1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
MAXIMUM RATINGS
Rating Symbol BC307, B, C BC308C Unit
Collector–Emitter Voltage VCEO –45 –25 Vdc
Collector–Base Voltage VCBO –50 –30 Vdc
Emitter–Base Voltage VEBO –5.0 Vdc
Collector Current — Continuous IC–100 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD350
2.8 mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD1.0
8.0 Watts
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg –55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
q
JA 357 °C/W
Thermal Resistance, Junction to Case R
q
JC 125 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage BC307,B,C
(IC = –2.0 mAdc, IB = 0) BC308C V(BR)CEO –45
–25 —
——
—Vdc
Emitter–Base Breakdown Voltage BC307,B,C
(IE = –100
m
Adc, IC = 0) BC308C V(BR)EBO –5.0
–5.0 —
——
—Vdc
Collector–Emitter Leakage Current
(VCES = –50 V, VBE = 0) BC307,B,C
(VCES = –30 V, VBE = 0) BC308C
(VCES = –50 V, VBE = 0) TA = 125°C BC307,B,C
(VCES = –30 V, VBE = 0) TA = 125°C BC308C
ICES —
—
—
—
–0.2
–0.2
–0.2
–0.2
–15
–15
–4.0
–4.0
nAdc
µA
Order this document
by BC307/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
123
Motorola, Inc. 1997
COLLECTOR
1
2
BASE
3
EMITTER
REV 1
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –10 µAdc, VCE = –5.0 Vdc) BC307B
BC307C/308C
(IC = –2.0 mAdc, VCE = –5.0 Vdc) BC307
BC307B/308B
BC307C/308C
(IC = –100 mAdc, VCE = –5.0 Vdc) BC307B
BC307C/308C
hFE —
—
120
200
420
—
—
150
270
—
290
500
180
300
—
—
800
460
800
—
—
—
Collector–Emitter Saturation V oltage
(IC = –10 mAdc, IB = –0.5 mAdc)
(IC = –10 mAdc, IB = see Note 1)
(IC = –100 mAdc, IB = –5.0 mAdc)
VCE(sat) —
—
—
–0.10
–0.30
–0.25
–0.3
–0.6
—
Vdc
Base–Emitter Saturation V oltage
(IC = –10 mAdc, IB = –0.5 mAdc)
(IC = –100 mAdc, IB = –5.0 mAdc)
VBE(sat) —
—–0.7
–1.0 —
—
Vdc
Base–Emitter On Voltage
(IC = –2.0 mAdc, VCE = –5.0 Vdc) VBE(on) –0.55 –0.62 –0.7 Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz) BC307,B,C
BC308C
fT—
—280
320 —
—
MHz
Common Base Capacitance
(VCB = –10 Vdc, IC = 0, f = 1.0 MHz) Ccbo — — 6.0 pF
Noise Figure
(IC = –0.2 mAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ,
f = 1.0 kHz) BC307,B,C
(IC = –0.2 mAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ,
f = 1.0 kHz, f = 200 Hz) BC308C
NF
—
—
2.0
2.0
10
10
dB
1. IC = –10 mAdc on the constant base current characteristic, which yields the point IC = –11 mAdc, VCE = –1.0 V.
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL CHARACTERISTICS
2.0
1.5
1.0
0.2
0.3
0.5
0.7
–200–0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100
IC, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
hFE, NORMALIZED DC CURRENT GAIN
VCE = –10 V
TA = 25
°
C
–1.0
–0.9
–0.8
–0.7
–0.6
–0.5
–0.4
–0.3
–0.2
–0.1
0
–0.1 IC, COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” Voltages
V, VOLTAGE (VOLTS)
TA = 25
°
CVBE(sat) @ IC/IB = 10
VBE(on) @ VCE = –10 V
VCE(sat) @ IC/IB = 10
400
20
30
40
60
80
100
200
300
IC, COLLECTOR CURRENT (mAdc)
Figure 3. Current–Gain — Bandwidth Product
fT, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
C, CAPACITANCE (pF)
10
1.0
2.0
3.0
5.0
7.0
–0.4 VR, REVERSE VOLTAGE (VOL TS)
Figure 4. Capacitances
TA = 25
°
C
Cib
Cob
rb, BASE SPREADING RESISTANCE (OHMS)
150
140
130
120
110
100
IC, COLLECTOR CURRENT (mAdc)
Figure 5. Output Admittance
–0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100
VCE = –10 V
TA = 25
°
C
–0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30 –50 –0.6 –1.0 –2.0 –4.0 –6.0 –10 –20 –30 –40
1.0
IC, COLLECTOR CURRENT (mAdc)
Figure 6. Base Spreading Resistance
VCE = –10 V
f = 1.0 kHz
TA = 25
°
C
′
–0.1 –0.2 –0.3 –0.5 –1.0 –2.0 –3.0 –5.0 –10
VCE = –10 V
f = 1.0 kHz
TA = 25
°
C
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10
0.01
0.03
0.05
0.1
0.3
0.5
h , OUTPUT ADMITTANCE (OHMS)
ob
150
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
HSECTION X–X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.022 0.41 0.55
F0.016 0.019 0.41 0.48
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 ––– 12.70 –––
L0.250 ––– 6.35 –––
N0.080 0.105 2.04 2.66
P––– 0.100 ––– 2.54
R0.115 ––– 2.93 –––
V0.135 ––– 3.43 –––
1
CASE 029–04
(TO–226AA)
ISSUE AD
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
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