Number: DB-222
August 2010, Revision A
Page 1
TAK CHEONG ®
SEMICONDUCTOR
200mW SOD-323 SURFACE MOUNT
Small Outline Flat Lead Plastic Package
Schottky Barrier Diode
Absolute Ma ximum Ra ti ng s TA = 25°C unless otherwise noted
Symbol Parameter Value Units
PD Power Dissipation 200 mW
TSTG Storage Temperature Range -65 to +125 °C
TJ Operating Junction Temperature +125 °C
Repetitive Peak Reverse Voltage SD103AWS 40 V
SD103BWS 30 V
VRM
SD103CWS 20 V
IF(AV) Average Forward Rectified Current 200 mA
IFSM Peak Forward Surge Current
(10uS square wave) 2 A
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
Low Forward Voltage Drop
Flat Lead SOD-323 Small Outline Plastic Package
Surface Device Type Mounting
RoHS Compliant
Green EMC
Matte Tin(Sn) Terminal Finish
Band Indicates Cathode
Weight: approx. 0.004g
DEVICE MARKING CODE:
Device Type Device Marking
SD103AWS JV
SD103BWS JW
SD103CWS JX
Electrical Characteristics TA = 25°C unless otherwise noted Limits
Symbol Parameter Test Condition Min Typ Max
Unit
IR
Reverse Leakage Current SD103AWS
SD103BWS
SD103CWS
VR=30V
VR=20V
VR=10V
--- --- 5 µA
VF Forward Voltage IF=20mA
IF=200mA --- ---
0.37
0.60 Volts
Ct Junction Capacitance VR=0V
f= 1MHz --- 50 --- pF
SD103AWS / SD103BWS / SD103CWS