2SD2122(L)/(S), 2SD2123(L)/(S)
Silicon NPN Epitaxial
Application
Low frequency power amplifier complementary pair with 2SB1409(L)/(S)
Outline
4
123
4
3
2
11. Base
2. Collector
3. Emitter
4. Collector
DPAK
S Type
L Type
2SD2122(L)/(S), 2SD2123(L)/(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item Symbol 2SD2122(L)/(S) 2SD2123(L)/(S) Unit
Collector to base voltage VCBO 180 180 V
Collector to emitter voltage VCEO 120 160 V
Emitter to base voltage VEBO 55V
Collector current IC1.5 1.5 A
Collector peak current IC(peak) 33A
Collector power dissipation PC*118 18 W
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C
Note: 1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
2SD2122(L)/(S) 2SD2123(L)/(S)
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage V(BR)CBO 180 — — 180 — — V IC = 1 mA, IE = 0
Collector to emitter
breakdown voltage V(BR)CEO 120 — — 160 — — V IC = 10 mA, RBE = ∞
Emitter to base
breakdown voltage V(BR)EBO 5 ——5 ——V I
E
= 1 mA, IC = 0
Collector cutoff current ICBO ——10——10µAV
CB = 160 V, IE = 0
DC current transfer
ratio hFE1*260 — 200 60 — 200 A VCE = 5 V, IC = 150 mA*1
hFE2 30 — — 30 — — VCE = 5 V, IC = 500 mA*1
Collector to emitter
saturation voltage VCE(sat) ——1 ——1 V I
C
= 500 mA,
IB = 50 mA*1
Base to emitter voltage VBE — — 1.5 — — 1.5 V VCE = 5 V, IC = 150 mA*1
Gain bandwidth product fT— 180 — — 180 — MHz VCE = 5 V, IC = 150 mA*1
Collector output
capacitance Cob —14——14—pFV
CB = 10 V, IE = 0,
f = 1 MHz
Notes: 1. Pulse test
2. The 2SD2122(L)/(S) and 2SD2123(L)/(S) are grouped by hFE1 as follows.
BC
60 to 120 100 to 200
2SD2122(L)/(S), 2SD2123(L)/(S)
3
0Case temperature TC (°C)
Collector power dissipation Pc (W)
Maximum Collector Dissipation Curve
50 100 150
10
30
20
0.01
0.03
0.1
0.3
1.0
3.0
10
Collector to emitter voltage VCE (V)
Collector current IC (A)
3 10 30 100 300
Area of Safe Operation
IC (max)
DC Operation
(T
C
= 25°C)
2SD2123
2SD2122
Collector to emitter voltage VCE (V)
Collector current IC (A)
0
Typical Output Characteristics
10 20 30 40 50
0.2
0.6
0.8
1.0
0.4
IB = 0
P
C
= 18 W
TC = 25°C
1 mA
2
3
4
5
6
7
8
9
10
10
30
100
300
1,000
Collector current IC (A)
DC current transfer ratio hFE
0.03 0.1 0.3 1.0 3.0
DC Current Transfer Ratio
vs. Collector Current
VCE = 5 V
Ta = 25°C
2SD2122(L)/(S), 2SD2123(L)/(S)
4
0.01
0.03
0.1
0.3
1.0
Collector current IC (A)
Collector to emitter saturation voltage VCE (sat) (V)
0.03 0.1 0.3 1.0 3.0
Saturation Voltage vs. Collector Current
Ta = 25°C
lC = 10 lB
0.1
0.3
1.0
3.0
10
Collector current IC (A)
Base to emitter saturation voltage VBE (sat) (V)
0.03 0.1 0.3 1.0 3.0
Saturation Voltage vs. Collector Current
Ta = 25°C
lC = 10 lB
Base to emitter voltage VBE (V)
Collector current IC (A)
0
Typical Transfer Characteristics
0.4 0.8 1.2 2.01.6
0.4
0.8
1.2
1.6
2.0
VCE = 5 V
Ta = 25°C
2SD2122(L)/(S), 2SD2123(L)/(S)
5
10
30
100
300
1,000
Collector current IC (A)
Gain bandwidth product fT (MHz)
0.01 0.03 0.1 0.3 1.0
Gain Bandwidth Product
vs. Collector Current
VCE = 5 V
Ta = 25°C
1
3
10
30
100
Collector to base voltage VCB (V)
Collector output capacitance Cob (pF)
1 3 10 30 100
Collector Output Capacitance
vs. Collector to Base Voltage
f = 1 MHz
IE = 0
Ta = 25°C
2SD2122(L)/(S), 2SD2123(L)/(S)
6
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part
of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party
or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan
Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109
For further information write to:
Hitachi America, Ltd.
Semiconductor & IC Div.
2000 Sierra Point Parkway
Brisbane, CA. 94005-1835
U S A
Tel: 415-589-8300
Fax: 415-583-4207
Hitachi Europe GmbH
Electronic Components Group
Continental Europe
Dornacher Straße 3
D-85622 Feldkirchen
München
Tel: 089-9 91 80-0
Fax: 089-9 29 30 00
Hitachi Europe Ltd.
Electronic Components Div.
Northern Europe Headquarters
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA
United Kingdom
Tel: 0628-585000
Fax: 0628-778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 0104
Tel: 535-2100
Fax: 535-1533
Hitachi Asia (Hong Kong) Ltd.
Unit 706, North Tower,
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon
Hong Kong
Tel: 27359218
Fax: 27306071
