MICROSEMI CORP SSE D) MM 6115865 0001883 325 me MSC 1N5221 thru 1N5281 DO-7 FEATURES 2.4 THRU 200 VOLTS e COMPACT PACKAGE MAXIMUM RATINGS Operating and Storage Temperature: 65C to +200C DC Power Dissipation: 500 mW Power Derating: 4.0 mW/C above 75C Forward Voltage @ 200 mA: 1.1 Volts : ELECTRICAL CHARACTERISTICS See following page for table of parameter values. (Fig. 3) Table as shown on following page (Fig. 3) lists JEDEC type numbers, which indicate a tolerance of + 20% with guaranteed limits on only Vz, Ir, and Vf. Devices with guaranteed limits on all six parameters are indicated by suffix A for + 10%toleranceand suffix: B for +5% tolerance. Also available with suffix C or D which indicates 2% and 1% tolerance respectively. 400 \ 300 Pg, RATED POWER DISSIPATION (mW) +25 +50 +75 +100 +125 +150 +175 +200 T, LEAD TEMPERATURE AT 36 FROM BODY FIGURE 2 POWER DERATING CURVEMICROSEMI CORP 88 STE D Mm 6115865 00018845 ebl MNSC 1N5221 thru 1N5281 DO-7 *ELECTRICAL CHARACTERISTICS @ 25C Max eeuteaay Max Reverse Leakage Current ; JEDEC Nominal Test Note 2 A, 8, C & D Suffix Only Non-Suffix Max Zener Voltage Type No. Zener Voltage Current I @ ve 1 @. Used a Temp. poett 1) Note t Vz @ | = 0.25 mA 1 se uffix Only) Volts ma | A@ be | tu @ ly = 0.25 m uA Volts For Suttix A Beyst% C) A 8,C&0 A Note 3 1N5221 2.4 20 30 1200 100 0.95 1.0 200 0.085 1N5222 25 20 30 1250 100 0.95 1.0 200 0.085 1N5223 a7 20 30 1300 5 0.95 1.0 150 0.080 1N5224 2.8 20 30 1400 75 0.95 1.0 150 0.080 1N5225 3.0 20 29 1600 50 0.95 1.0 100 0.075 1N5226 3.3 20 28 1600 25 0.95 10 100 0.070 1N5227 3.6 20 24 1700 15 0.95 10 100 0.065 1N5228 3.9 20 23 1900 10 0.95 1.0 75 0.060 1N5229 43 20 22 2000 5.0 0.95 1.0 50 0,055 1N5230 4? 20 19 1900 $.0 19 2.0 50 +0.030 1N5231 5.1 20 V7 1600 5.0 1.9 2.0 50 + 0.030 1N5232 56 20 11 1600 5.0 2.9 3.0 50 +0.038 1N5233 6.0 20 70 1600 5.0 3.3 3.5 50 +0.038 1N5234 6.2 20 7.0 1000 5.0 3.8 4.0 50 +0.045 1N5235 6.8 20 5.0 750 3.0 48 5.0 30 +0.050 1N5236 75 20 6.0 500 3.0 57 6.0 30 +0.053 1N5237 82 20 8.0 500 3.0 6.2 6.5 30 +0.062 1N5238 87 20 8.0 600 3.0 6.2 65 30 +0.065 1N5239 9.1 20 0 600 3.0 67 7.0 30 +0.068 1N5240 10 20 17 600 3.0 7.6 8.0 30 +0.075 1N5241 an 20 22 600 2.0 8.0 8.4 30 +0.076 1N5242 12 20 30 600 10 | 87 | 91 10 +0.077 4 1N5243 13 95 13 600 05 94 9.9 10 +0.079 1N5244 14 5.0 5 600 0.1 95 10 10 +0.082 1N5245 18 85 16 600 01 10.5 li 10 +0,082 IN5246 16 78 ? 600 0.1 114 12 10 +0.083 1N5247 V7 74 19 600 01 12.4 13 10 +0.084 1N5248 18 7.0 21 600 01 13.3 4 10 +0.085 1N5249 19 66 23 600 01 13.3 14 10 +0.086 1N5250 20 62 25 600 0.1 143 15 10 +0.086 1N5251 22 5.6 29 600 01 16.2 V7 10 +0.087 1N5252 24 5.2 33 600 01 17.1 18 10 +0.088 1N5253 25 5.0 35 600 01 18.1 19 10 +0.089 1N5254 27 46 4l 600 0.1 20 21 10 +0.090 1N5255 28 4s 44 600 Ol 20 2l 10 +0.091 1N5256 30 42 49 600 01 22 23 10 +0091 1N5257 33 38 58 700 Q1 24 25 10 +0,092 1N5258 36 34 70 700 0.1 26 27 id +0.093 1N5259 39 3.2 80 800 01 29 30 10 +0.094 1N5260 43 3.0 93 900 0.1 31 33 10 +0.095 1N5261 47 27 105 1000 OL 34 36 10 +0.095 1N5262 1 25 125 1100 OL 37 39 10 +0.096 1N5263 56 22 150 1300 01 4) 43 10 +0.096 1N5264 60 2.1 170 1400 OL 44 46 10 +0.097 1N5265 62 2.0 185 1400 01 45 47 10 +0.097 1N5266 68 13 230 1600 0.1 49 52 10 +0.097 1N5267 75 1? 270 1700 0.1 53 56 10 +0.098 IN5268 82 15 330 2000 0.1 $9 62 10 +0.098 1N5269 87 14 370 2200 0.1 65 68 10 +0.099 1N5270 91 14 400 2300 01 66 69 10 +0.099 1N5271 100 13 500 2600 al 72 76 10 +0.110 1N5272 110 ll 750 3000 0.1 80 84 10 +0.110 1N5273 120 10 900 4000 0.1 86 9) 10 40.110 1N5274 130 0.95 1100 4500 Ol 94 99 10 +0.110 1N5275 140 0.90 1300 4500 0.1 101 106 10 +0110 1N5276 150 0.85 1500 5000 0.1 108 114 10 +0110 1N5277 160 0.80 1700 $500 0.1 116 122 10 +0.110 1N5278 170 0.74 1900 5800 0.1 123 129 10 +0.110 1N5279 180 0.68 2200 6000 0.1 130 137 10 +0.110 1N5280 190 0.66 2400 6500 0.1 137 144 10 +0.110 1N5281 200 0.65 2500 7000 0.1 144 152 10 +0110 FIGURE 3 *JEDEC registered data NOTE 1 The electrical characteristics are measured after allowing the device to stabilize for 20 seconds when mounted with a % minimum lead length from the case. NOTE 2 The zener impedance is derived from the 60 HZ ac voltage, which results when an ac current having an r.m.s. value equal to 10% of the DC zener current (I;7 or Iyx) is superimposed on Izy or Izx. Zener impedance is measured at two points to insure a sharp knee on the breakdown curve, thereby elimi- nating unstable units. NOTE 3 Temperature coefficient (yz). Test conditions for temperature coefficient are as follows: a, Liv = 7.5 mA, Ti = 25C, T, = 125C (1N5221A, B thru 1N5242A, B.) b. Ine = Rated Ip7, T, = 25C, Ts = 125C (1N5243A, B thru 1N5281A, B.) Device to be temperature stabilized with current applied prior to reading breakdown voltage at the specified ambient temperature.MICROSEMI CORP SSE D M@@ 6115865 n0018a5 1T&5 MMSE 1N5221 thru 1N5281 DO-7 g 8 2388 8 Typical Capacitance in pF zero volts 40 At -2 volts 10 0 2 40 60 8 0 120 140 160 180 200 Zener Voltage FIGURE 4 CAPACITANCE VS. ZENER VOLTAGE (TYPICAL)S9 D MM 6115465 0001884 034 MMSE 1N5221 thru 1N5281 DO-35 MICROSEMI CORP - SANTAAN FEATURES 2.4 THRU 200 VOLTS COMPACT PACKAGE CONSULT FACTORY FOR VOLTAGES ABOVE 200 V MAXIMUM RATINGS Operating and Storage Temperature: -65C to +200C DC Power Dissipation: 500 mW Power Derating: 4.0 mW/C above 75C Forward Voltage & 200 mA: I.I Volts ELECTRICAL CHARACTERISTICS See following page for table of parameter values. (Fig. 3) Table as shown on following page (Fig. 3) lists JEDEC type numbers, which indicate a tolerance of + 20% with guaranteed limits on only Vz, Ir, and Vf. Devices with guaranteed limits on all six parameters are indicated by suffix A for+ 10%toleranceand suffix B for +5% tolerance. Also available with suffix C or D which indicates 2% and 1% tolerance respectively. 500 400 300 200 100 Pg, RATED POWER DISSIPATION (mW) 0 +25 +50 +75 +100 +125 +150 4175 +200 T, LEAD TEMPERATURE AT % FROM BODY FIGURE 2 POWER DERATING CURVEfiat MICROSEMI CORP 1N5221 thru 1N5281 DO-35 STE D *ELECTRICAL CHARACTERISTICS @ 25C *JEDEC registered data NOTE 1 The electrical characteristics are measured after allowing the device to stabilize for 20 seconds when mounted with a % minimum lead length from the case. NOTE 2 The zener impedance is derived from the 60 HZ ac voltage, which results when an ac current having an r.m.s. value equal to 10% of the DC zener current (I,7 or Iyx) is superimposed on Iyr or Inn. Zener impedance is measured at two points to insure a sharp knee on the breakdown curve, thereby, elimi- nating unstable units. Max Zener Impedance ARB Sufix Only Max Reverse Leakage Current JEOEC Nominal Test Note 2 A, B.C & D Sufix Only Non-Suttix Max Zener Voltage Type No. ee Current k @ Temp. Coeff. te 1 2 @ Iz zr In @ her Zee @ bee = 0.25 mA HW fl, @, Used (A & B Suffix Only) Voits mA ne l= ah Volts For Suffix A Cial% C) A B.t&D uA Note 3 1N5221 24 20 30 1200 100 0.95 1.0 200 0.085 1N5222 2.5 20 30 1250 100 0.95 1.0 200 0.085 1N5223 27 20 30 1300 75 0.95 1.0 150 0.080 1N5224 28 20 30 1400 78 0.95 10 150 0.08 1N5225 3.0 20 29 1600 50 0.95 10 100 0.075 1N5226 3.3 20 28 1600 25 0.95 10 100 0.070 1N5227 3.6 20 24 1700 ig 0.95 1.0 100 0.065 1N5228 39 20 23 1900 10 0.95 1.0 75 0.060 1N5229 43 20 22 2000 5.0 0.95 1.0 50 +0.055 1N5230 47 20 19 1900 5.0 1.9 2.0 50 +0.030 1N5231 5.1 20 VW 1600 5.0 19 2.0 50 + 0.030 1N5232 56 20 i 1600 5.0 23 3.0 50 +0.038 1N5233 6.0 20 7.0 1600 5.0 3.3 35 50 +0.038 1N5234 6.2 20 7.0 1000 5.0 3.8 40 50 +0.045 1N5235 68 20 5.0 750 3.0 48 5.0 30 +0,050 1N5236 75 20 6.0 500 3.0 5.7 6.0 30 +0.058 1N5237 8.2 20 8.0 500 3.0 6.2 65 30 +0.062 1N5238 87 20 8.0 600 3.0 6.2 55 30 +0.065 1N5239 9.1 20 10 600 3.0 67 7.0 30 +0,068 1N5240 10 20 17 600 3.0 76 8.0 30 +0.075 1N5241 1 20 22 600 2.0 8.0 8.4 30 +0.076 1N5242 12 20 30 600 1.0 8.7 91 10 +0.077 1N5243 13 9.5 13 600 0.5 9.4 99 10 +0.079 1N5244 14 9.0 15 600 0.1 9.5 10 10 +0.082 1N5245 15 85 16 600 01 10.5 i 10 +0.082 1N5246 16 78 7 600 0.1 11.4 12 10 +0.083 1N5247 17 74 19 600 a1 12.4 13 10 +0.084 1N5248 18 7. ral 600 01 13.3 14 10 +0.085 1N5249 19 6.6 23 600 0.2 133 14 10 +0.086 1N5250 20 62 25 600 al 14.3 15 10 +0.086 1N5251 22 5.6 29 600 Ol 16.2 7 10 +0,087 1N5252 24 5.2 33 600 0.1 V1 18 10 +0.088 1N5253 25 5.0 35 600 01 18.1 19 10 +0.089 1N5254 27 46 4] 600 01 20 21 10 +0,090 1N5255 23 45 44 600 01 20 al 10 +0.091 1N5256 30 42 49 600 Q1 22 23 10 +0.091 1N5257 33 38 58 700 0.1 24 25 10 +0,092 1N5258 36 a4 70 700 0.1 26 27 10 +0.093 1N5259 39 3.2 80 800 01 29 30 10 +0.094 1N5260 43 3.0 93 900 o1 31 33 10 +0.095 1N5261 4? 27 105 1000 01 34 36 10 +0.095 1N5262 51 25 125 1100 0.1 37 39 10 +0.096 1N5263 56 2.2 150 1300 Ol Al 43 10 40.096 1N5264 60 2.1 170 1400 0.1 44 46 10 +0.097 1N5265 62 2.0 185 1400 0.1 45 47 10 +0.097 1N5266 68 18 230 1600 01 49 52 10 +0.097 1N5267 15 1? 270 1700 01 53 56 10 +0.098 1N5268 82 15 330 2000 01 39 62 10 +0.098 1N5269 87 14 370 2200 Ol 65 68 10 +0.099 1N5270 91 14 400 2300 01 66 69 10 +0.099 1N5271 100 1.3 500 2600 Ol 72 76 10 +0.110 1N5272 110 tt 750 3000 0.1 80 84 10 +0.110 1N5273 120 1.0 300 4000 0.1 86 91 10 +0.110 1N5274 130 0.95 1100 4500 01 94 99 10 +0.110 1N5275 140 0.90 1300 4500 0.1 101 106 10 +0.110 1N5276 150 0.85 1500 5000 0.1 108 114 10 +0.110 1N5277 160 0.80 1700 5500 0. 116 122 10 +0.110 1N5278 170 074 1900 5500 01 123 129 10 +0.110 1N5279 180 0.68 2200 6000 0.1 130 137 10 +0.110 1N5280 190 0.66 2400 6500 0.1 137 144 10 +0.110 1N5281 200 0.65 2500 7000 0.1 144 152 10 +0.110 FIGURE 3 NOTE 3 Temperature coefficient (yz). Test conditions for temperature coefficient are as follows: a. Ivy = 7.5 mA, Ti = 25C, Ty = 125C (1N5221A, B thru 1N5242A, B.) b. Iyr = Rated Iyr, T, = 25C, T, = 125C (1N5243A, B thru 1N5281A, B.) Device to be temperature stabilized with current applied prior to reading breakdown voltage at the specified ambient temperature. Mm 115865 000184? TPO MBNSC 91MICROSEMI CORP S3E D WH 61158645 00018848 407 MeMsc 1N5221 thru 1N5281 DO-35 CAPACITANCE vs. Vz CURVE aoa ooc 30 a a < < iw Q g a z ww o z E S : Go g e 0 20 40 60 80) 100 120140 160180) 200 220 ZENER VOLTAGE Vz FIGURE 4 CAPACITANCE VS. ZENER VOLTAGE (TYPICAL) 92