1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
This PNP Silicon Epitaxial transistor is designed for use in linear and
switching applications. The device is housed in the SOT-223 package which is
designed for medium power surface mount applications.
•NPN Complement is PZT2222AT1
•The SOT-223 package can be soldered using wave or reflow
•SOT-223 package ensures level mounting, resulting in improved thermal
conduction, and allows visual inspection of soldered joints. The formed
leads absorb thermal stress during soldering eliminating the possibility of
damage to the die.
•Available in 12 mm tape and reel
Use PZT2907AT1 to order the 7 inch/1000 unit reel.
Use PZT2907AT3 to order the 13 inch/4000 unit reel.
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO –60 Vdc
Collector-Base Voltage VCBO –60 Vdc
Emitter-Base Voltage VEBO –5.0 Vdc
Collector Current IC–600 mAdc
Total Power Dissipation @ TA = 25°C(1)
Derate above 25°CPD1.5
12 Watts
mW/°C
Operating and Storage Temperature Range TJ, Tstg –65 to 150 °C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction-to-Ambient (surface mounted) RθJA 83.3 °C/W
Lead Temperature for Soldering, 0.0625″ from case
Time in Solder Bath TL260
10 °C
Sec
DEVICE MARKING
P2F
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = –10 µAdc, IE = 0) V(BR)CBO –60 °—°— Vdc
Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO –60 — — Vdc
Emitter-Base Breakdown Voltage (IE = –10 µAdc, IC = 0) V(BR)EBO –5.0 °—°— Vdc
Collector-Base Cutoff Current (VCB = –50 Vdc, IE = 0) ICBO —°—°–10 nAdc
Collector-Emitter Cutoff Current (VCE = –30 Vdc, VBE = 0.5 Vdc) ICEX — — –50 nAdc
Base-Emitter Cutoff Current (VCE = –30 Vdc, VBE = –0.5 Vdc) IBEX — — –50 nAdc
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by PZT2907AT1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1996
SOT-223 PACKAGE
PNP SILICON
TRANSISTOR
SURFACE MOUNT
Motorola Preferred Device
CASE 318E-04, STYLE 1
TO-261AA
123
4
COLLECTOR
2,4
BASE 1
3
EMITTER
REV 4
PZT2907AT1
2Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS(2)
DC Current Gain
(IC = –0.1 mAdc, VCE = –10 Vdc)
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
(IC = –150 mAdc, VCE = –10 Vdc)
(IC = –500 mAdc, VCE = –10 Vdc)
hFE 75
100
100
100
50
—
—
—
—
—
—
—
—
300
—
—
Collector-Emitter Saturation Voltages
(IC = –150 mAdc, IB = –15 mAdc)
(IC = – 500 mAdc, IB = –50 mAdc)
VCE(sat) —
——
—–0.4
–1.6
Vdc
Base-Emitter Saturation Voltages
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
VBE(sat) —
——
—–1.3
–2.6
Vdc
DYNAMIC CHARACTERISTICS
Current-Gain — Bandwidth Product (IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz) fT200 — — MHz
Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Cc— — 8.0 pF
Input Capacitance (VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz) Ce— — 30 pF
SWITCHING TIMES
Turn-On Time
(VCC = –30 Vdc, IC = –150 mAdc,
IB1 = –15 mAdc)
ton — — 45 ns
Delay Time
(VCC = –30 Vdc, IC = –150 mAdc,
IB1 = –15 mAdc)
td— — 10
Rise Time
IB1 = –15 mAdc)
tr— — 40
Turn-Off Time
(VCC = –6.0 Vdc, IC = –150 mAdc,
IB1 = IB2 = –15 mAdc)
toff — — 100 ns
Storage Time
(VCC = –6.0 Vdc, IC = –150 mAdc,
IB1 = IB2 = –15 mAdc)
ts— — 80
Fall Time
IB1 = IB2 = –15 mAdc)
tf— — 30
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle = 2.0%.
Figure 1. Delay and Rise
Time Test Circuit Figure 2. Storage and Fall
Time Test Circuit
INPUT
Zo = 50
Ω
PRF = 150 Hz
RISE TIME
≤
2.0 ns
01.0 k
50
– 16 V
200 ns
– 30 V
200
TO OSCILLOSCOPE
RISE TIME
≤
5.0 ns 01.0 k
50
– 30 V
200 ns
– 6.0 V
37
TO OSCILLOSCOPE
RISE TIME
≤
5.0 ns
+15 V
1.0 k
1N916
INPUT
Zo = 50
Ω
PRF = 150 Hz
RISE TIME
≤
2.0 ns
PZT2907AT1
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
1000
100
10 –1000–100–10–1.0–0.1 IC, COLLECTOR CURRENT (mA)
hFE, CURRENT GAIN
TJ = 125
°
C
TJ = –55
°
C
TJ = 25
°
C
Figure 3. DC Current Gain
1000
100
10 –1000–100–10–1.0
VCE = –20 V
TJ = 25
°
C
IC, COLLECTOR CURRENT (mA)
Figure 4. Current Gain Bandwidth Product
fT, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
–1.0
–0.8
–0.6
–0.4
–0.2
0
VOLTAGE (VOLTS)
–500–200–100
–50–20–10–0.1 –0.2 –0.5 –1.0 –2.0 –5.0
IC, COLLECTOR CURRENT (mA)
Figure 5. “ON” Voltage
TJ = 25
°
C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = –10 V
VCE(sat) @ IC/IB = 10
30
20
10
7.0
5.0
3.0
2.0
–0.1 –0.2 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30
REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitances
CAPACITANCE (pF)
Ceb
Ccb
PZT2907AT1
4Motorola Small–Signal Transistors, FETs and Diodes Device Data
INFORMATION FOR USING THE SOT-223 SURFACE MOUNT PACKAGE
POWER DISSIPATION
The power dissipation of the SOT-223 is a function of the
pad size. These can vary from the minimum pad size for
soldering to the pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction tempera-
ture of the die, RθJA, the thermal resistance from the device
junction to ambient; and the operating temperature, TA.
Using the values provided on the data sheet for the SOT -223
package, PD can be calculated as follows.
PD = TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature T A of 25°C, one can
calculate the power dissipation of the device which in this
case is 1.5 watts.
PD = 150°C – 25°C
83.3°C/W
= 1.5 watts
The 83.3°C/W for the SOT-223 package assumes the
recommended collector pad area of 965 sq. mils on a glass
epoxy printed circuit board to achieve a power dissipation of
1.5 watts. If space is at a premium, a more realistic
approach is to use the device at a PD of 833 mW using the
footprint shown. Using a board material such as Thermal
Clad, a power dissipation of 1.6 watts can be achieved using
the same footprint.
MOUNTING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
•Always preheat the device.
•The delta temperature between the preheat and soldering
should be 100°C or less.*
•When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference should be a maximum of 10°C.
•The soldering temperature and time should not exceed
260°C for more than 10 seconds.
•When shifting from preheating to soldering, the maximum
temperature gradient should be 5°C or less.
•After soldering has been completed, the device should be
allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
•Mechanical stress or shock should not be applied during
cooling
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.079
2.0
0.15
3.8
0.248
6.3
0.079
2.0
0.059
1.5 0.059
1.5 0.059
1.5
0.091
2.3
mm
inches
0.091
2.3
PZT2907AT1
5
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
TO-261AA
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
H
S
F
A
B
D
G
L
4
1 2 3
0.08 (0003)
C
MK
J
DIM
AMIN MAX MIN MAX
MILLIMETERS
0.249 0.263 6.30 6.70
INCHES
B0.130 0.145 3.30 3.70
C0.060 0.068 1.50 1.75
D0.024 0.035 0.60 0.89
F0.115 0.126 2.90 3.20
G0.087 0.094 2.20 2.40
H0.0008 0.0040 0.020 0.100
J0.009 0.014 0.24 0.35
K0.060 0.078 1.50 2.00
L0.033 0.041 0.85 1.05
M0 10 0 10
S0.264 0.287 6.70 7.30
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
_ _ _ _
CASE 318E–04
ISSUE H
PZT2907AT1
6Motorola Small–Signal Transistors, FETs and Diodes Device Data
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
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arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
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PZT2907AT1/D
*PZT2907AT1/D*
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