STPR2010CT thru STPR2020CT
FEATURES
* Glass passivated chip
* Superfast switching time for high efficiency
* Low forward voltage drop and high current capability
* Low reverse leakage current
* High surge capacity
MECHANICAL DATA
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Milimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54 4.08
5.85 6.85
2.54 3.18
1.15 1.65
2.79 5.84
0.64 1.01
2.54 BSC
4.32 4.82
1.14 1.39
0.35 0.56
2.29 2.79
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Dimensions TO-220AB
STPR2010CT
STPR2020CT
VRRM
V
100
200
VRMS
V
70
140
VDC
V
100
200
A=Anode, C=Cathode, TAB=Cathode
Symbol Characteristics
I(AV) Maximum Average Forward Rectified Current @TC=95 C
IFSM
Maximum Forward Voltage At
Pulse Width=300us
2% Duty Cycle
IF=10A @TJ=25 C
IF=10A @TJ=125 C
IF=20A @TJ=25 C
IF=20A @TJ=125 C
VF
IRMaximum DC Reverse Current
At Rated DC Blocking Voltage @TJ=25 C
@TJ=100 C
CJTypical Junction Capacitance Per Element (Note 1)
TRR Maximum Reverse Recovery Time (Note 2)
Typical Thermal Resistance (Note 3)
TJ, TSTG Operating And Storage Temperature Range
Maximum Ratings
20
125
1.1
1.0
1.25
1.20
5
100
100
35
1.5
-55 to +150
A
A
V
Unit
uA
pF
ns
o
o
o
o
o
o
ROJC C/W
o
C
o
NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.
3. Thermal Resistance Junction To Case.
A
A
C
C(TAB)
A C A
o
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
Ultra Fast Recovery Diodes
STPR2010CT thru STPR2020CT
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CYCLES AT 60 Hz
PEAK FORWARD SURGE CURRENT,
AMPERES
1 5 10 50 100220
0
25
50
75
100
125
150
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AM PERES
25
75 100 125 150
5
050
20
175
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG.3 - TY PICAL REVERSE CHARACTERISTICS
INSTANTANEOUS
REVERSE CURRENT ,(uA)
20 120
0
.01
1.0
10
1000
100
60 100
TJ= 100 C
0.1
TJ= 25 C
Single Half-Sine-Wave
(JEDEC METHOD)
15
0
10
RESI S TIVE OR INDUCTIVE LOA D
INSTANTANEOUS FO RWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL F O RWARD CHARACTERISTICS
INSTANTANEOUS FO RWARD CURRENT ,(A)
0.2 0.4 1.2 1.4
1.0
10
100
0.6 0.8 1.0
0.1 1.8
1.6
PULSE WIDTH 300ua
INSTANTANEOUS FO RWARD VOLTAGE , VOLTS
INSTANTANEOUS FO RWARD CURRENT ,(A)
0
1.0
10
100
0.1
PULSE WIDTH 300us
2% Duty cycle
TJ= 25 C
FIG.5 - TYPICAL JUNCTI ON CAPACIT ANCE
CAPACITAN C E , ( pF)
REVERS E VOLTAGE , VO LTS
10
1100
1000
100
10 0.1
CASE TEMPERA TURE , C
TJ= 125 C TJ= 125 C
4
TJ= 25 C, f= 1MHz
Ultra Fast Recovery Diodes