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©2014 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
RHRG5060_F085 Rev. C1
RHRG5060_F085 50A, 600V Hyperfast Rectifier
July 2014
Pin Assignments
1. Cathode 2. Anode
TO-247-2L
1
1. Cathode 2. Anode
2
RHRG5060_F085
50A, 600V Hyperfast Rectifier
Features
• High Speed Switching ( trr=45ns(Typ.) @ IF=50A )
• Low Forward Voltage( VF=1.67V(Typ.) @ IF=50A )
• Avalanche Energy Rated
• AEC-Q101 Qualified
Applications
• Switching Power Supply
• Power Switching Circuits
• General Purpose
• Automotive and General Purpose
Max Ratings (600V, 50A)
The RHRG5060_F085 is an Hyperfast™ diode with soft
recovery characteristics (trr < 45ns). It has half the
recovery time of ultrafast diode and is of silicon nitride
passivated ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamp-
ing diode and rectifier in a variety of automotive switch-
ing power supplies and other power switching
automotive applications. Its low stored charge and
hyperfast soft recovery minimize ringing and electrical
noise in many power switching circuits, thus reducing
power loss in the switching transistors.
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Thermal Characteristics TC = 25°C unless otherwise noted
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VRRM Peak Repetitive Reverse Voltage 600 V
VRWM Working Peak Reverse Voltage 600 V
VRDC Blocking Voltage 600 V
IF(AV) Average Rectified Forward Current @ TC = 25°C50A
IFSM Non-repetitive Peak Surge Current (Halfwave 1 Phase 50Hz) 150 A
EAVL Avalanche Energy (1.4A, 40mH) 40 mJ
TJ, TSTG Operating Junction and Storage Temperature - 55 to +175 °C
Symbol Parameter Max Units
RθJC Maximum Thermal Resistance, Junction to Case 0.42 °C/W
RθJA Maximum Thermal Resistance, Junction to Ambient 45 °C/W
Device Marking Device Package Tube Quantity
RHRG5060 RHRG5060_F085 TO-247 - 30
2www.fairchildsemi.com
RHRG5060_F085 Rev. C1
RHRG5060_F085 50A, 600V Hyperfast Rectifier
Electrical Characteristics TC = 25°C unless otherwise noted
Notes:
1. Pulse : Test Pulse width = 300μs, Duty Cycle = 2%
2. Guaranteed by design
Test Circuit and Waveforms
Symbol Parameter Conditions Min. Typ. Max Units
IRInstantaneous Reverse Current VR = 600V TC = 25 °C - - 250 uA
TC = 175 °C- - 1.5mA
VFM1Instantaneous Forward Voltage IF = 50A TC = 25 °C
TC = 175 °C
-
-
1.67
1.29
2.1
1.7
V
V
trr2Reverse Recovery Time IF =1A, di/dt = 100A/μs,
VCC= 390V
TC = 25 °C - 37 45 ns
IF =50A, di/dt = 100A/μs,
VCC= 390V
TC = 25 °C
TC = 175 °C
-
-
45
200
60
-
ns
ns
ta
tb
Qrr
Reverse Recovery Time
Reverse Recovery Charge
IF =50A, di/dt = 100A/μs,
VCC= 390V
TC = 25 °C-
-
-
25
20
45
-
-
-
ns
ns
nC
3www.fairchildsemi.com
RHRG5060_F085 Rev. C1
RHRG5060_F085 50A, 600V Hyperfast Rectifier
Typical Performance Characteristics
Figure 1. Typical Forward Voltage Drop
vs. Forward Current
Figure 2. Typical Reverse Current vs.
Reverse Voltage
Figure 3.Typical Junction Capacitance Figure 4. Typical Reverse Recovery Time
vs. di/dt
Figure 5. Typical Reverse Recovery
Current vs. di/dt
Figure 6. Forward Current Derating Curve
0.1 0.5 1.0 1.5 2.0 2.5
0.1
1
10
100
TC
= 125oC
TC = 175oC
Forward Current, IF [A]
Forward Voltage, VF
[V]
TC
= 25oC
250
100 200 300 400 50 0 600
1E-4
1E-3
0.01
0.1
1
10
100
1000
TC = 175oC
TC = 25oC
TC = 125oC
Reverse Current , IR [μA]
Revers e Voltage, VR [V]
0.1 1 10 100
0
100
200
300
400
500
Capacitances , C j [pF]
Typical Capacitance
at 10V = 154pF
Revers e Voltage, V R [V]
100 200 300 400 500
0
50
100
150
200
TC = 175oC
IF = 50A
TC = 25oC
TC = 125oC
Reverse Recovery Time, trr [ns]
di/dt [A/μs]
100 200 3 00 400 500
0
5
10
15
20
25
30
TC
= 125oC
IF = 50A
TC = 25oC
TC = 175oC
Reverse Recovery Current, Irr
[A]
di/dt [A/μs]
25 50 75 100 1 25 150 1 75
0
50
100
150
200
Average Forward Current, IF(AV)
[A]
Case temperature, TC [ oC]
4www.fairchildsemi.com
RHRG5060_F085 Rev. C1
RHRG5060_F085 50A, 600V Hyperfast Rectifier
Typical Performance Characteristics (Continued)
Figure 7. Reverse Recovery Charge
Figure 8. Transient Thermal Response Curve
100 200 300 400 50 0
0
600
1200
1800
TC = 175oC
IF = 50A
TC
= 25oC
TC = 1 25 oC
Reverse Recovery Charge, Qrr
[nC]
di/dt [A/μs]
10-5 10-4 10-3 10-2 10-1 100101102
0.01
0.1
1
* Notes :
1. ZthJC(t) = 0.42 oC/W Typ.
2. Duty Factor , D =t1/t2
3. TJM - TC = PDM * ZthJC(t)
singl e pulse
D=0.5
0. 02
0.2
0.05
0.1
0.01
ZthJ C(t), Thermal Response
t1, Square Wave Pulse Duration [sec]
t
1
P
DM
t
2
5www.fairchildsemi.com
RHRG5060_F085 Rev. C1
RHRG5060_F085 50A, 600V Hyperfast Rectifier
Mechanical Dimensions
Dimensions in Millimeters
TO-247-2L
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仙童 ™
®
™
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Rev. I68
tm
®
RHRG5060_F085 50A, 600V Hyperfast Rectifier
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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