BT136-600D/DG,127"" - NXP SEMICONDUCTORS

BT136-600D

4Q Triac

30 September 2013 Product data sheet

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1. General description

Planar passivated very sensitive gate four quadrant triac in a SOT78 plastic package

intended for use in general purpose bidirectional switching and phase control

applications, where high sensitivity is required in all four quadrants. This very sensitive

gate "series D" triac is intended to be interfaced directly to microcontrollers, logic

integrated circuits and other low power gate trigger circuits.

2. Features and benefits

•Direct triggering from low power drivers and logic ICs

•High blocking voltage capability

•Low holding current for low current loads and lowest EMI at commutation

•Planar passivated for voltage ruggedness and reliability

•Triggering in all four quadrants

•Very sensitive gate

3. Applications

•General purpose motor control

•General purpose switching

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDRM repetitive peak off-

state voltage

- - 600 V

ITSM non-repetitive peak on-

state current

full sine wave; Tj(init) = 25 °C;

tp = 20 ms; Fig. 4; Fig. 5

- - 25 A

IT(RMS) RMS on-state current full sine wave; Tmb ≤ 107 °C; Fig. 1;

Fig. 2; Fig. 3

- - 4 A

Static characteristics

VD = 12 V; IT = 0.1 A; T2+ G+;

Tj = 25 °C; Fig. 7

- 2 5 mAIGT gate trigger current

VD = 12 V; IT = 0.1 A; T2+ G-;

Tj = 25 °C; Fig. 7

- 2.5 5 mA

NXP Semiconductors BT136-600D

4Q Triac

Product data sheet 30 September 2013 2 / 13

Symbol Parameter Conditions Min Typ Max Unit

VD = 12 V; IT = 0.1 A; T2- G-;

Tj = 25 °C; Fig. 7

- 2.5 5 mA

VD = 12 V; IT = 0.1 A; T2- G+;

Tj = 25 °C; Fig. 7

- 5 10 mA

IHholding current VD = 12 V; Tj = 25 °C; Fig. 9 - 1.2 10 mA

5. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 T1 main terminal 1

2 T2 main terminal 2

3 G gate

mb T2 mounting base; main

terminal 2

1 2

TO-220AB (SOT78)

sym051

6. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

BT136-600D TO-220AB plastic single-ended package; heatsink mounted; 1 mounting

hole; 3-lead TO-220AB

SOT78

BT136-600D/DG TO-220AB plastic single-ended package; heatsink mounted; 1 mounting

hole; 3-lead TO-220AB

SOT78

NXP Semiconductors BT136-600D

4Q Triac

Product data sheet 30 September 2013 3 / 13

7. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDRM repetitive peak off-state voltage - 600 V

IT(RMS) RMS on-state current full sine wave; Tmb ≤ 107 °C; Fig. 1;

Fig. 2; Fig. 3

- 4 A

full sine wave; Tj(init) = 25 °C;

tp = 20 ms; Fig. 4; Fig. 5

- 25 AITSM non-repetitive peak on-state

current

full sine wave; Tj(init) = 25 °C;

tp = 16.7 ms

- 27 A

I2tI2t for fusing tp = 10 ms; SIN - 3.1 A2s

IT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;

T2+ G+

- 50 A/µs

IT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;

T2+ G-

- 50 A/µs

IT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;

T2- G-

- 50 A/µs

dIT/dt rate of rise of on-state current

IT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;

T2- G+

- 10 A/µs

IGM peak gate current - 2 A

PGM peak gate power - 5 W

PG(AV) average gate power over any 20 ms period - 0.5 W

Tstg storage temperature -40 150 °C

Tjjunction temperature - 125 °C

NXP Semiconductors BT136-600D

4Q Triac

Product data sheet 30 September 2013 4 / 13

Tmb (°C)

- 50 1501000 50

003aae828

IT(RMS)

(A)

Fig. 1. RMS on-state current as a function of mounting

base temperature; maximum values

003aae830

IT(RMS)

(A)

surge duration (s)

10- 2 10110- 1

f = 50 Hz

Tmb ≤ 107 °C

Fig. 2. RMS on-state current as a function of surge

duration; maximum values

003aae827

Ptot

(W)

IT(RMS) (A)

0 542 31

)

α = 180°

120°

90°

60°

30°

α = conduction angle

a = form factor = IT(RMS) / IT(AV)

Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values

NXP Semiconductors BT136-600D

4Q Triac

Product data sheet 30 September 2013 5 / 13

003aae831

ITSM

(A)

number of cycles

1 104

103

10 102

j(init)

C m

f = 50 Hz

Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum

values

003aae829

tp(s)

10- 5 10- 1

10- 2

10- 4 10- 3

102

103

ITSM

(A)

j(init)

C m

(1)

(2)

tp ≤ 20 ms

(1) dIT/dt limit

(2) T2- G+ quadrant limit

Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values

NXP Semiconductors BT136-600D

4Q Triac

Product data sheet 30 September 2013 6 / 13

8. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

half cycle; Fig. 6 - - 3.7 K/WRth(j-mb) thermal resistance

from junction to

mounting base full cycle; Fig. 6 - - 3 K/W

Rth(j-a) thermal resistance

from junction to

ambient

in free air - 60 - K/W

003aae836

tp(s)

10- 5 1 1010- 1

10- 2

10- 4 10- 3

10- 1

Zth(j-mb)

(K/W)

10- 2

bidirectional

unidirectional

Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse width

NXP Semiconductors BT136-600D

4Q Triac

Product data sheet 30 September 2013 7 / 13

9. Characteristics

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

VD = 12 V; IT = 0.1 A; T2+ G+;

Tj = 25 °C; Fig. 7

- 2 5 mA

VD = 12 V; IT = 0.1 A; T2+ G-;

Tj = 25 °C; Fig. 7

- 2.5 5 mA

VD = 12 V; IT = 0.1 A; T2- G-;

Tj = 25 °C; Fig. 7

- 2.5 5 mA

IGT gate trigger current

VD = 12 V; IT = 0.1 A; T2- G+;

Tj = 25 °C; Fig. 7

- 5 10 mA

VD = 12 V; IG = 0.1 A; T2+ G+;

Tj = 25 °C; Fig. 8

- 1.6 10 mA

VD = 12 V; IG = 0.1 A; T2+ G-;

Tj = 25 °C; Fig. 8

- 4.5 15 mA

VD = 12 V; IG = 0.1 A; T2- G-;

Tj = 25 °C; Fig. 8

- 1.2 10 mA

ILlatching current

VD = 12 V; IG = 0.1 A; T2- G+;

Tj = 25 °C; Fig. 8

- 2.2 15 mA

IHholding current VD = 12 V; Tj = 25 °C; Fig. 9 - 1.2 10 mA

VTon-state voltage IT = 5 A; Tj = 25 °C; Fig. 10 - 1.4 1.7 V

VD = 12 V; IT = 0.1 A; Tj = 25 °C;

Fig. 11

- 0.7 1 VVGT gate trigger voltage

VD = 400 V; IT = 0.1 A; Tj = 125 °C;

Fig. 11

0.25 0.4 - V

IDoff-state current VD = 600 V; Tj = 125 °C - 0.1 0.5 mA

Dynamic characteristics

dVD/dt rate of rise of off-state

voltage

VDM = 402 V; Tj = 125 °C; RGT1 = 1 kΩ;

(VDM = 67% of VDRM); exponential

waveform

- 5 - V/µs

tgt gate-controlled turn-on

time

ITM = 6 A; VD = 600 V; IG = 0.1 A; dIG/

dt = 5 A/µs

- 2 - µs

NXP Semiconductors BT136-600D

4Q Triac

Product data sheet 30 September 2013 8 / 13

Tj(°C)

- 60 14090- 10 40

003aae833

(1)

(2)

(3)

(4)

(1)

(2)

(3)

(4)

IGT

IGT (25 °C)

(1) T2- G+

(2) T2- G-

(3) T2+ G-

(4) T2+ G+

Fig. 7. Normalized gate trigger current as a function of

junction temperature

Tj(°C)

- 60 14090- 10 40

003aae835

IL(25°C)

Fig. 8. Normalized latching current as a function of

junction temperature

Tj(°C)

- 60 14090- 10 40

003aae837

1.0

0.5

1.5

2.0

IH(25°C)

Fig. 9. Normalized holding current as a function of

junction temperature

VT(V)

0 321

003aae834

(A)

(1) (2) (3)

Vo = 1.27 V

Rs = 0.091 Ω

(1) Tj = 125 °C; typical values

(2) Tj = 125 °C; maximum values

(3) Tj = 25 °C; maximum values

Fig. 10. On-state current as a function of on-state

voltage

NXP Semiconductors BT136-600D

4Q Triac

Product data sheet 30 September 2013 9 / 13

Tj(°C)

- 60 14090- 10 40

003aae832

0.8

0.4

1.2

1.6

VGT

VGT (25 °C)

Fig. 11. Normalized gate trigger voltage as a function of junction temperature

NXP Semiconductors BT136-600D

4Q Triac

Product data sheet 30 September 2013 10 / 13

10. Package outline

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT78 SC-46

3-lead TO-220AB

SOT78

08-04-23

08-06-13

Notes

1. Lead shoulder designs may vary.

2. Dimension includes excess dambar.

UNIT A

mm 4.7

4.1

1.40

1.25

0.9

0.6

0.7

0.4

16.0

15.2

6.6

5.9

10.3

9.7

15.0

12.8

3.30

2.79

3.8

3.5

DIMENSIONS (mm are the original dimensions)

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB

0 5 10 mm

scale

b b1(2)

1.6

1.0

c D

1.3

1.0

b2(2) D1E e

2.54

L L1(1) L2(1)

max.

3.0

p q

3.0

2.7

2.6

2.2

1 2 3

L1(1)

b1(2)

(3×)

b2(2)

(2×)

e e

b(3×)

L2(1)

mounting

base

Fig. 12. Package outline TO-220AB (SOT78)

NXP Semiconductors BT136-600D

4Q Triac

Product data sheet 30 September 2013 11 / 13

11. Legal information

11.1 Data sheet status

Document

status [1][2]

Product

status [3]

Definition

Objective

[short] data

sheet

Development This document contains data from

the objective specification for product

development.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Product

[short] data

sheet

Production This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the Internet at URL http://www.nxp.com.

11.2 Definitions

Preview — The document is a preview version only. The document is still

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

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Characteristics sections of this document is not warranted. Constant or

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NXP Semiconductors BT136-600D

4Q Triac

Product data sheet 30 September 2013 12 / 13

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11.4 Trademarks

Notice: All referenced brands, product names, service names and

trademarks are the property of their respective owners.

Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,

FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,

ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,

QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,

TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

NXP Semiconductors BT136-600D

4Q Triac

Product data sheet 30 September 2013 13 / 13

12. Contents

1 General description ............................................... 1

2 Features and benefits ............................................1

3 Applications ........................................................... 1

4 Quick reference data ............................................. 1

5 Pinning information ............................................... 2

6 Ordering information ............................................. 2

7 Limiting values .......................................................3

8 Thermal characteristics .........................................6

9 Characteristics .......................................................7

10 Package outline ................................................... 10

11 Legal information .................................................11

11.1 Data sheet status ............................................... 11

11.2 Definitions ...........................................................11

11.3 Disclaimers .........................................................11

11.4 Trademarks ........................................................ 12

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 30 September 2013