure 8. Capacitances

0.1 1

1 10 100 1000

-2

-1

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

V, TEMPERATURE COEFFICIENTS (mV/ C)°θ

C, CAPACITANCE (pF)

1.0

0.8

0.6

0.4

0.2

0.01 0.1 10 1001

10 100

TJ = 25°C

IC = 10 mA

qVC for VCE(sat)

qVB for VBE

Cob

Cib

100 mA 300 mA 500 mA

Figure 9. Safe Operating Area

VCE (Vdc)

10.1

0.1

0.01 10 100

0.01

0.001

IC (A)

Single Pulse Test @ TA = 25°C

Thermal Limit

100 ms

1 s 10 ms

1 ms

SC−70 (SOT−323)

CASE 419−04

ISSUE N

DATE 11 NOV 2008

SCALE 4:1

STYLE 3:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

STYLE 4:

PIN 1. CATHODE

2. CATHODE

3. ANODE

STYLE 2:

PIN 1. ANODE

2. N.C.

3. CATHODE

STYLE 1:

CANCELLED

STYLE 5:

PIN 1. ANODE

2. ANODE

3. CATHODE

STYLE 6:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

STYLE 7:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

AA2

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

0.05 (0.002)

STYLE 8:

PIN 1. GATE

2. SOURCE

3. DRAIN

STYLE 9:

PIN 1. ANODE

2. CATHODE

3. CATHODE-ANODE

STYLE 10:

PIN 1. CATHODE

2. ANODE

3. ANODE-CATHODE

1.9

0.075

0.65

0.025

0.65

0.025

0.9

0.035

0.7

0.028 ǒmm

inchesǓ

SCALE 10:1

XX MG

XX = Specific Device Code

M = Date Code

G= Pb−Free Package

GENERIC

MARKING DIAGRAM

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”,

may or may not be present.

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

DIM

MIN NOM MAX MIN

MILLIMETERS

0.80 0.90 1.00 0.032

INCHES

A1 0.00 0.05 0.10 0.000

A2 0.70 REF

b0.30 0.35 0.40 0.012

c0.10 0.18 0.25 0.004

D1.80 2.10 2.20 0.071

E1.15 1.24 1.35 0.045

e1.20 1.30 1.40 0.047

0.035 0.040

0.002 0.004

0.014 0.016

0.007 0.010

0.083 0.087

0.049 0.053

0.051 0.055

NOM MAX

2.00 2.10 2.40 0.079 0.083 0.095

e1 0.65 BSC

0.38

0.028 REF

0.026 BSC

0.015

0.20 0.56 0.008 0.022

STYLE 11:

PIN 1. CATHODE

2. CATHODE

3. CATHODE

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

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DOCUMENT NUMBER:

DESCRIPTION:

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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

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SC−70 (SOT−323)

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