
Elektronische Bauelemente
S2N7002DW
115mA, 60V
Dual N-Channel MOSFET
19-May-2011 Rev. B Page 2 of 3
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit Teat Conditions
Static
Drain-Source Breakdown Voltage V(BR)DSS 60 - - V VGS=0, ID=10μA
Gate-Threshold Voltage VGS(TH) 1 - 2 V VDS=VGS, ID=250μA
Gate-Source Leakage IGSS - - ±1 μA VDS=0 , VGS= ±20V
TC= 25°C - - 1 VDS=60V, VGS=0
Zero Gate Voltage Drain Current
TC= 125°C
IDSS
- - 500
μA
VDS=60V, VGS=0
On-State Drain Current ID(on) 0.5 - - A VGS=10V, VDS=7.5V
TJ= 25°C - - 7.5 VGS=5V, ID=0.05A
Drain-Source On Resistance
TJ= 125°C
RDS(ON)
- - 13.5
Ω
VGS=10V, ID=0.5A
Forward Transconductance gFS 80 - - ms VDS≧2 VDS(ON), ID= 0.2A
Body-Drain Diode Ratings
Diode Forward On–Voltage VSD - - -1.5 V IS=115mA, VGS=0
Source Current Continuous(Body Diode) IS - - -115 mA
Source Current Pulsed ISM - - -800 mA
Dynamic Characteristics
Input Capacitance CISS - - 50
Output Capacitance COSS - - 25
Reverse Transfer Capacitance CRSS - - 5
pF
VDS=25V,
VGS=0,
f=1MHz
Switching Characteristics
Turn-on Delay Time Td(ON) - - 20
Turn-off Delay Time Td(OFF) - - 40
nS
VDD=25V, I D=0.5A
RL=50Ω,
VGEN=10V, RG=25Ω