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XP152A12C0MR-G
Power MOSFET
PRODUCTS PACKAGE ORDER UNIT
XP152A12C0MR SOT-23 3,000/Reel
XP152A12C0MR-G(*) SOT-23 3,000/Reel
PARAMETER SYMBOL RATINGS UNITS
Drain - Source Voltage Vdss -20 V
Gate - Source Voltage Vgss ±12 V
Drain Current (DC) Id -0.7 A
Drain Current (Pulse) Idp -2.8 A
Reverse Drain Current Idr -0.7 A
Channel Power Dissipation *
Pd 0.5 W
Channel Temperature Tch 150 ℃
S torage Temperature Tstg -55~150 ℃
■GENERAL DESCRIPTION
The XP152A12C0MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching
characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
In order to counter st atic, a gate protect diode i s built-in.
The small SOT-23 packa
g
e makes hi
g
h densit
y
mountin
g
possible.
■APPLICATIONS
●Notebook PCs
●Cellular and portable phones
●On-board power supplies
●Li-ion battery systems
■FEATURES
Low On-State Resistance :
Rds(on) = 0.3
Ω
@ Vgs = -4.5V
:
Rds(on) = 0.5
Ω
@ Vgs = -2.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage : -2.5V
P-Channel Power MOSFET
DMOS Structure
Small Package : SOT-23
Environmentally Friendly : EU RoHS Compliant, Pb Free
■PIN CONFIGURATION/
MARKING ■PIN
A
SSIGNMENT
■
A
BSOLUTE M
A
XIMUM R
A
TINGS
■EQUIVALENT CIRCUIT Ta = 25℃
* When implemented on a ceramic PCB
ETR1121_003
G：Gate
S：Source
D：Drain
2 1 2 x
* x represents production lot number.
(*)
The “-G” suffix denotes Halogen and Antimony free as well as
being fully RoHS complia nt.
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XP152A12C0MR-G
PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS
Drain Cut-Off Current Idss Vds= -20V, Vgs= 0V - - -10 μA
Gate-Source Leak Current Igss Vgs= ±12V, Vds= 0V - - ±10 μA
Gate-Source Cut-Off Voltage Vgs(off) Id= -1mA, Vds= -10V -0.5 - -1.2 V
Id= -0.4A, Vgs= -4.5V - 0.23 0.30 Ω
Drain-Source On-S tate Resistance *1
Rds(on) Id= -0.4A, Vgs= -2.5V - 0.37 0.50 Ω
Forward Transfer Admittance *1 | Yfs | Id= -0.4A, Vds= -10V - 1.5 - S
Body Drain Diode
Forward Voltage Vf If= -0.7A, Vgs= 0V - -0.8 -1.1 V
PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS
Thermal Resist ance
(Channel-Ambience) Rth (ch-a) Implement on a ceramic PCB - 250 - ℃/W
PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS
Input Capacitance Ciss - 180 - pF
Output Capacit ance Coss - 120 - pF
Feedback Cap acitance Crss
Vds= -10V, Vgs=0V
f= 1MHz - 60 - pF
PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS
T urn-On Delay Time td (on) - 5 - ns
Rise T ime tr - 20 - ns
T urn-Off Delay Time td (off) - 55 - ns
Fall Time tf
Vgs= -5V, Id= -0.4A
Vdd= -10V
- 70 - ns
■ELECTRICAL CHARACTERISTICS
DC Characteristics Ta = 25℃
*1 Effective during pulse test.
Ta = 25℃
Switching Characteristics
Thermal Characteristics
Dynamic Characteristics Ta = 25℃
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XP152A12C0MR-G
■TYPICAL PERFOMANCE CHARACTERISTICS
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XP152A12C0MR-G
■TYPICAL PERFOMANCE CHARACTERISTICS (Continued)
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XP152A12C0MR-G
1. The products and product specifi cations containe d herein are subject to change without
notice to improve performance characteristics. Consult us, or our representatives
before use, to confirm that the information in this datasheet is up to date.
2. We assume no responsibility for any infringement of patents, patent rights, or other
rights ari sin g from the use of any information and circuitry in this datasheet.
3. Please ensure suitable shipping controls (including fail-safe designs and aging
protection) are in force for equipment employing products listed in this datasheet.
4. The products in this datasheet are not developed, designed, or approved for use with
such equipment whose failure of malfunction can be reasonably expected to directly
endanger the life of, or cause significant injury to, the user.
(e.g. Atomic energy; aerospace; transport; combustion and associated safety
equipment thereof.)
5. Please use the prod ucts listed in this datasheet within the specified ranges.
Should you wish to use the products under conditions exceeding the specifications,
please consult us or our re presentatives.
6. We assume no responsibility for damage or loss due to abnormal use.
7. All rights reserved. No part of this datasheet may be copied or reproduced without the
prior permission of TOREX SEMICONDUCTOR LTD.
