Feb-04-2003
1
BA592/BA892...
Silicon RF Switching Diode
For band switching in TV/VTR tuners
and mobile applications
Very low forward resistance (typ. 0.45
@ 3 mA)
small capacitance
BA592
BA892/-02L
BA892-02V
1 2
Type Package Configuration LS(nH) Marking
BA592
BA892
BA892-02L
BA892-02V
SOD323
SCD80
TSLP-2-1
SC79
single
single
single, leadless
single
1.8
0.6
0.4
0.6
blue S
AA
AA
A
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage VR35 V
Forward current IF100 mA
Junction temperature Tj150 °C
Operating temperature range Top -55 ... 125
Storage temperature Tst
g
-55 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1)
BA592
BA892, BA892-02V
BA892-02L
RthJS
135
120
70
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
Feb-04-2003
2
BA592/BA892...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Reverse current
VR = 20 V
IR- - 20 nA
Forward voltage
IF = 100 mA
VF- - 1 V
AC Characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 3 V, f = 1 MHz
VR = 0 V, f = 100 MHz
CT
0.65
0.6
-
0.92
0.85
1
1.4
1.1
-
pF
Reverse parallel resistance
VR = 0 V, f = 100 MHz
RP- 100 - k
Forward resistance
IF = 3 mA, f = 100 MHz
IF = 10 mA, f = 100 MHz
rf
-
-
0.45
0.36
0.7
0.5
Charge carrier life time
IF = 10 mA, IR = 6 mA, measured at IR = 3mA,
RL = 100
rr - 120 - ns
I-region width WI- 3 - µm
Insertion loss1)
IF = 0.1 mA, f = 1 GHz
IF = 3 mA, f = 1 GHz
IF = 10 mA, f = 1 GHz
|S21|2
-
-
-
-0.1
-0.05
-0.04
-
-
-
dB
Isolation1)
VR = 0 V, f = 100 MHz
VR = 0 V, f = 470 MHz
VR = 0 V, f = 1 GHz
|S21|2
-
-
-
-23.5
-10.5
-5.5
-
-
-
1BA892-02L in series configuration, Z = 50
Feb-04-2003
3
BA592/BA892...
Diode capacitance CT =
(VR)
f = Parameter
0 5 10 15 20 V30
VR
0
0.4
0.8
1.2
pF
2
CT
1 MHz ... 1 GHz
Reverse parallel resistance RP =
(VR)
f = Parameter
0 5 10 15 20 V30
VR
-1
10
0
10
1
10
2
10
3
10
KOhm
Rp
100 MHz
1 GHz
Forward resistance rf =
(IF)
f = 100MHz
10 -2 10 -1 10 0 10 1 10 2
mA
IF
-1
10
0
10
1
10
2
10
Ohm
rf
Forward current IF =
(VF)
TA = Parameter
0 0.2 0.4 0.6 0.8 V1.2
VF
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
A
IF
-40 °C
25 °C
85 °C
125 °C
Feb-04-2003
4
BA592/BA892...
Insertion loss |S21|2 =
(f)
IF = Parameter
BA892-02L in series configuration, Z = 50
0 0.5 1 1.5 2 GHz 3
f
-0.4
-0.3
-0.2
dB
0
|S21|2
10 mA
3 mA
1 mA
0.1 mA
Isolation |S21|2 =
(f)
VR = Paramter
BA892-02L in series configuration, Z = 50
0 0.5 1 1.5 2 GHz 3
f
-30
-25
-20
-15
-10
dB
0
|S21|2
0 V
1 V
10 V
