STPR2010CT thru STPR2020CT Ultra Fast Recovery Diodes A C A Dimensions TO-220AB A C A C(TAB) A B C D E F G H J K M N Q R A=Anode, C=Cathode, TAB=Cathode STPR2010CT STPR2020CT Symbol VRRM V 100 200 VRMS V 70 140 Dim. VDC V 100 200 Characteristics Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Maximum Ratings Unit I(AV) Maximum Average Forward Rectified Current @TC=95oC 20 A IFSM Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) 125 A @TJ=25oC @TJ=125oC @TJ=25oC @TJ=125oC 1.1 1.0 1.25 1.20 V @TJ=25oC @TJ=100oC 5 100 uA pF IF=10A IF=10A IF=20A IF=20A VF Maximum Forward Voltage At Pulse Width=300us 2% Duty Cycle IR Maximum DC Reverse Current At Rated DC Blocking Voltage CJ Typical Junction Capacitance Per Element (Note 1) 100 TRR Maximum Reverse Recovery Time (Note 2) 35 ROJC Typical Thermal Resistance (Note 3) 1.5 TJ, TSTG Operating And Storage Temperature Range -55 to +150 NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. 2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A. 3. Thermal Resistance Junction To Case. FEATURES MECHANICAL DATA * Glass passivated chip * Superfast switching time for high efficiency * Low forward voltage drop and high current capability * Low reverse leakage current * High surge capacity * Case: TO-220AB molded plastic * Polarity: As marked on the body * Weight: 0.08 ounces, 2.24 grams * Mounting position: Any ns o C/W o C STPR2010CT thru STPR2020CT Ultra Fast Recovery Diodes FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD CURRENT AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 20 15 10 5 RESISTIVE OR INDUCTIVE LOAD 0 25 50 75 100 125 150 150 125 100 75 50 25 Single Half-Sine-Wave (JEDEC METHOD) 0 175 1 2 5 CASE TEMPERATURE , C FIG.3 - TYPICAL REVERSE CHARACTERISTICS 20 50 100 FIG.4 - TYPICAL FORWARD CHARACTERISTICS 1000 100 INSTANTANEOUS FORWARD CURRENT ,(A) 100 TJ = 125 C 10 TJ = 100 C 1.0 0.1 TJ = 25 C .01 TJ = 125 C 10 TJ = 25 C 1.0 PULSE WIDTH 300us 300ua 2% Duty cycle 0.1 0 20 60 120 100 0 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) 0.2 0.4 0.6 FIG.5 - TYPICAL JUNCTION CAPACITANCE 100 TJ = 25 C, f= 1MHz 10 0.1 1 0.8 1.0 1.2 1.4 1.6 INSTANTANEOUS FORWARD VOLTAGE , VOLTS 1000 CAPACITANCE , (pF) INSTANTANEOUS REVERSE CURRENT ,(uA) 10 NUMBER OF CYCLES AT 60Hz 4 10 REVERSE VOLTAGE , VOLTS 100 1.8