PNP General Purpose Transistor Features: * * * * Epitaxial planar die construction Complementary NPN type available (MMBT3904) Low Current (Max: -100mA) Low Voltage (Max: -40v) Applications: * Ideal for medium power amplification and switching Maximum Rating @ Ta = 25C unless otherwise specified Parameter Symbol Conditions Min. Max. Collector-Base Voltage VCBO Open Emitter - -40 Collector-Emitter Voltage VCEO Open Base - -40 Emitter-Base Voltage VEBO Open Collector - -6 Collector Current (DC) IC - -100 Peak Collector Current ICM - -200 Peak Base Current IBM - -100 Total Power Dissipation Ptot - 250 Storage Temperature Tstg -65 +150 Junction Temperature Tj - 150 Tamb -65 +150 Operating Ambient Temperature Tamb 25C Units V mA m C Note: Transistor mounted on an FR4 printed-circuit board. Electrical Characteristics @ Ta = 25C unless otherwise specified Parameter Symbol Conditions Min. Max. Collector Cut-Off Current ICBO IE = 0; VCB = -30V - -50 Emitter Cut-Off Current IEBO IC = 0; VEB = 6V - -50 Unit nA www.element14.com www.farnell.com www.newark.com Page <1> 12/09/14 V1.0 PNP General Purpose Transistor Parameter DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Symbol Conditions Min. Max. 60 - 80 - hFE VCE = -1V; IC= -0.1mA IC = -1mA IC = -10mA IC = -50mA IC = -100mA 100 300 60 - 30 - IC = -10mA; IB = 1mA - -200 IC = -50mA; IB = -5mA - -300 IC = -10mA; IB = -1mA - -850 IC = -50mA; IB = -5mA - -950 - 4.5 - 10 250 - MHz - 4 dB VCEsat VBEsat Collector Capacitance Cc Emitter Capacitance Ce Transition Frequency fT Noise Figure NF IE = Ie= 0; VCB = -5V; f = 1MHz IC = Ic= 0; VEB = -500mV; f = 1MHz IC = -10mA; VCE = -20V; f = 100MHz IC = -100A; VCE = -5V; RS = 1k; f = 10Hz to 15.7kHz Unit mV pF Switching Times (between 10% and 90% levels) Turn-On Time ton - 65 Delay Time td - 35 Rise Time tr ICon = -10mA; IBon = -1mA; - 35 Turn-Off Time toff IBoff = -1mA - 300 Storage Time ts - 225 Fall Time tr - 75 ns Note: Pulse test: tp 300 ms; d 0.02. www.element14.com www.farnell.com www.newark.com Page <2> 12/09/14 V1.0 PNP General Purpose Transistor Typical Characteristics @ Ta = 25C unless otherwise specified www.element14.com www.farnell.com www.newark.com Page <3> 12/09/14 V1.0 PNP General Purpose Transistor Plastic Surface Mounted Package: SOT-23 Dim Min Max A 2.85 2.95 B 1.25 1.35 C 1 Typical D 0.37 0.43 E 0.35 0.48 G 1.85 1.95 H 0.02 0.1 J 0.1 Typical K 2.35 2.45 All Dimensions in mm Soldering Footprint: Unit : mm Part Number Table Description Part Number Transistor, Bipolar, PNP, -40V, -100mA, SOT-23 MMBT3906-7-F Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. (c) Premier Farnell plc 2012. www.element14.com www.farnell.com www.newark.com Page <4> 12/09/14 V1.0