SST6838 Transistors NPN general purpose transistor SST6838 zFeatures zExternal dimensions (Unit : mm) 1) BVCEO minimum is 40V (IC = 1mA) 2) Complements the SST6839. SST6838 2.90.2 0.95 +0.2 -0.1 1.90.2 0.450.1 0.95 0.95 SST6838 Pacaging type SST3 RBR Marking (1) 0~0.1 0.2Min. (3) All terminals have the same dimensions +0.1 0.15 -0.06 0.4 +0.1 -0.05 T116 Code Basic ordering unit (pieces) (2) 0.2 1.3+ -0.1 Part No. 2.40.2 zPackage, marking and packaging specifications 3000 ROHM : SST3 (1) Emitter (2) Base (3) Collector zAbsolute maximum ratings (Ta=25C) Symbol Limits Unit Collector-base voltage Collector-emitter voltage VCBO VCEO 50 40 V V Emitter-base voltage Collector current VEBO IC 5 0.2 V A Collector power dissipation Junction temperature Storage temperature PC Tj Tstg 0.2 150 -55 to +150 W C Parameter C zElectrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Symbol Min. Typ. Max. Unit BVCBO BVCEO 50 40 - - - - V V - - 0.5 - - 5 - - 0.5 - - 5 - - 0.4 - - 0.5 - - 0.7 ICBO IEBO VCE(sat) A A Conditions IC=10A IC=1mA VCB=30V (Ta= -40C to +125C) (Ta= -40C to +125C) (Ta=85C) VCB=30V (Ta=125C) (Ta=85C) VEB=4V VEB=4V V IC/IB=10mA/0.2mA - IC/IB=10mA/0.2mA VCE/IC=5V/1mA VCE/IC=5V/1mA DC current transfer ratio hFE1 200 - - - - 800 - - 1000 DC current transfer ratio hFE2 150 - - - VCE/IC=5V/1mA VCE/IC=5V/10mA fT 50 180 - MHz Collector output capacitance Cob - 2 3.5 pF VCE=12V , IC=2mA , f=100MHz VCB=12V , f=1MHz Emitter input capacitance Cib - 17 - pF VEB=0.5V , f=1MHz Transition frequency (Ta=125C) (Ta=25C) (Ta=85C) (Ta=125C) IC/IB=50mA/5mA (Ta= -40C to +25C) (Ta=85C) (Ta=125C) (Ta= -40C to +25C) (Ta=25C) (Ta=25C) (Ta=25C) Rev.A 1/3 SST6838 Transistors zElectrical characteristic curves COLLECTOR CURRENT : IC (mA) 1 0.5 0.2 Fig.1 0.15mA 40 0.10mA 20 0.05mA IB=0A 0 0.4 0.8 1.2 1.6 2.0 Fig.2 Grounded emitter propagation characteristics 500 VCE=5V 3V 1V 200 100 50 20 0.5 1 2 5 10 20 50 20 0.5 1 2 5 10 20 VCE=5V 50 100 200 COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( ) Fig.5 DC current gain vs. collector current ( ) IC/IB=10 0.2 Ta=100C 25C -55C 0.05 0.02 0.01 0.2 -55C 100 COLLECTOR CURRENT : IC (mA) 0.5 0.1 25C 10 0.2 50 100 200 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 10 0.2 Ta=100C 200 0.5 0.2 21A 6 Ta=100C 25C -55C 0.05 0.02 0.01 2 5 10 20 18A 15A 12A 4 9A 6A 2 3A 4 IB=0A 12 8 16 20 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 Grounded emitter output characteristics ( ) 0.5 Ta=25C 0.2 IC/IB=50 20 10 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 Fig. 6 Collector-emitter saturation voltage vs. collector current IC/IB=50 0.5 1 24A COLLECTOR CURRENT : IC (mA) 0.1 0.2 27A 8 Grounded emitter output characteristics ( ) Ta=25C 30A Ta=25C 0 0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE 0.20mA 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 0.25mA 60 0 0.1 0 500 0.30mA COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 2 25C -55C 5 80 10 50 100 COLLECTOR CURRENT : IC (mA) Fig.8 Collector-emitter saturation voltage vs. collector current () TRANSITION FREQUENCY : fT (MHz) 10 Ta=100C COLLECTOR CURRENT : IC (mA) 20 0.50mA mA 0.45 A 0.40m 0.35mA Ta=25C VCE=6V COLLECTOR CURRENT : IC (mA) 100 50 Ta=25C VCE=6V 500 200 100 50 -0.5 -1 -2 -5 -10 -20 -50 -100 EMITTER CURRENT : IE (mA) Fig.9 Gain bandwidth product vs. emitter current Rev.A 2/3 SST6838 20 10 Ta=25C f=1MHz IE=0A IC=0A Cib 5 2 Co b 1 0.2 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.10 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage BASE COLLECTOR TIME CONSTANT : Cc*rbb' (ps) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) Transistors Ta=25C f=32MHZ VCB=6V 200 100 50 20 10 -0.2 -0.5 -1 -2 -5 -10 EMITTER CURRENT : IE (mA) Fig.11 Base-collector time constant vs. emitter current Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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