PZTA42S62Z - Fairchild Semiconductor Corporation

MPSA42 / MMBTA42 / PZTA42

NPN High Voltage Amplifier

This device is designed for application as a video output to

drive color CRT and other high voltage applications. Sourced

from Process 48.

MMBTA42MPSA42

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Symbol Parameter Value Units

VCES Collector-Emitter Vo ltage 300 V

VCBO Collector-Base Voltage 300 V

VEBO Em it ter - Bas e V oltage 6 . 0 V

ICC ollector Curr ent - Continuous 200 mA

TJ, T stg Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

MPSA42 *MMBTA42 **PZTA42

PDTo ta l De vice Dissip at i on

Derate above 25°C625

5.0 350

2.8 1,000

8.0 mW

mW/°C

RθJC Thermal Resistance, Junction to Case 83.3 °C/W

RθJA Thermal Resistance, Junction to Ambient 200 357 125 °C/W

PZTA42

CBETO-92

SOT-23

Mark: 1D

SOT-223

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.

Discrete POWER & Signal

Technologies

 1997 Fairchild Semiconductor Corporation

MPSA42 / MMBTA42 / PZTA42

Electrical Characteristics TA = 25°C unless otherwise noted

OFF CHARACTERISTICS

Symbol Parameter Test Condition s Min Max Un its

V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 m A , I B = 0 300 V

V(BR)CBO Col lec t or -B ase Breakd ow n Volt ag e IC = 1 00 µA, IE = 0 300 V

V(BR)EBO Em it ter - Bas e B r e akdown Voltage IE = 1 00 µA, I C = 0 6.0 V

ICBO Collector-Cutoff Current VCB = 2 00 V, IE = 0 0.1 µA

IEBO Em it ter - Cutoff Current VEB = 6.0 V, IC = 0 0.1 µA

SMALL SIGNAL CHARACTERISTICS

ON CHARACTERISTICS*

hFE DC Cu r rent G ain IC = 1.0 m A, VCE = 1 0 V

IC = 1 0 mA, VCE = 1 0 V

IC = 3 0 mA, VCE = 1 0 V

VCE(sat)Co l lector-E mitter Sa turation Vo ltage IC = 20 mA, IB = 2.0 mA 0.5 V

VBE(sat)Base-Emitter Satur ation Voltage IC = 2 0 mA, IB = 2.0 mA 0.9 V

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Spice Model

NPN (Is=34.9f Xti=3 Eg=1.11 Vaf=100 Bf=2.65K Ne=1.708 Ise=16.32p Ikf=23.79m Xtb=1.5 Br=9.769 Nc=2

Isc=0 Ikr=0 Rc=7 Cjc=14.23p Mjc=.5489 Vjc=.75 Fc=.5 Cje=49.62p Mje=.4136 Vje=.75 Tr=934.3p Tf=1.69n

Itf=5 Vtf=20 Xtf=150 Rb=10)

fTCurre nt Ga in - Ba ndwidth Product IC = 10 mA, VCE = 2 0 V,

f = 100 MH z 50 MHz

Ccb Collector-Base Capacitance VCB = 2 0 V, IE = 0, f = 1.0 MHz 3.0 pF

NPN High Voltage Amplifier

(continued)

Typical Characteristics

DC Cu rren t Gain

vs Collect or Current

P48

0.1 1 10 100

100

120

140

I - COLLECTOR CURRENT (mA)

h - DC CURRENT GAIN

- 40 ºC

25 ° C

V = 5 V

125 °C

Collector-Emitter Saturation

Voltage vs Col lector Current

P48

0.1 1 10 100

0.05

0.1

0.15

0.2

0.25

0.3

I - COL L ECT OR CURR ENT (mA)

V - C OLLEC TOR-E MITTER V OLTAGE (V)

CESAT

ββ= 10

- 40 ºC

25 °C

125 °C

MPSA42 / MMBTA42 / PZTA42

NPN High Voltage Amplifier

(continued)

Typical Characteristics (continued)

Ba se-Emitt e r S a tu ration

Vo ltage v s Colle ctor Current

P48

0.1 1 10 100

0.2

0.4

0.6

0.8

I - COLLECTOR CURRENT (mA)

V - BASE-EM IT TER VOLTAGE (V)

BESAT

ββ= 10

- 40 ºC

25 °C

125 °C

Base-Emitter ON Voltage v s

Collect o r Curre nt

P48

0.1 1 10 100

0.2

0.4

0.6

0.8

I - CO LLECTOR CURRENT (mA)

V - BASE-EMITTER ON VOLTAGE (V)

BE(ON)

V = 1V

- 40 ºC

25 °C

125 °C

Collecto r -C ut o ff C ur re n t

vs Am b ient Te m per atu re

P48

25 50 75 100 125 150

100

T - AMBIENT TEMPERATU RE ( C)

I - CO L L EC TOR CURRE NT (nA)

V = 150V

CBO

Collector -Bas e and Emit ter-B ase

Capacitance vs Reverse Bias Voltage

1 10 100 1000

100

REVERSE BIAS VOLTAG E (V)

CAPACI TANCE (pF)

Ccb

T = 25 °C

Power Dissipation vs

Ambient Temperature

0 25 50 75 100 125 150

0.25

0.5

0.75

TEMP ERATURE ( C)

P - POWER D ISSIPATION (W )

SOT-223

TO-92

SOT-23