TLP700 TOSHIBA Photocoupler IRED + Photo IC TLP700 Industrial inverters Inverter for air conditioners IGBT/Power MOSFET gate drive Unit: mm 4.580.25 * Guaranteed performance over temperature: -40 to 100C Supply current: 2.0 mA (max) * Power supply voltage: 15 to 30 V * Threshold input current: IFLH = 5 mA (max) * Switching time (tpLH / tpHL): 500 ns (max) * Common mode transient immunity: 15 kV/s (min) 5000 Vrms (min) * Isolation voltage: * UL-recognized: UL 1577, File No.E67349 * cUL-recognized: CSA Component Acceptance Service No.5A VDE-approved: File No.E67349 EN 60747-5-5 , EN 62368-1 (Note 1) 1.270.2 1.250.25 0.40.1 9.70.3 11-5J1 TOSHIBA 11-5J1S Pin Configuration (Top View) 1 6 2 5 3 SHIELD 4 1: ANODE 2: N.C 3: CATHODE 4: GND 5: VO ( OUTPUT ) 6: VCC Schematic Truth Table ICC VCC (M1) Input LED M1 M2 Output H ON ON OFF H OFF OFF ON +0.25 7.620.25 Weight: 0.26 g (t yp .) Note 1 : When a VDE approved type is needed, please designate the Option(D4). L 4.0 -0.20 3.65 +0.15 -0.25 2.0 A (max) * * 3 -0.05 Peak output current: 1 2 0.25 +0.10 * 4 6.80.25 TLP700 consists of an infrared emitting diode and an integrated photodetector. This unit is 6-lead SDIP package. The TLP700 is 50% smaller than the 8-pin DIP and meets the reinforced insulation class requirements of international safety standards. Therefore the mounting area can be reduced in equipment requiring safety standard certification. The TLP700 is suitable for gate driving circuits for IGBTs or power MOSFETs. In particular, the TLP700 is capable of "direct" gate driving of low-power IGBTs. 6 5 6 IF 1 IO VF (M2) 3 L VO 5 SHIELD GND 4 Note: A 0.1-F bypass capacitor must be connected between pins 6 and 4. Start of commercial production 2007-08 (c) 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-06-03 TLP700 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Forward current Forward current derating (Ta 85C) LED Peak transient forward current (Note 1) Reverse voltage Diode power dissipation Diode power dissipation derating (Ta 85 C) Junction temperature "H" peak output current Ta=-40 to 100 C (Note 2) Detector "L" peak output current Rating Unit IF 20 mA IF/Ta -0.54 mA/C IFP 1 A VR 5 V PD 40 mW PD/Ta -1.0 mW/C Tj 125 C IOPH -2.0 A IOPL 2.0 A Output voltage VO 35 V Supply voltage VCC 35 V Power dissipation PC 400 mW Junction temperature Tj 125 C Operating frequency (Note 3) Operating temperature range Storage temperature range f 50 kHz Topr -40 to 100 C Tstg -55 to 125 C Lead soldering temperature (10 s) (Note 4) Tsol 260 C Isolation voltage (AC, 60 s, R.H. 60 %) (Note 5) BVS 5000 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: A ceramic capacitor (0.1 F) should be connected from pin 6 to pin 4 to stabilize the operation of the high gain linear amplifier. Failure to provide the bypassing may impair the switching property. The total lead length between capacitor and coupler should not exceed 1 cm. Note 1: Pulse width PW 1 s, 300 pps Note 2: Exponential waveform pulse width PW 0.3 s, f 15 kHz Note 3: Exponential waveform IOPH -1.5 A ( 0.3 s), IOPL +1.5 A ( 0.3 s), Ta = 100 C Note 4: For the effective lead soldering area Note 5: Device considered a two-terminal device: pins 1, 2 and 3 paired with pins 4, 5 and 6 respectively. Recommended Operating Conditions Characteristics Input current, ON (Note 1) Input voltage, OFF Supply voltage (Note 2)(Note 3) Peak output current Operating temperature Symbol Min Typ. Max Unit IF (ON) 7.5 10 mA VF (OFF) 0 0.8 V VCC 15 30 V IOPH / IOPL 1.5 A Topr -40 100 C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Note 1: Input signal rise time (fall time) 0.5 s. Note 2: This item denotes operating ranges, not meaning of recommended operating conditions. Note 3: If the VCC rise slope is sharp, an internal circuit might not operate with stability. Please design the VCC rise slope under 3.0 V/s. (c) 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-06-03 TLP700 Electrical Characteristics (Ta = -40 to 100 C, unless otherwise specified) Symbol Test Circuit VF VF/Ta Input reverse current Input capacitance Characteristics Forward voltage Temperature coefficient of forward voltage "H" Level Min Typ. Max Unit IF = 10 mA, Ta = 25 C 1.57 1.75 V IF = 10 mA -1.8 mV/C IR VR = 5 V, Ta = 25 C 10 A CT V = 0 V, f = 1 MHz, Ta = 25 C 100 pF VCC = 15 V IF = 5 mA V6-5 = 3.5 V -1.4 -1.0 1 V6-5 = 7 V -1.5 VCC = 15 V IF = 0 mA V5-4 = 2.5 V 1.0 1.4 V5-4 = 7 V 1.5 13.7 IOPH1 Test Condition IOPH2 Output current (Note 1) "L" Level IOPL1 2 IOPL2 "H" Level VOH 3 VCC1=+15V, VEE1=-15V RL = 200, IF = 5 mA 11 VCC1=+15V, VEE1=-15V RL = 200, VF = 0.8 V -14.9 -12.5 IF = 10 mA 1.3 2.0 IF = 0 mA 1.3 2.0 Output voltage A V "L" Level VOL 4 "H" Level ICCH 5 "L" Level ICCL 6 VCC = 30 V VO=Open Threshold input current LH IFLH VCC = 15 V, VO > 1 V 1.8 5 mA Threshold input voltage HL VFHL VCC = 15 V, VO < 1 V 0.8 V VCC 15 30 V VUVLO+ VO > 2.5V, IF = 5 mA 11.0 12.5 13.5 V VUVLO- VO < 2.5V, IF = 5 mA 9.5 11.0 12.0 V UVLOHYS 1.5 V Supply current Supply voltage UVLO thresh hold UVLO hysteresis mA Note: All typical values are at Ta = 25C Note: This product is more sensitive than conventional products to electrostatic discharge (ESD) owing to its low power consumption design. It is therefore all the more necessary to observe general precautions regarding ESD when handling this component. Note 1: Duration of Io time 50 s, 1 pulse Isolation Characteristics (Ta = 25 C) Characteristic Symbol Capacitance input to output Test Condition CS Vs = 0 V, f = 1 MHz Isolation resistance RS R.H. 60 %, VS = 500 V Isolation voltage BVS AC, 60 s Note: Min Typ. Max Unit 1.0 pF 1x1012 1014 5000 Vrms Device considered a two-terminal device: pins 1, 2 and 3 paired with pins 4, 5 and 6 respectively. (c) 2019 Toshiba Electronic Devices & Storage Corporation 3 2019-06-03 TLP700 Switching Characteristics (Ta = -40 to 100 C, unless otherwise specified) Characteristics Propagation delay time Test Circuit Symbol LH tpLH HL tpHL Output rise time (10-90 %) tr 7 Test Condition VCC = 30 V Rg = 20 Cg = 10 nF Output fall time (90-10 %) tf Switching time dispersion between ON and OFF | tpHL-tpLH | Common mode transient immunity at HIGH level output CMH Common mode transient immunity at LOW level output CML 8 VCM =1000 Vp-p Ta = 25 C VCC = 30 V Min Typ. Max IF = 0 5 mA 50 500 IF = 5 0 mA 50 500 IF = 0 5 mA 50 IF = 5 0 mA 50 IF = 0 5 mA 250 IF = 5 mA VO (min) = 26 V -15 IF = 0 mA VO (max) = 1 V 15 Unit ns kV/s Note: All typical values are at Ta = 25 C. Test Circuit 1: IOPH 1 Test Circuit 2: IOPL 1 6 6 0.1F IOPL A V6-5 A IF IOPH 0.1F VCC VCC V5-4 3 3 4 Test Circuit 3: VOH 1 Test Circuit 4: VOL 1 6 0.1F IF RL V VOH 3 VCC1 4 6 IF 6 0.1F VF RL V VOL VEE1 3 Test Circuit 5: ICCH 1 4 VCC1 VEE1 4 Test Circuit 6: ICCL ICCH 1 6 ICCL A A 0.1F 0.1F VCC VCC 3 3 4 (c) 2019 Toshiba Electronic Devices & Storage Corporation 4 4 2019-06-03 TLP700 Test Circuit 7: tpLH, tpHL, tr, tf, | tpHL-tpLH | 0.1 F (f=25kHz, duty=50%, less than tr=tf=5ns) 6 1 IF IF VO Cg = 10nF Rg = 20 3 tr VOH tf VCC 90% 50% 10% VO 4 tpHL tpLH VOL Test Circuit 8: CMH, CML IF 1 6 VCM SW A 0.1F VO B 1000 V 90% 10% tr tf VCC * SW A: IF = 5 mA 4 3 VO VCM + CMH 26V - 1V CML * SW B: IF = 0 mA CMH = - CML = 800 V tf (s) 800 V tr (s) Note: CML (CMH) is the maximum rate of rise (fall) of the common mode voltage that can be sustained with the output voltage in the LOW (HIGH) state. (c) 2019 Toshiba Electronic Devices & Storage Corporation 5 2019-06-03 TLP700 VF/Ta IF IF VF -3.2 VF/Ta [mV/C] Ta=-40C Ta=25C Ta=100C 10 -2.8 -2.4 -2 Coefficient F o r w a r d C u r r e n t IF [mA] 100 1 -1.6 -1.2 0.1 1 1.2 1.4 1.6 1.8 0.1 2 1 F o r w a r d Vo l t a g e VF [V] F o r w a r d C u r r e n t IF [mA] VOL Ta VOH Ta 30 High Level Output Voltage VOH [V] Low Level Output Voltage VOL [V] -30 -25 VF=0.8V, RL=200 -20 VCC1=15V, VEE1=-15V -15 -10 VCC1=7.5V, VEE1=-7.5V -5 0 -40 -20 0 20 40 60 80 25 IF=5mA, RL=200 20 VCC1=15V, VEE1=-15V 15 10 VCC1=7.5V, VEE1=-7.5V 5 0 -40 -20 100 Ambient Temperature Ta [C] 0 IF=0mA VCC=30V 3 2 1 0 -40 -20 0 20 40 40 60 80 100 ICCH Ta High level supply current ICCH [mA] Low level supply current ICCL [mA] 4 20 Ambient Temperature Ta [C] ICCL Ta 5 10 60 80 Ambient Temperature Ta [C] 100 5 4 IF=10mA VCC=30V 3 2 1 0 -40 -20 0 20 40 60 80 100 Ambient Temperature Ta [C] NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. (c) 2019 6 2019-06-03 Toshiba Electronic Devices & Storage Corporation TLP700 IF=5mA, VCC=30V Rg=20, Cg=10nF 400 tpHL 300 200 tpLH 100 0 -40 -20 0 20 40 60 80 F g=20 Cg=10nF 300 tpHL 200 tpLH 100 0 15 20 25 30 Ambient Temperature Ta [C] Supply Voltage VCC [V] tpHL, tpLH IF IFLH Ta Threshold input current IFLH [mA] Rg=20, Cg=10nF tpLH 300 200 tpHL 100 6 8 10 12 14 16 18 20 4 IO=0mA 3 2 1 0 20 40 60 80 Forward current IF [mA] Ambient Temperature Ta [C] IOPL Ta IOPH Ta 5 IF=0mA, VCC=15V 4 V5-4=7.0V IOPL MAX V5-4=2.5V 1 0 -40 -20 VCC=15V, VO>1V 0 -40 -20 0 2 400 100 VCC=30V 400 3 500 I =5mA F I =5mA, R 5 500 4 Low Level Peak Output Current IOPL [A] Propagation delay time tpHL, tpLH [ns] 500 tpHL, tpLH VCC 0 20 40 60 80 Ambient Temperature Ta [C] 100 High Level Peak Output Current IOPH [A] Propagation delay time tpHL, tpLH [ns] Propagation delay time tpHL, tpLH [ns] tpHL, tpLH Ta 100 0 IF=5mA, VCC=15V V6-5=-3.5V -1 -2 IOPH MAX -3 V6-5=-7.0V -4 -5 -40 -20 0 20 40 60 80 100 Ambient Temperature Ta [C] NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. (c) 2019 7 2019-06-03 Toshiba Electronic Devices & Storage Corporation TLP700 V5-4 IOPL V6-5 IOPH 6 0 IF=0mA, VCC=15V Ta=100C 5 Ta=25C 4 IF=5mA, VCC=15V -1 Output Voltage V6-5 [V] Output Voltage V5-4 [V] 7 Ta=-40C 3 2 -2 Ta=-40C -3 -4 Ta=100C -5 Ta=25C -6 1 -7 0 0.5 1 1.5 2 Low Level Output Peak Current IOPL [A] 0 -0.5 -1 -1.5 -2 High Level Output Peak Current IOPH [A] Output Voltage VO(VUVLO) [V] VO(VUVLO)** - VCC 14 12 IF=5mA **Test Circuit : VO(VUVLO) - VCC UVLOHYS 10 1 6 8 6 +VUVLO VO IF -VUVLO VCC 4 3 2 0 5 10 15 4 20 Supply Voltage VCC [V] *: The above graphs show typical characteristics. NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. (c) 2019 8 2019-06-03 Toshiba Electronic Devices & Storage Corporation TLP700 Soldering and Storage (1) Precautions for Soldering The soldering temperature should be controlled as closely as possible to the conditions shown below, irrespective of whether a soldering iron or a reflow soldering method is used. 1) When Using Soldering Reflow The soldering temperature profile is based on the package surface temperature. (See the figure shown below, which is based on the package surface temperature.) An example of a temperature profile when Sn-Pb eutectic solder is used: (C) This profile is based on the device's maximum heat resistance guaranteed value. Set the preheat temperature/heating temperature to the optimum temperature corresponding to the solder paste type used by the customer within the described profile. An example of a temperature profile when lead(Pb)-free solder is used: (C) This profile is based on the device's maximum heat resistance guaranteed value. Set the preheat temperature/heating temperature to the optimum temperature corresponding to the solder paste type used by the customer within the described profile. Reflow soldering must be performed once or twice. The mounting should be completed with the interval from the first to the last mountings being 2 weeks. 2) When using soldering Flow (Applicable to both eutectic solder and Lead(Pb)-Free solder) Apply preheating of 150 C (package surface temperature) for 60 to 120 seconds. Mounting condition of 260 C or less within 10 seconds is recommended. Flow soldering must be performed once 3) When using soldering Iron (Applicable to both eutectic solder and Lead(Pb)-Free solder) Complete soldering within 10 seconds for lead temperature not exceeding 260 C or within 3 seconds not exceeding 350 C. Heating by soldering iron must be only once per 1 lead (c) 2019 Toshiba Electronic Devices & Storage Corporation 9 2019-06-03 TLP700 (2) Precautions for General Storage 1) Do not store devices at any place where they will be exposed to moisture or direct sunlight. 2) When transportation or storage of devices, follow the cautions indicated on the carton box. 3) The storage area temperature should be kept within a temperature range of 5 C to 35 C, and relative humidity should be maintained at between 45% and 75%. 4) Do not store devices in the presence of harmful (especially corrosive) gases, or in dusty conditions. 5) Use storage areas where there is minimal temperature fluctuation. Because rapid temperature changes can cause condensation to occur on stored devices, resulting in lead oxidation or corrosion, as a result, the solderability of the leads will be degraded. 6) When repacking devices, use anti-static containers. 7) Do not apply any external force or load directly to devices while they are in storage. 8) If devices have been stored for more than two years, even though the above conditions have been followed, it is recommended that solderability of them should be tested before they are used. (c) 2019 Toshiba Electronic Devices & Storage Corporation 10 2019-06-03 TLP700 Embossed-Tape Packing (TP) Specifications for SDIP6 Type Photocouplers 1. Applicable Package Package Name Product Type SDIP6 Photocouplers 2. Product Naming System Type of package used for shipment is denoted by a symbol suffix after a product number. The method of classification is as below. (Example) TLP700 (TP, F) [[G]]/RoHS COMPATIBLE (Note 1) Tape type Device name Note 1: Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 3. Tape Dimensions 3.1 Orientation of Devices in Relation to Direction of Tape Movement Device orientation in the recesses is as shown in Figure 1. Tape feed Figure 1 Device Orientation 3.2 Tape Packing Quantity: 1500 devices per reel 3.3 Empty Device Recesses Are as Shown in Table 1. Table 1 Empty Device Recesses Standard Occurrences of 2 or more successive empty device recesses Single empty device recesses 3.4 0 device 6 devices (max) per reel Remarks Within any given 40-mm section of tape, not including leader and trailer Not including leader and trailer Start and End of Tape: The start of the tape has 30 or more empty holes. The end of the tape has 30 or more empty holes and two empty turns only for a cover tape. (c) 2019 Toshiba Electronic Devices & Storage Corporation 11 2019-06-03 TLP700 3.5 (1) (2) Tape Specification Tape material: Plastic (protection against electrostatics) Dimensions: The tape dimensions are as shown in Figure 2 and Table 2. +0.1 0.4 0.05 1.5 -0 2.0 0.1 G K0 1.6 0.1 16.0 0.3 B D E F Unit: mm A 4.55 0.2 Figure 2 Tape Forms Table 2 Tape Dimension Unit: mm Unless otherwise specified: 0.1 Symbol Dimension Remark A 10.4 B 5.1 D 7.5 Center line of indented square hole and sprocket hole E 1.75 Distance between tape edge and hole center F 12.0 G 4.0 Cumulative error +0.1 per 10 feed holes -0.3 +0.1 Cumulative error -0.3 per 10 feed holes K0 4.1 Internal space (c) 2019 Toshiba Electronic Devices & Storage Corporation 12 2019-06-03 TLP700 3.6 Reel (1) (2) Material: Plastic Dimensions: The reel dimensions are as shown in Figure 3 and Table 3. Table 3 Reel Dimension E A C U B Unit: mm A 380 2 B 80 1 C 13 0.5 E 2.0 0.5 U 4.0 0.5 W1 17.5 0.5 W2 21.5 1.0 W1 W2 Figure 3 Reel Forms 4. Packing Packed in a shipping carton. 5. Label Indication The carton bears a label indicating the product number, the symbol representing classification of standard, the quantity, the lot number and the Toshiba company name. 6. Ordering Method When placing an order, please specify the product number, the tape type and the quantity as shown in the following example. (Example) TLP700 (TP, F) 1500 pcs Quantity (must be a multiple of 1500) [[G]]/RoHS COMPATIBLE (Note 1) Tape type Device name Note 1: Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. (c) 2019 Toshiba Electronic Devices & Storage Corporation 13 2019-06-03 TLP700 EN 60747-5-5 Option (D4) Specification Types : TLP700 Type designations for "option: (D4)", which are tested under EN 60747 requirements. Ex.: TLP700 (D4-TP,F) D4 : EN 60747 option TP : Standard tape & reel type F : [[G]]/RoHS COMPATIBLE (Note 1) Note: Use TOSHIBA standard type number for safety standard application. Ex.: TLP700 (D4-TP,F) TLP700 Note 1: Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. EN 60747 Isolation Characteristics Description Symbol Rating Unit Application classification for rated mains voltage 300Vrms for rated mains voltage 600Vrms I-IV I-III Climatic classification Pollution degree TLPxxx type Maximum operating insulation voltage 2 -- Vpk 1140 TLPxxx type 1424 Vpr TLPxxxFtype Vpk 1824 TLPxxx type Input to output test voltage, method B Vpr=1.875 x VIORM, 100 % production test tp=1 s, partial discharge < 5 pC 1670 Vpr TLPxxxFtype Highest permissible overvoltage (transient overvoltage, tpr = 60 s) Safety limiting values (max. permissible ratings in case of fault, also refer to thermal derating curve) current (input current IF, Psi = 0) power (output or total power dissipation) temperature VIO =500 V, Ta = 25 C VIO =500 V, Ta = 100 C VIO =500 V, Ta = Ts (c) 2019 Toshiba Electronic Devices & Storage Corporation -- 890 TLPxxxFtype Insulation resistance, 40/ 100 / 21 VIORM Input to output test voltage, method A Vpr=1.6 x VIORM, type and sample test tp=10 s, partial discharge<5 pC 14 -- Vpk 2140 VTR 8000 Vpk Isi Psi Ts 300 700 150 mA mW C Rsi 1012 1011 109 2019-06-03 TLP700 Insulation Related Specifications 7.62mm pitch TLPxxx type 10.16mm pitch TLPxxxF type Minimum creepage distance Cr 7.0mm 8.0mm Minimum clearance Cl 7.0mm 8.0mm Minimum insulation thickness ti 0.4mm CTI 175 Comperative tracking index 1. If a printed circuit is incorporated, the creepage distance and clearance may be reduced below this value. If this is not permissible, the user shall take suitable measures. 2. This photocoupler is suitable for `safe electrical isolation' only within the safety limit data. Maintenance of the safety data shall be ensured by means of protective circuits. Marking on product for EN 60747 : 4 Marking Example: 6 4 Lot.Code P700 Type name without "TL" 4 Mark for option(D4) 1 3 1pin indication (c) 2019 Toshiba Electronic Devices & Storage Corporation 15 2019-06-03 TLP700 Figure 1 Partial discharge measurement procedure according to EN 60747 Destructive test for qualification and sampling tests. Method A t1, t2 t3, t4 tp(Measuring time for partial discharge) tb tini Figure 2 VINITIAL(8kV) V (for type and sampling tests, destructive tests) Vpr(1424V for TLPxxx) (1824V for TLPxxxF) = 1 to 10 s =1s VIORM(890V for TLPxxx) (1140V for TLPxxxF) = 10 s = 12 s = 60 s 0 t1 tini t3 tP t2 tb Partial discharge measurement procedure according to EN 60747 Non-destructive test for100% inspection. Method B Vpr(1670V for TLPxxx) (2140V for TLPxxxF) V (for sample test,nondestructive test) t3, t4 tp(Measuring time for partial discharge) tb VIORM(890V for TLPxxx) (1140V for TLPxxxF) = 0.1 s =1s = 1.2 s Isi (mA) 3 t tP t3 Figure t t4 tb t4 Dependency of maximum safety ratings on ambient temperature 500 1000 400 800 300 600 Psi (mW) 400 200 Psi Isi 100 200 0 0 25 50 75 100 125 150 0 175 Ta (C) (c) 2019 Toshiba Electronic Devices & Storage Corporation 16 2019-06-03 TLP700 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA". Hardware, software and systems described in this document are collectively referred to as "Product". * TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. * PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT ("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, lifesaving and/or life supporting medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, and devices related to power plant. IF YOU USE PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. 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No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. * ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. * GaAs (Gallium Arsenide) is used in Product. GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or vapor. Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product. * Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. * Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS. https://toshiba.semicon-storage.com/ (c) 2019 Toshiba Electronic Devices & Storage Corporation 17 2019-06-03