TO -2 20A B BT136-600D 4Q Triac 30 September 2013 Product data sheet 1. General description Planar passivated very sensitive gate four quadrant triac in a SOT78 plastic package intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. This very sensitive gate "series D" triac is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 2. Features and benefits * * * * * * Direct triggering from low power drivers and logic ICs High blocking voltage capability Low holding current for low current loads and lowest EMI at commutation Planar passivated for voltage ruggedness and reliability Triggering in all four quadrants Very sensitive gate 3. Applications * * General purpose motor control General purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDRM Conditions Min Typ Max Unit repetitive peak offstate voltage - - 600 V ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 C; state current tp = 20 ms; Fig. 4; Fig. 5 - - 25 A IT(RMS) RMS on-state current - - 4 A - 2 5 mA - 2.5 5 mA full sine wave; Tmb 107 C; Fig. 1; Fig. 2; Fig. 3 Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 C; Fig. 7 Scan or click this QR code to view the latest information for this product BT136-600D NXP Semiconductors 4Q Triac Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2- G-; - 2.5 5 mA - 5 10 mA - 1.2 10 mA Tj = 25 C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 C; Fig. 7 IH holding current VD = 12 V; Tj = 25 C; Fig. 9 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 T1 main terminal 1 2 T2 main terminal 2 3 G gate mb T2 mounting base; main terminal 2 mb Graphic symbol T2 sym051 T1 G 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT136-600D TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 BT136-600D/DG TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 BT136-600D Product data sheet All information provided in this document is subject to legal disclaimers. 30 September 2013 (c) NXP N.V. 2013. All rights reserved 2 / 13 BT136-600D NXP Semiconductors 4Q Triac 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current full sine wave; Tmb 107 C; Fig. 1; Min Max Unit - 600 V - 4 A - 25 A - 27 A Fig. 2; Fig. 3 ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 C; tp = 20 ms; Fig. 4; Fig. 5 full sine wave; Tj(init) = 25 C; tp = 16.7 ms I t I2t for fusing tp = 10 ms; SIN - 3.1 A s dIT/dt rate of rise of on-state current IT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/s; - 50 A/s - 50 A/s - 50 A/s - 10 A/s 2 2 T2+ G+ IT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/s; T2+ GIT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/s; T2- GIT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/s; T2- G+ IGM peak gate current - 2 A PGM peak gate power - 5 W PG(AV) average gate power - 0.5 W Tstg storage temperature -40 150 C Tj junction temperature - 125 C BT136-600D Product data sheet over any 20 ms period All information provided in this document is subject to legal disclaimers. 30 September 2013 (c) NXP N.V. 2013. All rights reserved 3 / 13 BT136-600D NXP Semiconductors 4Q Triac 003aae828 5 003aae830 12 IT(RMS) (A) 10 IT(RMS) (A) 4 8 3 6 2 4 1 2 0 - 50 Fig. 1. 0 50 100 Tmb (C) 0 10- 2 150 10- 1 1 10 surge duration (s) f = 50 Hz Tmb 107 C RMS on-state current as a function of mounting base temperature; maximum values Fig. 2. RMS on-state current as a function of surge duration; maximum values 003aae827 8 conduction form angle factor Ptot (degrees) a (W) 30 4 6 60 2.8 90 2.2 120 1.9 180 1.57 = 180 120 90 4 60 30 2 0 0 1 2 3 4 IT(RMS) (A) 5 = conduction angle a = form factor = IT(RMS) / IT(AV) Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values BT136-600D Product data sheet All information provided in this document is subject to legal disclaimers. 30 September 2013 (c) NXP N.V. 2013. All rights reserved 4 / 13 BT136-600D NXP Semiconductors 4Q Triac 003aae831 30 ITSM (A) 25 20 15 ITSM IT 10 t 5 0 1/f Tj(init) = 25 C max 1 10 102 103 104 number of cycles f = 50 Hz Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values 003aae829 103 ITSM IT t ITSM (A) tp Tj(init) = 25 C max 102 (1) (2) 10 10- 5 10- 4 10- 3 10- 2 tp (s) 10- 1 tp 20 ms (1) dIT/dt limit (2) T2- G+ quadrant limit Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values BT136-600D Product data sheet All information provided in this document is subject to legal disclaimers. 30 September 2013 (c) NXP N.V. 2013. All rights reserved 5 / 13 BT136-600D NXP Semiconductors 4Q Triac 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base half cycle; Fig. 6 - - 3.7 K/W full cycle; Fig. 6 - - 3 K/W thermal resistance from junction to ambient in free air - 60 - K/W Rth(j-a) 003aae836 10 Zth(j-mb) (K/W) unidirectional 1 bidirectional 10- 1 P tp 10- 2 10- 5 Fig. 6. 10- 4 10- 3 10- 2 10- 1 1 tp (s) t 10 Transient thermal impedance from junction to mounting base as a function of pulse width BT136-600D Product data sheet All information provided in this document is subject to legal disclaimers. 30 September 2013 (c) NXP N.V. 2013. All rights reserved 6 / 13 BT136-600D NXP Semiconductors 4Q Triac 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2+ G+; - 2 5 mA - 2.5 5 mA - 2.5 5 mA - 5 10 mA - 1.6 10 mA - 4.5 15 mA - 1.2 10 mA - 2.2 15 mA Static characteristics IGT gate trigger current Tj = 25 C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 C; Fig. 7 IL latching current VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 C; Fig. 8 VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 C; Fig. 8 VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 C; Fig. 8 VD = 12 V; IG = 0.1 A; T2- G+; Tj = 25 C; Fig. 8 IH holding current VD = 12 V; Tj = 25 C; Fig. 9 - 1.2 10 mA VT on-state voltage IT = 5 A; Tj = 25 C; Fig. 10 - 1.4 1.7 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 C; - 0.7 1 V 0.25 0.4 - V VD = 600 V; Tj = 125 C - 0.1 0.5 mA VDM = 402 V; Tj = 125 C; RGT1 = 1 k; - 5 - V/s - 2 - s Fig. 11 VD = 400 V; IT = 0.1 A; Tj = 125 C; Fig. 11 ID off-state current Dynamic characteristics dVD/dt rate of rise of off-state voltage (VDM = 67% of VDRM); exponential waveform tgt gate-controlled turn-on ITM = 6 A; VD = 600 V; IG = 0.1 A; dIG/ time dt = 5 A/s BT136-600D Product data sheet All information provided in this document is subject to legal disclaimers. 30 September 2013 (c) NXP N.V. 2013. All rights reserved 7 / 13 BT136-600D NXP Semiconductors 4Q Triac 003aae833 3 003aae835 3 IL IL(25C) IGT IGT (25 C) (1) (2) 2 2 (3) (4) (1) (2) (3) 1 0 - 60 1 (4) - 10 40 90 Tj (C) 0 - 60 140 (1) T2- G+ (2) T2- G(3) T2+ G(4) T2+ G+ Fig. 7. Fig. 8. - 10 40 90 Tj (C) 140 Normalized latching current as a function of junction temperature Normalized gate trigger current as a function of junction temperature 003aae837 2.0 003aae834 12 IH IH(25C) IT (A) 1.5 8 1.0 4 0.5 0 - 60 Fig. 9. (1) - 10 40 90 Tj (C) 0 140 0 1 (2) (3) 2 VT (V) 3 Vo = 1.27 V Normalized holding current as a function of junction temperature Rs = 0.091 (1) Tj = 125 C; typical values (2) Tj = 125 C; maximum values (3) Tj = 25 C; maximum values Fig. 10. On-state current as a function of on-state voltage BT136-600D Product data sheet All information provided in this document is subject to legal disclaimers. 30 September 2013 (c) NXP N.V. 2013. All rights reserved 8 / 13 BT136-600D NXP Semiconductors 4Q Triac 003aae832 1.6 VGT VGT (25 C) 1.2 0.8 0.4 0 - 60 - 10 40 90 Tj (C) 140 Fig. 11. Normalized gate trigger voltage as a function of junction temperature BT136-600D Product data sheet All information provided in this document is subject to legal disclaimers. 30 September 2013 (c) NXP N.V. 2013. All rights reserved 9 / 13 BT136-600D NXP Semiconductors 4Q Triac 10. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E A A1 p q mounting base D1 D L1(1) L2(1) Q L b1(2) (3x) b2(2) (2x) 1 2 3 b(3x) e c e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) L2(1) max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.6 1.0 1.3 1.0 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 2.54 15.0 12.8 3.30 2.79 3.0 3.8 3.5 3.0 2.7 2.6 2.2 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC JEITA 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13 Fig. 12. Package outline TO-220AB (SOT78) BT136-600D Product data sheet All information provided in this document is subject to legal disclaimers. 30 September 2013 (c) NXP N.V. 2013. All rights reserved 10 / 13 BT136-600D NXP Semiconductors 4Q Triac In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 11. 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This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 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Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 30 September 2013 (c) NXP N.V. 2013. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Limiting values .......................................................3 8 Thermal characteristics .........................................6 9 Characteristics ....................................................... 7 10 Package outline ................................................... 10 11 11.1 11.2 11.3 11.4 Legal information .................................................11 Data sheet status ............................................... 11 Definitions ...........................................................11 Disclaimers .........................................................11 Trademarks ........................................................ 12 (c) NXP N.V. 2013. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 30 September 2013 BT136-600D Product data sheet All information provided in this document is subject to legal disclaimers. 30 September 2013 (c) NXP N.V. 2013. All rights reserved 13 / 13