tm -30V, -13A, 9m General Description Features This P-Channel MOSFET is producted using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. Max rDS(on) = 9.3m at VGS = -10V, ID = -13A Max rDS(on) = 14.8m at VGS = -4.5V, ID = -11A Extended VGS range (-25V) for battery applications This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. HBM ESD protection level of 6kV typical (note 3) High performance trench technology for extremely low rDS(on) High power and current handing capability RoHS Compliant D D D D SO-8 S S S G 5 4 6 3 7 2 8 1 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID (Note 1a) Units V 25 V -13 -Pulsed A -65 Power Dissipation for Single Operation PD TJ, TSTG Ratings -30 (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) 1.0 Operating and Storage Temperature W -55 to +150 C Thermal Characteristics RJA Thermal Resistance , Junction to Ambient (Note 1a) 50 C/W RJC Thermal Resistance , Junction to Case (Note 1) 25 C/W Package Marking and Ordering Information Device Marking FDS6679AZ Device FDS6679AZ (c)2009 Fairchild Semiconductor Corporation FDS6679AZ Rev. B2 Reel Size 13'' 1 Tape Width 12mm Quantity 2500 units www.fairchildsemi.com FDS6679AZ P-Channel PowerTrench(R) MOSFET March 2009 FDS6679AZ P-Channel PowerTrench(R) MOSFET Symbol Parameter Test Conditions Min -30 Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250A, VGS = 0V BVDSS TJ Breakdown Voltage Temperature Coefficient ID = -250A, referenced to 25C V IDSS Zero Gate Voltage Drain Current VDS = -24V, VGS=0V -1 A IGSS Gate to Source Leakage Current VGS = 25V, VDS=0V 10 A -3 V -20 mV/C On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250A VGS(th) TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250A, referenced to 25C rDS(on) gFS Drain to Source On Resistance Forward Transconductance -1 -1.9 6.5 mV/C VGS = -10V, ID = -13A 7.7 9.3 VGS = -4.5V, ID = -11A 11.8 14.8 VGS = -10V, ID = -13A, TJ = 125C 10.7 13.4 VDS = -5V, ID = -13A m 55 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -15V, VGS = 0V, f = 1MHz 2890 3845 pF 500 665 pF 495 745 pF 13 24 ns 15 27 ns 210 336 ns 92 148 ns 68 96 nC 38 54 nC Switching Characteristics (Note 2) td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain Charge VDD = -15V, ID = -1A VGS = -10V, RGS = 6 VDS = -15V, VGS = -10V, ID = -13A VDS = -15V, VGS = -5V, ID = -13A 10 nC 17 nC Drain-Source Diode Characteristic VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = -2.1A -1.2 V trr Reverse Recovery Time IF = -13A, di/dt = 100A/s -0.7 40 ns Qrr Reverse Recovery Charge IF = -13A, di/dt = 100A/s -31 nC Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50C/W when mounted on a 1 in2 pad of 2 oz copper b)105C/W when mounted on a .04 in2 pad of 2 oz copper c) 125C/W when mounted on a minimun pad Scale 1 : 1 on letter size paper 2: Pulse Test:Pulse Width <300s, Duty Cycle <2.0% 3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. (c)2009 Fairchild Semiconductor Corporation FDS6679AZ Rev. B2 2 www.fairchildsemi.com FDS6679AZ P-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 50 VGS = - 10V VGS = - 5V 40 VGS = - 4.5V 30 VGS = - 4V 20 VGS = - 3.5V 10 0 VGS = - 3V 0 1 2 3 -VDS, DRAIN TO SOURCE VOLTAGE (V) 4 0.5 0.8 -40 0 40 80 120 TJ, JUNCTION TEMPERATURE (oC) 0 10 20 30 40 50 -ID, DRAIN CURRENT(A) 60 70 -IS, REVERSE DRAIN CURRENT (A) 50 40 TJ = 150oC 20 TJ = 25oC TJ = -55oC 2.5 3.0 3.5 4.0 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) 10 TJ = 25oC 10 4.5 6.0 7.5 9.0 -VGS, GATE TO SOURCE VOLTAGE (V) 100 VGS = 0V 10 1 TJ = 150oC TJ = 25oC 0.1 TJ = -55oC 0.01 1E-3 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics (c)2009 Fairchild Semiconductor Corporation FDS6679AZ Rev. B2 TJ = 150oC Figure 4. On-Resistance vs Gate to Source Voltage PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 10 20 0 3.0 160 70 0 2.0 VGS = - 10V DUTY CYCLE = 0.5%MAX 1.0 30 VGS = - 5V 1.0 ID = -13A PULSE DURATION = 80s VGS = -10V Figure 3. Normalized On Resistance vs Junction Temperature -ID, DRAIN CURRENT (A) 1.5 30 1.2 60 VGS = - 4.5V 2.0 ID = -13A 0.6 -80 VGS = - 4V 2.5 1.6 1.4 VGS = - 3.5V 3.0 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage rDS(on), DRAIN TO SOURCE NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 1. On Region Characteristics PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 3.5 ON-RESISTANCE (m) -ID, DRAIN CURRENT (A) 60 4.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 70 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDS6679AZ P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) 10 10000 VDD = -10V 6 VDD = -15V 4 Ciss CAPACITANCE (pF) 8 VDD = -20V Coss 1000 Crss 2 0 f = 1MHz VGS = 0V 0 15 30 45 60 Qg, GATE CHARGE(nC) 100 0.1 75 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage -IAS, AVALANCHE CURRENT(A) 1000 100 -Ig(uA) 10 TJ = 150oC 1 0.1 TJ = 25oC 0.01 1E-3 1E-4 0 5 10 15 20 -VGS(V) 25 30 20 10 TJ = 25oC TJ = 125oC 1 -2 10 35 Figure 9. Ig vs VGS -1 0 1 100 us ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VGS = -10V 10 8 VGS = -4.5V 4 10 1 ms 1 10 ms THIS AREA IS LIMITED BY rDS(on) 50 75 100 125 TA, AMBIENT TEMPERATURE (oC) DC TA = 25 oC 0.1 1 10 100 200 VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Maximum Continuous Drain Current vs Ambient Temperature (c)2009 Fairchild Semiconductor Corporation FDS6679AZ Rev. B2 1s 10 s RJA = 125 oC/W 0.01 0.01 150 100 ms SINGLE PULSE TJ = MAX RATED 0.1 2 0 25 10 100 14 6 2 10 10 10 tAV, TIME IN AVALANCHE(ms) Figure 10. Unclamped Inductive Switching Capability 16 12 30 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 12. Forward Bias Safe Operating Area 4 www.fairchildsemi.com FDS6679AZ P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 4 P(PK), PEAK TRANSIENT POWER (W) 10 VGS = -10 V 3 10 2 10 SINGLE PULSE RJA = 125 oC/W 10 TA = 25 oC 1 0.5 -4 10 -3 -2 10 10 -1 10 1 2 10 3 10 10 t, PULSE WIDTH (sec) Figure 13. Single Pulse Maximum Power Dissipation NORMALIZED THERMAL IMPEDANCE, ZJA 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 -1 10 -2 10 PDM t1 SINGLE PULSE -3 t2 o 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA RJA = 125 C/W -4 10 -4 10 -3 10 -2 10 -1 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Junction-to-Ambient Transient Thermal Response Curve (c)2009 Fairchild Semiconductor Corporation FDS6679AZ Rev. B2 5 www.fairchildsemi.com FDS6679AZ P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) tm Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * FPSTM F-PFSTM Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM TM Saving our world, 1mW /W /kW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOSTM SyncFETTM (R) (R) tm PDP SPMTM Power-SPMTM PowerTrench(R) PowerXSTM The Power Franchise(R) tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM TriFault DetectTM TRUECURRENTTM* SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM XSTM *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I39 (c)2009 Fairchild Semiconductor Corporation FDS6679AZ Rev. B2 6 www.fairchildsemi.com FDS6679AZ P-Channel PowerTrench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.