TLP700
1 2019-06-03
© 2019
Toshiba Electronic Devices & Storage Corporation
TOSHIB A P hot ocoupler IRED + Photo IC
TLP700
Industrial inverters
Inverter for air conditioners
IGBT/Power MOSFET gate drive
TLP700 co nsi sts of an infrared emitting diode and an integrated photodetector.
This unit is 6-lead SDIP packa ge. The TLP700 is 50% smalle r than the 8-pin DIP
and meets the reinforced insulation class requirements of international safety
standards. Therefore the mounting area can be reduced in equipment requiring
safety standar d cert ifi cati on. The TLP 700 is suitable for gate driving circuits for
IGBTs or power MOSFETs. In particular, the TLP700 is capable of “direct” gate
driving of low-power IGBTs.
• Peak output current: ±2.0 A (max)
• Guaranteed performance over temperature: -40 to 100°C
• Supply current: 2.0 mA (max)
• Power supply voltage: 15 to 30 V
• Threshold input current: IFLH = 5 mA (max)
• Switching time (tpLH / tpHL): 500 ns (max)
• Common mode tran sie nt immunity: ±15 kV/μs (min)
• Isolation voltage: 5000 Vrms (min)
• UL-recognized: UL 15 77, Fil e No.E67349
• cUL-recognized: CSA Component Acceptance Service No.5A
File No.E67349
• VDE-approved: EN 60747-5-5 , EN 62368-1 (Note 1)
Note 1 : When a VDE approved type is needed,
please designate the Option(D4).
Truth Table
Input LED M1 M2 Output
H ON ON OFF H
L
OFF OFF ON L
Note: A 0.1-μF bypass capacitor must be connected
between pins 6 and 4.
Schematic
V
CC
GND
I
CC
(M1)
(
M2)
O
IF
1
＋
4
5
6
V
O
V
F
3
－
SHIELD
Unit: mm
Weight
: 0.26 g (typ.)
4.58±0.25
4.0 +0.25
-0.2
0
9.7±0.3
6.8±0.25
0.4±0.1
1.27±0.2 1.25±0.25
7.62±0.25
3.65
+0.15
-0.25
0.25
1 2 3
6 5 4
11
-5J1
TOSHIBA
11-5J1S
-
0.05
+0.10
Start of commercial production
2007-08
1
: ANODE
2
: N.C
3: CATHODE
4
: GND
5
: VO ( OUTPUT )
6
: VCC
1
3
4
5
6
2
SHIELD
Pin Configuration
(Top View)
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Toshiba Electronic Devices & Storage Corporation
Absolute Maximum Ratings (Ta = 25 °C)
Characteristics
Symbol
Rating
Unit
LED
Forward current
IF
20
mA
Forward current derati ng (Ta ≥ 85°C)
∆
IF/
∆
Ta
-0.54
mA/°C
Peak transi ent forward current (Note 1) I
FP
1 A
Reverse voltage V
R
5 V
Diode power dissipat i on PD 40 mW
Diode power dissipat i on derating (Ta
≥
85 °C)
∆
P
D
/∆Ta -1.0 mW/°C
Junction temperature
Tj
125
°C
Detector
“H” peak output current Ta=-40 to 100 °C
(Note 2) I
OPH
-2.0 A
“L” peak output current I
OPL
2.0 A
Output voltage V
O
35 V
Supply voltage
VCC
35
V
Power dissipation P
C
400 mW
Junction temperature T
j
125 °C
Operating frequency (Note 3) f 50 kHz
Operating tem perature range T
opr
-40 to 100 °C
Storage temperature range
Tstg
-55 to 125
°C
Lead soldering temperature (10 s) (Note 4)
Tsol
260
°C
Isolation voltage (AC, 60 s, R.H. ≤ 60 %) (Note 5) BV
S
5000 Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maxim um
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: A ceramic capacitor (0.1 μF) should be connected from pin 6 to pin 4 to stabilize the operation of the high
gain linear amplifier. Failure to provide the bypassing may impair the switching property.
The total lead length between capacitor and coupler should not exceed 1 cm.
Note 1: Pulse width PW ≤ 1 μs, 300 pps
Note 2: Exponential waveform pulse width PW ≤ 0.3 μs, f ≤ 15 kHz
Note 3: Exponential waveform IOPH ≥ -1.5 A (≤ 0.3 μs), IOPL ≤ +1.5 A (≤ 0.3 μs), Ta = 100 °C
Note 4: For the effective lead soldering area
Note 5: Device considered a two-terminal device: pins 1, 2 and 3 paired with pins 4, 5 and 6 respectively.
Recommended Operating Conditions
Characteristics Symbol Min Typ. Max Unit
Input current, ON (Note 1)
IF (ON)
7.5
―
10
mA
Input volt age, OFF V
F (OFF)
0 ― 0.8 V
Supply voltage (Note 2)(Note 3) V
CC
15 ― 30 V
Peak output current
IOPH / IOPL
―
―
±1.5
A
Operating tem perature
Topr
-40
―
100
°C
Note: Recom mended operating conditions are given as a design guideline to obtain expected performance of the device.
Additionally, each it em is an independent guideline respectively. In developing designs using thi s product, please
confirm specif ied char acteristics shown in this document.
Note 1: Input signal rise time (fall time) ≤ 0.5 μs.
Note 2: This item denotes operating ranges, not meaning of recommended operating conditi ons.
Note 3: If the VCC rise slope is sharp, an internal circuit might not operate with stability. Please design the VCC rise
slope under 3.0 V/μs.
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Toshiba Electronic Devices & Storage Corporation
Electrical Characteristics (Ta = -40 to 100 °C, unless otherwise specified)
Characteristics Symbol Test
Circuit
Test Condition Min Typ. Max Unit
Forward voltage VF ― IF = 10 mA, Ta = 25 °C ― 1.57 1.75 V
Temperature c oeffic i ent of forward
voltage ∆VF/∆Ta ― IF = 10 mA ― -1.8 ― mV/°C
Input reverse current IR ― VR = 5 V, Ta = 25 °C ― ― 10 μA
Input capacitance CT ― V = 0 V, f = 1 MHz, Ta = 25 °C ― 100 ― pF
Output current
(Note 1)
“H” Level IOPH1 1 VCC = 15 V
IF = 5 mA V6-5 = 3.5 V ― -1.4 -1.0
A
IOPH2 V6-5 = 7 V ― ― -1.5
“L” Level IOPL1 2 VCC = 15 V
IF = 0 mA V5-4 = 2.5 V 1.0 1.4 ―
IOPL2 V5-4 = 7 V 1.5 ― ―
Output voltage
“H” Level VOH 3 VCC1=+15V, VEE1=-15V
RL = 200Ω, IF = 5 mA 11 13.7 ―
V
“L” Level VOL 4 VCC1=+15V, VEE1=-15V
RL = 200Ω, VF = 0.8 V ― -14.9 -12.5
Supply current “H” Level ICCH 5 VCC = 3 0 V
VO=Open IF = 10 mA ― 1.3 2.0 mA
“L” Level ICCL 6 IF = 0 mA ― 1.3 2.0
Threshold input current L → H IFLH ― VCC = 15 V, VO > 1 V ― 1.8 5 mA
Threshold input volt age H → L VFHL ― VCC = 15 V, VO < 1 V 0.8 ― ― V
Supply voltage VCC ― ― 15 ― 30 V
UVLO t hresh hold VUVLO+ ― VO > 2.5V, IF = 5 mA 11.0 12.5 13.5 V
VUVLO- ― VO < 2. 5V, IF = 5 mA 9.5 11.0 12.0 V
UVLO hysteresis UVLOHYS ― ― ― 1.5 ― V
Note: All typical values are at Ta = 25°C
Note: This product is more sensitive than conventional products to electrostatic discharge (ESD) owing to its low
power consumption design . It is therefore all the more necessary to observe general precautions regarding
ESD when handling this component.
Note 1: Duration of Io time ≤ 50 μs, 1 pulse
Isolation Characteristics (Ta = 25 °C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Capacitanc e input to output CS Vs = 0 V, f = 1 MHz
― 1.0 ― pF
Isolation resist ance RS R.H. ≤ 60 %, VS = 500 V
1×10
12
10
14
― Ω
Isolation voltage BVS AC, 60 s 5000 ― ― Vrms
Note: Device considered a two-terminal device: pins 1, 2 and 3 paired with pins 4, 5 and 6 respectively.
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Toshiba Electronic Devices & Storage Corporation
Switching Characteristics (Ta = -40 to 100 °C, unless otherwise specified)
Characteristics Symbol Test
Circuit
Test Condition Min Typ. Max Unit
Propagation delay tim e L → H tpLH
7 VCC = 30 V
Rg = 20 Ω
Cg = 10 nF
IF = 0 → 5 mA 50 ― 500
ns
H → L tpHL IF = 5 → 0 mA 50 ― 500
Output rise time (10-90 %) tr IF = 0 → 5 mA ― 50 ―
Output fall time (90-10 %) tf IF = 5 → 0 mA ― 50 ―
Switching time dispersion
between ON and OFF
| tpHL-tpLH | IF = 0 ↔ 5 mA ― ― 250
Common mode transient immunity
at HIGH level output
CMH 8 VCM =1000 Vp-p
Ta = 25 °C
VCC = 30 V
IF = 5 mA
VO (min) = 26 V -15 ― ― kV/μs
Common mode transient immunity
at LOW level output
CML IF = 0 mA
VO (max) = 1 V 15 ― ―
Note: All typical values are at Ta = 25 °C.
Test Circuit 1: I
OPH
Test Circuit 2: I
OPL
Test Circuit 3: V
OH
Test Circuit 4: V
OL
Test Circuit 5: I
CCH
Test Circuit 6: I
CCL
A
IOPL
V
5-
4
VCC
1
3
4
6
0.1μF
A
IF
1
3
4
6
IOPH
V
6-
5
VCC
0.1
μF
VCC
A
ICCH
IF
1
3
4
6
0.1
μ
F
VCC
A
I
CCL
1
3
4
6
0.1
μ
F
V
CC1
V
VOH
IF
1
3
4
6
0.1
μ
F
V
EE1
R
L
VF
1
3
V
CC1
V
VOL
4
6
0.1
μ
F
V
EE1
R
L
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Test Circuit 7: tpLH, tpHL, tr, tf, | tpHL-tpLH |
Test Circuit 8: CMH, CML
Note: CML (CMH) is the maximum rate of rise (fall) of the common mode voltage that can be sustained with the output
voltage in the LOW (HIGH) state.
90%
1
0
%
1000 V
tf tr
26V
CMH
1V
CML
VO
•
SW A: IF = 5
mA
•
SW B: IF = 0
mA
CM
L
=
800 V
tr (μs)
CM
H = -
800 V
tf (μs)
VCC
1
3
4
6
0.1 μF
VO
Rg
= 20 Ω
Cg
= 10nF
IF
tpHL
IF
9
0
%
tf
50%
1
0
%
VO
tpLH
tr
VOH
VOL
1
6
IF
3
4
0.1
μ
F
VO
VCC
SW
A
B
+
-
V
CM
(f=25kHz, duty=50%, l ess than tr=tf=5ns)
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Toshiba Electronic Devices & Storage Corporation
IF
－
VF
∆V
F
/∆Ta
－
IF
VOL
－
Ta
Forward Voltage VF [V]
Ambient Temperature Ta [°C]
Forward Current
I
F
[mA]
Low Level Output Voltage
V
OL
[V]
Coefficient
∆
VF/
∆
Ta [mV/°C]
VOH
－
Ta
ICCL
－
Ta
ICCH
－
Ta
Forward Current IF [mA]
High Level Output Voltage
V
OH
[V]
Ambient Temperature Ta [°C]
Ambient Temperature Ta [°C] Ambient Temperature Ta [°C]
1 1.2 1.4 1.6 1.8 2
0.1
1
10
100
Ta=-40°C
Ta=25°C
Ta=100°C
0.1 1 10
-3.2
-2.8
-2.4
-2
-1.6
-1.2
-40 -20 0 20 40 60 80 100
-30
-25
-20
-15
-10
-5
0
VF=0.8V, RL=200Ω
VCC1=7.5V, VEE1=-7.5V
VCC1=15V, VEE1=-15V
-40 -20 0 20 40 60 80 100
0
5
10
15
20
25
30
IF=5mA, RL=200Ω
-40 -20 0 20 40 60 80 100
0
1
2
3
4
5
Low level supply current
I
CCL
[mA]
IF=0mA
VCC=30V
-40 -20 0 20 40 60 80 100
0
1
2
3
4
5
High level supply current
I
CCH
[mA]
IF=10mA
VCC=30V
VCC1=7.5V, VEE1=-7.5V
VCC1=15V, VEE1=-15V
NOTE: The above charact eristics curves are presented for reference only and not guaranteed by production test,
unless otherwise not ed.
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Toshiba Electronic Devices & Storage Corporation
-40 -20 0 20 40 60 80 100
0
1
2
3
4
5
Propagation delay tim e
tpHL, tpLH [ns]
Propagation
delay time tpHL, tpLH [ns]
tpHL, tpLH
－
Ta
tpHL, tpLH
－
VCC
tpHL, tpLH
－
IF
IFLH
－
Ta
IOPL
－
Ta
IOPH
－
Ta
Ambient Temperature Ta [°C] Supply Vol t age VCC [V]
Forward current
IF [mA]
Ambient Temperature Ta [°C]
Low Level Peak
Output Current I
OPL
[A]
Propagation delay tim e
tpHL, tpLH [ns]
Threshold input current
I
FLH
[mA]
High Level Peak Output Current
I
OPH
[A]
Ambient Temperature Ta [°C] Ambient Temperature Ta [°C]
I
F
=5mA
-40 -20 0 20 40 60 80 100
0
100
200
300
400
500
IF=5mA, VCC=30V
Rg=20Ω, Cg=10nF
tpHL
tpLH
15 20 25 30
0
100
200
300
400
500
tpHL
tpLH
IF=5mA, Rg=20Ω
Cg=10nF
4 6 8 10 12 14 16 18 20
0
100
200
300
400
500
VCC=30V
Rg=20Ω, Cg=10nF
VCC=15V, VO>1V
IO=0mA
-40 -20 0 20 40 60 80 100
0
1
2
3
4
5
I
OPL
MAX
IF=0mA, VCC=15V
V5-4=2.5V
V5-4=7.0V
tpLH
tpHL
-40 -20 0 20 40 60 80 100
-5
-4
-3
-2
-1
0
IF=5mA, VCC=15V
V6-5=-7.0V
V6-5=-3.5V
I
OPH
MAX
NOTE: The above charact eristics curves are presented for reference only and not guaranteed by production test,
unless otherwise not ed.
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Toshiba Electronic Devices & Storage Corporation
V5-4
－
IOPL
V6-5
－
IOPH
VO(VUVLO)** - VCC
Output Voltage
V
5-4
[V]
Output Voltage V
6-5
[V]
Output Voltage
VO(V
UVLO
)
[V]
Low Level Output Peak Current
IOPL [A]
High Level Output Peak Current
IOPH [A]
Supply Vol t age VCC [V]
0 0.5 1 1.5 2
1
2
3
4
5
6
7
-2-1.5-1-0.50
-7
-6
-5
-4
-3
-2
-1
0
IF=0mA, VCC=15V IF=5mA, VCC=15V
Ta=25°C
Ta=100°C
Ta=-40°C
Ta=100°C
Ta=-40°C
Ta=25°C
0 5 10 15 20
2
4
6
8
10
12
14
+VUVLO
-VUVLO
UVLOHYS
IF=5mA
VCC
1
3
4
6
IF
VO
**Test Circuit : VO(VUVLO) - VCC
*: The above graph s show typical charact er is tic s.
NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise not ed.
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Solder ing and Storage
(1) Precautions for Solder ing
The soldering temperature should be controlled as closely as possible to the conditions shown below, irrespective of
whether a soldering iron or a reflow soldering method is used.
1) When Using Soldering Ref l o w
The soldering temperature profile is based on the package surface temperature.
(See the figure shown below, which is based on the package surface temperature.)
An example of a temperature profile when Sn-Pb eutectic solder is used:
An example of a temperature profile when lead(Pb)-free solder is used:
Reflow soldering must be performed once or twice.
The mounting should be completed with the interval from the first to the last mountings being 2 weeks.
2) When using soldering Flow (Applicable to both eutectic solder and Lead(Pb)-Free sol der)
Apply preheating of 150 °C (p ack age surf ace tem perature) for 60 to 120 seconds.
Mounting condition of 260 °C or less wi thin 10 seconds is recommended.
Flow soldering must be performed once
3) When using soldering Iron (Applicable to both eutectic solder and Lead(Pb)-Free sol der)
Complete solder in g w ithin 10 s econds for lead temperature not exceeding 260 °C or within 3 seconds
not exceeding 350 °C.
Heating by soldering iron must be only once per 1 lead
This profile is based on the device’s
maximum heat resistance guaranteed
value.
Set the preheat temperature/heating
temperature to the optimum temperature
corresponding to the solder paste type
used by the customer within the
described profile.
(°C)
(°C)
This profile is based on the device’s
maximum heat resistance guaranteed
value.
Set the preheat temperature/heating
temperature to the optimum temperature
corresponding to the solder paste type
used by the customer within the
described profile.
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Toshiba Electronic Devices & Storage Corporation
(2) Precautions for General Storage
1) Do not store devices at any place where they will be exposed to moisture or dire ct sun lig ht.
2) When transportation or storage of devices, follow the cautions indicated on the carton box.
3) The storage area temperature should be kept within a temperature range of 5 °C to 35 °C,
and relative humidity should be maintained at between 45% and 75%.
4) Do not store devices in the presence of harmful (especially corrosive) ga ses , or in dusty cond itio ns.
5) Use storage areas where there is minimal temperature fluc tuation. Because rapid temperature
changes can cause condensation to occur on stored devices, resulting in lead oxidation or corrosion,
as a result, the solderability of the leads will be degraded.
6) When repacking devices, use anti-static cont ain er s.
7) Do not apply any external force or l oad directly to device s w hile they are in stora ge.
8) If devices have been stored for more than two years, even though the above conditions have been
followed, it is recommended that solderability of them should be tested before they are used.
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Toshiba Electronic Devices & Storage Corporation
Embossed-Tape Packing (TP) Specifications for SDIP6 Type Photocouplers
1. Applicabl e Package
Package Name Product Type
SDIP6 Photocouplers
2. Product Naming System
Type of package used for shipment is denoted by a symbol suffix after a product number. The method of
cl assification is as below.
(Example) TLP700 (TP, F)
[[G]]/RoHS COMPATIBLE (Note 1)
Tape type
Device name
Note 1: Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
3. Tape Di m ensi ons
3.1 Orientation of Devices in Relation to Direction of Tape Movement
Device orientation in the recesses is as shown in Figure 1.
Figure 1 Device Orientation
3.2 Tape Packing Quantity: 1500 devices per reel
3.3 Empty Device Recesses Are as Shown in Table 1.
Table 1 Empty Device Recesses
Standard Remarks
Occurrenc es of 2 or more
successi ve empty device
recesses 0 device Within any given 40-mm section of
tape, not including l eader and trailer
Single empty devic e
recesses 6 devices (m ax) per reel
Not including leader and trail er
3.4 Start and End of Tape:
The start of the tape has 30 or more empty holes. The end of the tape has 30 or more empty holes and
two empty turns only for a cover tape.
Tape feed
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3.5 Tape Specification
(1) Tape material: Plastic (protection against electrostatics)
(2) Dimensions: The tape dim ensions are as shown in Figure 2 and Table 2.
U nit: mm
Figure 2 Tape Forms
Table 2 Tape Dimension
Unit: mm
Unless otherwise s pecified: ±0.1
Symbol Dimension Remark
A 10.4
B 5.1
D 7.5 Center line of indented square hole and sprocket hole
E 1.75 Dist ance bet ween tape edge and hole center
F 12.0 Cumulative error per 10 feed holes
G 4.0 Cumul ative error per 10 feed holes
K0 4.1 Internal space
+0.1
-0.3
+0.1
-0.3
φ
1.6
±
0.1
2.0
±
0.1
D
B
E
F
G
16.0
±
0.3
φ
1.5
+0.1
-0
0.4 ± 0.05
4.55 ± 0.2
K0
A
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3.6 Reel
(1) Material: Plastic
(2) Dimensions: The reel dimensions are as shown in Figure 3 and Table 3.
Figure 3 Reel Forms
4. Packing
Packed in a s hipping carton.
5. Label Indication
The carton bears a label indicating the product number, the symbol representing classification of standard, the
quantity, the lot number and the Toshiba company name.
6. Ordering Method
When placing an order, please specify the product number, the tape type and the quantity as shown in the
following example.
(Example) TLP700 (TP, F) 1500 pcs
Quantity (must be a multiple of 1500)
[[G]]/RoHS COMPATIBLE (Note 1)
Tape type
Device name
Note 1: Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
記 号 寸 法
A φ380 ± 2
B φ80 ± 1
C φ13 ± 0.5
E 2.0 ± 0.5
U 4.0 ± 0.5
W1 17.5 ± 0.5
W2 21.5 ± 1.0
E
W1
W2
A
B
C
U
Table 3 Reel Dimension
Unit: mm
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EN 60747-5-5 Option (D4) Specification
Types : TLP700
Type designations for “option: (D4)”, which are tested under EN 60747 requirements.
Ex.: T LP700 (D4-TP,F) D4 : EN 60747 option
TP : Standard tape & reel type
F : [[G]]/RoHS COMPATIBLE (Note 1)
Note: Use TOSHIBA s tandard type number for safety standard application.
Ex.: T LP700 (D4-TP,F) → TLP700
Note 1: Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
EN 60747 Is olat ion Char acter i s ti cs
Description Symbol Rating Unit
Applicati on class ifi cation
for rated mains voltage ≤ 300Vrms
for rated mains voltage ≤ 600Vrms
I-IV
I-III
—
Climatic cl as sifi cation
40/ 100 / 21 —
Pollution degr ee 2 —
Maxim um operating insulation voltage TLPxxx type VIORM 890 Vpk
TLPxxxFtype 1140
Input to output test voltage, method A
Vpr=1.6 × VIORM, type and sample test
tp=10 s, partial discharge<5 pC
TLPxxx type Vpr 1424 Vpk
TLPxxxFtype 1824
Input to output test voltage, method B
Vpr=1.875 × VIORM, 100 % production test
tp=1 s, partial discharge < 5 pC
TLPxxx type Vpr 1670 Vpk
TLPxxxFtype 2140
Highest perm issible overvoltage
(transient overvoltage, t
pr
= 60 s) VTR 8000 Vpk
Safety limiting values (max. permissible ratings in case of
fault, also refer to thermal derating curve)
current (input current IF, Psi = 0)
power (output or total power dissipation)
temperature
Isi
Psi
Ts
300
700
150
mA
mW
°C
Insulation resistance, Rsi ≥1012
≥1011
≥109 Ω
=500 V, Ta = 25 °C
=500 V, Ta = 100 °C
=500 V, Ta = Ts
VIO
VIO
VIO
TLP700
15 2019-06-03
© 2019
Toshiba Electronic Devices & Storage Corporation
Insulation Related Specifications
1. If a printed circuit is incorporated, the creepage distanc e and clearance may be reduced below this value.
If this is not permissible, the user shall take suitable measures.
2. This photocoupler is suitable for ‘safe electrical isolation’ only within the safety limit data.
Maintenance of the safety data shall be ensured by means of protective circuits.
Marking on product for EN 60747 :
Marking Example:
7.62mm pitch
TLPxxx type
10.16mm pitch
TLPxxxF type
Minimum creep age dis tan ce Cr 7.0mm 8.0mm
Minimum clearance Cl 7.0mm 8.0mm
Minimum insulation thickness ti 0.4mm
Comperativ e track ing ind ex
CTI 175
4
Lot.Code
4
Mark for option(D4)
6
4
3
1
1pin indication
Type name without “TL”
P700
TLP700
16 2019-06-03
© 2019
Toshiba Electronic Devices & Storage Corporation
= 0.1 s
= 1 s
= 1.2 s
Figure
1 Partial discharge measurement procedure according to EN 60747
Destructive test for qualification and sampling tests.
Method A
(for type and sampling tests,
destructive tests)
t1, t2
t3, t4
tp(Measuring time for
partial discharge)
tb
tini
V
VINITIAL(8kV)
V
pr
(1424V for TLPxxx)
(1824V for TLPxxx F)
V
IORM(890V for TLPxxx)
(1140V for TLPxxx F)
0
t1
tini
t3
t2
tP
tb
t4
t
= 1 to 10 s
= 1 s
= 10 s
= 12 s
= 60 s
t
P
V
pr(1670V for TLPxxx)
(2140V for TLPxxxF)
V
IORM(890V for TLPxxx)
(1140V for TLPxxx F)
V
t
t
3
t4
tb
Figure 2 Partial discharge measurement procedure acc ording to EN 60747
Non-destructive test for100% inspection.
Method B
(for sample test,non-
destructive test)
t3, t4
tp(Measuring time for
partial discharge)
tb
500
400
300
200
100
0
0
25
50
75
100
125
150
175
1000
800
600
400
200
0
Ta (°C)
← Isi Psi
→
Isi
(mA)
Psi
(mW)
Figure
3 Dependency of maximum safety ratings on ambient temperature
TLP700
17 2019-06-03
© 2019
Toshiba Electronic Devices & Storage Corporation
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