© Semiconductor Components Industries, LLC, 2004
April, 2020 − Rev. 2
1Publication Order Number:
HGTG30N60B3D/D
UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast
Diode
60 A, 600 V
HGTG30N60B3D
The HGTG30N60B3D is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a MOSFET
and the low on−state conduction loss of a bipolar transistor. The much
lower on−state voltage drop varies only moderately between 25°C and
150°C. The IGBT used is the development type TA49170. The diode
used in anti−parallel with the IGBT is the development type TA49053.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses are
essential, such as: AC and DC motor controls, power supplies and
drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49172.
Features
•60 A, 600 V, TC = 25°C
•600 V Switching SOA Capability
•Typical Fall Time 90 ns at TJ = 150°C
•Short Circuit Rating
•Low Conduction Loss
•Hyperfast Anti−Parallel Diode
•This is a Pb−Free Device
C
E
G
www.onsemi.com
MARKING DIAGRAM
See detailed ordering and shipping information on page 7 of
this data sheet.
ORDERING INFORMATION
G
E
C
TO−247−3LD SHORT LEAD
CASE 340CK
JEDEC STYLE
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
G30N60B3D = Specific Device Code
$Y&Z&3&K
G30N60B3D
HGTG30N60B3D
www.onsemi.com
2
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
Parameter Symbol HGTG30N60B3D Unit
Collector to Emitter Voltage BVCES 600 V
Collector Current Continuous
At TC = 25°C
At TC = 110°C
IC25
IC110
60
30
A
A
Average Diode Forward Current at 110°C IEC(AVG) 25 A
Collector Current Pulsed (Note 1) ICM 220 A
Gate to Emitter Voltage Continuous VGES ±20 V
Gate to Emitter Voltage Pulsed VGEM ±30 V
Switching Safe Operating Area at TJ = 150°C, (Figure 2) SSOA 60 A at 600 V
Power Dissipation Total at TC = 25°C PD208 W
Power Dissipation Derating TC > 25°C 1.67 W/°C
Operating and Storage Junction Temperature Range TJ, TSTG −55 to 150 °C
Maximum Lead Temperature for Soldering TL260 °C
Short Circuit Withstand Time (Note 2) at VGE = 12 V tSC 4ms
Short Circuit Withstand Time (Note 2) at VGE = 10 V tSC 10 ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360 V, TJ =125°C, RG = 3 W.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
Collector to Emitter Breakdown Voltage BVCES IC = 250 mA, VGE = 0 V 600 − − V
Collector to Emitter Leakage Current ICES VCE = BVCES TJ = 25°C− − 250 mA
TJ = 150°C− − 3 mA
Collector to Emitter Saturation Voltage VCE(SAT) IC = IC110, VGE = 15 V TJ = 25°C−1.45 1.9 V
TJ = 150°C−1.7 2.1 V
Gate to Emitter Threshold Voltage VGE(TH) IC = 250 mA, VCE = VGE 4.2 5 6 V
Gate to Emitter Leakage Current IGES VGE = ±20 V − − ±250 nA
Switching SOA SSOA TJ = 150°C, RG = 3 W,
VGE = 15 V, L = 100 mH,
VCE(PK) = 480 V 200 − − A
VCE(PK) = 600 V 60 − − A
Gate to Emitter Plateau Voltage VGEP IC = IC110, VCE = 0.5 BVCES −7.2 −V
On−State Gate Charge QG(ON) IC = IC110,
VCE = 0.5 BVCES
VGE = 15 V −170 190 nC
VGE = 20 V −230 250 nC
Current Turn−On Delay Time td(ON)I IGBT and Diode at TJ = 25°C,
ICE = IC110,
VCE = 0.8 BVCES,
VGE = 15 V,
RG = 3 W,
L = 1 mH,
Test Circuit (Figure 19)
−36 −ns
Current Rise Time trI −25 −ns
Current Turn−Off Delay Time td(OFF)I −137 −ns
Current Fall Time tfI −58 −ns
Turn−On Energy EON −550 800 mJ
Turn−Off Energy (Note 3) EOFF −680 900 mJ
Current Turn−On Delay Time td(ON)I IGBT and Diode at TJ = 150°C,
ICE = IC110,
VCE = 0.8 BVCES,
VGE = 15 V,
RG = 3 W,
L = 1 mH,
Test Circuit (Figure 19)
−32 −ns
Current Rise Time trI −24 −ns
Current Turn−Off Delay Time td(OFF)I −275 320 ns
Current Fall Time tfI −90 150 ns
Turn−On Energy EON −1300 1550 mJ
Turn−Off Energy (Note 3) EOFF −1600 1900 mJ
Diode Forward Voltage VEC IEC = 30 A −1.95 2.5 V
HGTG30N60B3D
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) (continued)
Parameter UnitMaxTypMinTest ConditionSymbol
Diode Reverse Recovery Time trr IEC = 1 A, dIEC/dt = 200 A/ms−32 40 ns
IEC = 30 A, dIEC/dt = 200 A/ms−45 55 ns
Thermal Resistance Junction To Case RqJC IGBT − − 0.6 °C/W
Diode − − 1.3 °C/W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Turn−Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0 A). All devices were tested per JEDEC Standard No. 24−1 Method for
Measurement of Power Device Turn−Off Switching Loss. This test method produces the true total Turn−Off Energy Loss.
TYPICAL PERFORMANCE CURVES (unless otherwise specified)
6
8
10
12
16
20
14
150
200
250
300
350
400
500
tSC
ISC
1
0.1
10
100
125
75
25
50
100
0
150
175
200
225
10
0
40
20
30
50
60
5025 7000 300200100
510 6020
tSC, SHORT CIRCUIT WITHSTAND
TIME (ms)
1513
ICE, DC COLLECTOR CURRENT (A)
TC, CASE TEMPERATURE (°C)
10075 125 150
VGE = 15 V
ICE, COLLECTOR TO EMITTER
CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
600500400
ISC, PEAK SHORT CIRCUIT CURRENT (A)
10 11 12 14
ICE, COLLECTOR TO EMITTER CURRENT (A) VGE, GATE TO EMITTER VOLTAGE (V)
fMAX, OPERATING FREQUENCY (kHz)
TC VGE
75°C 15 V
75°C 10 V
110°C 15 V
110°C 10 V
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD − PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RqJC = 0.6°C/W, SEE NOTES
TJ = 150°C, RG = 3 W,
L = 1 mH, VCE = 480 V
Figure 1. DC COLLECTOR CURRENT vs.
CASE TEMPERATURE
Figure 2. MINIMUM SWITCHING SAFE
OPERATING AREA
Figure 3. OPERATING FREQUENCY vs.
COLLECTOR TO EMITTER CURRENT
Figure 4. SHORT CIRCUIT WITHSTAND TIME
TJ = 150°C, RG = 3 W, VGE = 15 V, L = 100 mH
40
VCE = 360 V, RG = 3 W, TJ = 125°C
18 450
HGTG30N60B3D
www.onsemi.com
4
TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued)
0
50
250
200
100
150
25
30
35
40
45
50
55
0
0.5
1.0
2.5
2.0
1.5
3.0
3.5
4.0
4.5
5
3
4
2
1
6
0
200
250
300
350
0
150
100
50
25
50
75
150
175
225
200
ICE, COLLECTOR TO EMITTER
CURRENT (A)
06
EON, TURN−ON ENERGY LOSS (mJ)
3020 4010
EOFF
, TURN−OFF ENERGY LOSS (mJ)
td(ON)I, TURN−ON DELAY TIME (ns)
trI, RISE TIME (ns)
ICE, COLLECTOR TO EMITTER
CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
81024
6050
3020 4010 6050
DUTY CYCLE < 0.5%, VGE = 15 V
PULSE DURATION = 250 ms
TJ = 25°C,TJ = 150°C, VGE = 10 V
TJ = 150°C, VGE = 10 V or 15 V
TJ = 25°C, VGE = 10 V or 15 V
RG = 3 W, L = 1 mH, VCE = 480 V
RG = 3 W, L = 1 mH, VCE = 480 V RG = 3 W, L = 1 mH, VCE = 480 V
TJ = 25°C, TJ = 150°C, VGE = 10 V
TJ = 25°C, TJ = 150°C, VGE = 15 V
Figure 5. COLLECTOR TO EMITTER ON−STATE
VOLTAGE
Figure 6. COLLECTOR TO EMITTER ON−STATE
VOLTAGE
Figure 7. TURN−ON ENERGY LOSS vs.
COLLECTOR TO EMITTER CURRENT
Figure 8. TURN−OFF ENERGY LOSS vs.
COLLECTOR TO EMITTER CURRENT
Figure 9. TURN−ON DELAY TIME vs. COLLECTOR
TO EMITTER CURRENT
Figure 10. TURN−ON RISE TIME vs. COLLECTOR
TO EMITTER CURRENT
DUTY CYCLE < 0.5%, VGE = 10 V
PULSE DURATION = 250 ms
TC = −55°CTC = 150°C
TC = 25°C
034512 67
100
125
TC = −55°C
TC = 150°C
TC = 25°C
TJ = 25°C,TJ = 150°C, VGE = 15 V
RG = 3 W, L = 1 mH, VCE = 480 V
3020 4010 6050
TJ = 25°C, TJ = 150°C, VGE = 10 V
3020 4010 6050
TJ = 25°C, TJ = 150°C, VGE = 15 V
HGTG30N60B3D
www.onsemi.com
5
TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued)
0
2
4
6
8
10
CRES
FREQUENCY = 1 MHz
COES
CIES
0
8
10
6
12
14
16
0
50
100
150
200
250
300
40
100
120
60
80
250
300
100
200
150
71160 50 200
tfI, FALL TIME (ns)VGE, GATE TO EMITTER VOLTAGE (V)
td(OFF)I, TURN−OFF DELAY TIME (ns)
ICE, COLLECTOR TO EMITTER CURRENT (A)
VGE, GATE TO EMITTER VOLTAGE (V) QG, GATE CHARGE (nC)
DUTY CYCLE < 0.5%, VCE = 10 V
PULSE DURATION = 250 ms
TJ = 150°C, VGE = 10 V, VGE = 15 V
TJ = 25°C, VGE = 10 V, VGE = 15 V
Figure 11. TURN−OFF DELAY TIME vs.
COLLECTOR TO EMITTER CURRENT
Figure 12. FALL TIME vs. COLLECTOR TO
EMITTER CURRENT
Figure 13. TRANSFER CHARACTERISTIC Figure 14. GATE CHARGE WAVEFORMS
RG = 3 W, L =1 mH,
VCE = 480 V
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER
CURRENT (A)
TC = −55°C
TC = 150°C
TC = 25°C
Ig(REF) = 1 mA, RL = 10 W, TC = 25°C
VCE = 600 V
VCE = 400 V
VCE = 200 V
9810 100 150
TJ = 150°C, VGE = 10 V and 15 V
TJ = 25°C, VGE = 10 V and 15 V
RG = 3 W, L = 1 mH, VCE = 480 V
3020 40
10 60
50 3020 40
10 60
50
54
4
2
C, CAPACITANCE (nF)
05 25
Figure 15. CAPACITANCE vs. COLLECTOR TO
EMITTER VOLTAGE
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
10 15 20
HGTG30N60B3D
www.onsemi.com
6
TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued)
30
40
20
0
10
50
0
25
50
75
100
125
150
175
200
10−510−3100101
10−410−1
10−2
SINGLE PULSE
100
10−1
10−2
0.50
0.05
0.01
0.02
0.10
0.20
t1, RECTANGULAR PULSE DURATION (s)
ZqJC, NORMALIZED THERMAL RESPONSE
Figure 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
t1
t2
PD
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD x ZqJC x RqJC) + TC
0.50 030
t, RECOVERY TIMES (ns)
VEC, FORWARD VOLTAGE (V) IEC, FORWARD CURRENT (A)
Figure 17. DIODE FORWARD CURRENT vs.
FORWARD VOLTAGE DROP
Figure 18. RECOVERY TIMES vs.
FORWARD CURRENT
IEC, FORWARD CURRENT (A)
1.0 1.5 2.0 2.5 220510
TC = 25°C, dIEC/dt = 200 A/ms
trr
3.0
100°C
25°C
−55°C
3.5 4.0
tb
ta
TEST CIRCUIT AND WAVEFORMS
+
−
HGTG30N60B3D
tfI
td(OFF)I trI
td(ON)I
10%
90%
10%
90%
VCE
ICE
VGE
EOFF
EON2
VDD = 480 V
L = 1 mH
RG = 3 W
Figure 19. INDUCTIVE SWITCHING TEST CIRCUIT Figure 20. SWITCHING TEST WAVEFORMS
HGTG30N60B3D
www.onsemi.com
7
HANDLING PRECAUTIONS FOR IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate−insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge built
in the handler’s body capacitance is not discharged through
the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers
in military, industrial and consumer applications, with
virtually no damage problems due to electrostatic discharge.
IGBTs can be handled safely if the following basic
precautions are taken:
1. Prior to assembly into a circuit, all leads should be
kept shorted together either by the use of metal
shorting springs or by the insertion into conductive
material such as “ECCOSORBDt LD26” or
equivalent.
2. When devices are removed by hand from their
carriers, the hand being used should be grounded
by any suitable means − for example, with a
metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed
from circuits with power on.
5. Gate Voltage Rating − Never exceed the
gate−voltage rating of VGEM. Exceeding the rated
VGE can result in permanent damage to the oxide
layer in the gate region.
6. Gate Termination − The gates of these devices are
essentially capacitors. Circuits that leave the gate
open−circuited or floating should be avoided.
These conditions can result in turn−on of the
device due to voltage buildup on the input
capacitor due to leakage currents or pickup.
7. Gate Protection − These devices do not have an
internal monolithic Zener diode from gate to
emitter. If gate protection is required an external
Zener is recommended.
OPERATING FREQUENCY INFORMATION
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 5, 6, 7,
8, 9 and 11. The operating frequency plot (Figure 3) of a
typical device shows fMAX1 or fMAX2; whichever is smaller
at each point. The information is based on measurements of
a typical device and is bounded by the maximum rated
junction temperature.
fMAX1 is defined by fMAX1 = 0.05 / (td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to
10% of the on−state time for a 50% duty factor. Other
definitions are possible. td(OFF)I and td(ON)I are defined in
Figure 20. Device turn−off delay can establish an additional
frequency limiting condition for an application other than
TJM. td(OFF)I is important when controlling output ripple
under a lightly loaded condition.
fMAX2 is defined by fMAX2 = (PD − PC) / (EOFF + EON).
The allowable dissipation (PD) is defined by PD = (TJM − TC)
/ RqJC. The sum of device switching and conduction losses
must not exceed PD. A 50% duty factor was used (Figure 3)
and the conduction losses (PC) are approximated by
PC = (VCE x ICE) / 2.
EON and EOFF are defined in the switching waveforms
shown in Figure 20. EON is the integral of the instantaneous
power loss (ICE x VCE) during turn−on and EOFF is the
integral of the instantaneous power loss (ICE x VCE) during
turn−off. All tail losses are included in the calculation for
EOFF; i.e., the collector current equals zero (ICE = 0).
ORDERING INFORMATION
Part Number Package Brand Shipping
†
HGTG30N60B3D TO−247 G30N60B3D 450 Units / Tube
NOTE: When ordering, use the entire part number.
All brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders.
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
ZZ = Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
E
D
L1
E2
(3X) b
(2X) b2
b4
(2X) e
Q
L
0.25 MBAM
A
A1
A2
A
c
B
D1
P1
S
P
E1
D2
2
13
2
DIM MILLIMETERS
MIN NOM MAX
A 4.58 4.70 4.82
A1 2.20 2.40 2.60
A2 1.40 1.50 1.60
b 1.17 1.26 1.35
b2 1.53 1.65 1.77
b4 2.42 2.54 2.66
c 0.51 0.61 0.71
D 20.32 20.57 20.82
D1 13.08 ~ ~
D2 0.51 0.93 1.35
E 15.37 15.62 15.87
E1 12.81 ~ ~
E2 4.96 5.08 5.20
e ~ 5.56 ~
L 15.75 16.00 16.25
L1 3.69 3.81 3.93
P 3.51 3.58 3.65
P1 6.60 6.80 7.00
Q 5.34 5.46 5.58
S 5.34 5.46 5.58
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
98AON13851G
DOCUMENT NUMBER:
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
TO−247−3LD SHORT LEAD
© Semiconductor Components Industries, LLC, 2018 www.onsemi.com
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
◊
