Continental Device India Limited Data Sheet Page 1 of 6
2N4400, 2N4401
2N4402, 2N4403
ABSOLUTE MAXIMM RATINGS
Rating Symbol 2N4400/01 2N4402/03 Units
Collector-Emitter Voltage VCEO 40 40 V
Collector-Base Voltage VCBO 60 40 V
Emitter-Base Voltage VEBO 65V
Collector Current Continuous IC- 600 - mA
Power Dissipation At Ta=25 ºC PD- 625 - mW
Derate Above 25 ºC - 5.0 - mW/ºC
Power Dissipation At Tc=25 ºC PD- 1.5 - W
Derate Above 25 ºC - 12 - mW/ºC
Operating & Storage Tj,Tstg -55 to +150 ºC
Junction Temperature Range
THERMAL RESISTANCE
Junction to Case Rth (j-c) - 83.3 - ºC/W
Junction to Ambient Rth (j-a) - 200 - ºC/W
ELECTRICAL CHARACTERISTICS (Ta =25 ºC unless otherwise specified)
2N4400, 4401 NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N4402, 4403 PNP SILICON PLANAR EPITAXIAL TRANSISTORS
General Purpose Switching Applications
1 = EMITTER
2 = BASE
3 = COLLECTOR
IS / IECQ C 700000
IS / IECQ C 750100
IS/IS O 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
DIM MIN MAX
A 4,32 5,33
B 4,45 5,20
C 3,18 4,19
D 0,41 0,55
E 0,35 0,50
F 5 DEG
G 1,14 1,40
H 1,14 1,53
K 12,70 –
L 1.982 2.082
ALL DIMENSIONS IN M.M.
E C B
1 2 3
TO-92 Plastic Package
Continental Device India Limited Data Sheet Page 2 of 6
Characteristic Symbol 2N4400/01 2N4402/03 Unit
Collector Emitter Voltage
IC=1mA, IB=0 BVCEO* >40 >40 V
Collector Base Voltage
IC=100µA, IE=0 BVCBO >60 >40 V
Emitter Base Voltage
IE=100µA, IC=0 BVEBO >6 >5 V
Base Cutoff Current
VCE=35V, VBE=0.4V IBEV <0.1 <0.1 µA
Collector Cutoff Current
VCE=35V, VBE=0.4V ICEX <0.1 <0.1 µA
Collector-Emitter
Saturation Voltage
IC=150mA, IB=15mA VCE (sat)* <0.4 <0.4 V
IC=500mA, IB=50mA <0.75 <0.75 V
Base-Emitter
Saturation Voltage
IC=150mA, IB=15mA VBE (sat)* 0.75 to 0.95 0.75 to 0.95 V
IC=500mA,IB=50mA <1.2 <1.3 V
Characteristic Symbol 2N4400 2N4401 2N4402 2N4403 Unit
D C Current Gain
IC=0.1mA,VCE=1V hFE - >20 - >30
IC=1mA,VCE=1V >20 >40 >30 >60
IC=10mA,VCE=1V >40 >80 >50 >100
IC=150mA,VCE=1V* 50-150 100-300 - -
IC=150mA,VCE=2V* - - 50-150 100-300
IC=500mA,VCE=2V* >20 >40 >20 >20
DYNAMIC CHARACTERISTICS
Small Signal Current Gain
IC=1mA, VCE=10V, f=1KHz hfe 20-250 40-500 30-250 60-500
Input Impedance
IC=1mA, VCE=10V, f=1KHz hie 0.5-7.5 1.0-15 0.75-7.5 1.5-15 KΩ
2N4400, 2N4401
2N4402, 2N4403
Continental Device India Limited Data Sheet Page 3 of 6
Characteristic Symbol 2N4400 2N4401 2N4402 2N4403 Unit
Voltage Feedback Ratio hre ALL 0.1-8.0 x10–4
IC=1mA, VCE=10V, f=1KHz
Output Admittance
IC=1mA, VCE=10V, f=1KHz hoe 1.0-30 1.0-30 1.0-100 1.0-100 µ
Collector-Base Capacitance
VCB=5V, IE=0, f=100KHz Ccb <6.5 <6.5 - - pF
VCB=10V, IE=0, f=140KHz - - <8.5 <8.5 pF
Emitter-Base Capacitance
VEB=0.5V, IC=0, f=100KHz Ceb <30 <30 - - pF
VEB=0.5V, IC=0, f=140KHz - - <30 <30 pF
Transition Frequency
IC=20mA, VCE=10V fT>200 >250 >150 >200 MHz
f=100MHz
SWITCHING CHARACTERISTICS
VCC=30V, VEB=2V,
I
C=150mA, IB1=15mA
Delay time td ALL <15 ns
Rise time tr ALL <20 ns
V
CC=30V, IC=150mA,
I
B1=IB2=15mA
Storage time ts ALL <225 ns
Fall time tf ALL <30 ns
*Pluse Test : Pluse width ≤ 300µs, duty ≤ 2.0%.
2N4400, 2N4401
2N4402, 2N4403
Continental Device India Limited Data Sheet Page 4 of 6
2N4400, 2N4401
2N4402, 2N4403
DC Current Gain
hFE, DC Current Gain (Normalized)
IC Collector Current (mA)
TJ=125°C
25°C
IC=1.0mA 10mA 100mA 500mA
TJ=25°C
DC Current Gain
VCE, Collector-Emitter Voltage (V)
IB Base Current (mA)
IC Collector Current (mA)
On Voltages
TJ=25°C
VBE@VCE=1.0V
VCE(sat)@IC/IB=10
VCE=1.0V
VCE=10V
–55°C
VBE(sat)@IC/IB=10
Voltage (V)
Continental Device India Limited Data Sheet Page 5 of 6
2N4400, 2N4401
2N4402, 2N4403
DC Current Gain
hFE, DC Current Gain (Normalized)
IC Collector Current (mA)
VCE=1.0V
VCE=10V TJ=125°C
25°C
–55°C
Collector Saturation Region
VCE Collector-Emitter Voltage (V)
IB Base Current (mA)
IC=1mA 100mA 500mA
IC Collector Current (mA)
On Voltages
TJ=25°C
VBE(sat)@IC/IB=10
VBE@VCE=1.0V
VCE(sat)@IC/IB=10
10mA
Voltage (V)
Continental Device India Limited Data Sheet Page 6 of 6
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290
e-mail sales@cdil.com www.cdil.com
