SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996 FEATURES * 60 Volt Vegg PARTMARKING DETAIL - 762 2N7002 ABSOLUTE MAXIMUM RATINGS. sors PARAMETER SYMBOL ' VALUE UNIT Drain-Source Voltage Vos 60 yo | Continuous Drain Current at Ta ,=28C ty 116 mA Pulsed Drain Current lon, 800 mA / | Gate-Source Voltage Ves - +40 vy | Power Dissipation at T,,.,=25C Prot - 330 mW Operating and Storage Temperature Range | Ti:T stg -65 to +150 eo ELECTRICAL CHARACTERISTICS (at Tan) = 25C unless otherwise stated). PARAMETER SYMBOL |MIN. |MAX. |UNIT !CONDITIONS. Drain-Source Breakdown BV 5ss 60 iV In= TOHA, Vgg=0V Voltage i Gate-Source Threshold Vesitn 1 12.5 Voltage Gate-Body Leakage loss 10 nA Vest 20V, Vpg=0V zero Gate Voltage Drain loss 4 uA Vog=48V, VageDV Current B00 uA .Vg=48V, Vgge0V, T=128C(2 On-State Drain Current(1) Ibton) 500 MA |Vog=26V. Vgge10V Static Drain-Source On-State [Vosjon) 3.75 Vv Vgg= TOV, Ip=500mA Voltage (1) 376 mV iVese8V, ip=50mA Static Drain-Source On-State |Rocjony 75 Q Vgg= 1 0V, Ip=500mMA Resistance {1} 75 Q Vege5V, ip=50mA Forward Transconductance /9ts BO : MS |Vps=28V, lg=500MA 2) bo | Input Capacitance (2) Cigg 50 pF ; Common Source Output Cass 25 pF Voge 25V, Vag=0V, f= MHz Capacitance (2) oe Reverse Transfer Capacitance iC,,. 5 pF (2) _ a Turn-On Time (213) tons 20 ns |Vop=30V. Ip=200mA Turn-Off Time (21(3) thot 20 Ins Rg=25Q, Ri= 1800 (1) Measured under pulsed conditions. Width=300us. Duty cycle <2% (2) Sample test. {3) Switching times measured with 50Q source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device 3- 2