IGBT MODULE
MODULE MODULE
MODULE Dual 150A 1200V
Dual 150A 1200VDual 150A 1200V
Dual 150A 1200V
PDMB150B12
PDMB150B12PDMB150B12
PDMB150B12
CIRCUIT OUTLINE DRAWING
MAXMUM RATINGS (Tc=25°C)
Item Symbol PDMB150B12 Unit
Collector-Emitter Voltage VCES 1200 V
Gate - Emitter Voltage VGES +/ - 20 V
DC IC 150
Collector Current 1 ms ICP 300
A
Collector Power Dissipation PC 730 W
Junction Temperature Range Tj -40 to +150 °C
Storage Temperature Range Tstg -40 to +125 °C
Isolation Voltage Terminal to Base AC, 1 min.) VISO 2500 V
Module Base to Heatsink 3
Mounting Torque Bus Bar to Main Termin als FTOR 2 N•m
ELECTRICAL CHARACTERISTICS (Tc=25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector-Emitter Cut-Off Current ICES V
CE=1200V,VGE=0V - - 3.0
mA
Gate-Emitter Leakage Current IGES V
GE=+/- 20V,VCE=0V - - 1.0
µA
Collector-Emitter Saturation Voltage VCE(sat) I
C=150A,VGE=15V - 1.9 2.4
V
Gate-Emitter Threshold Voltage VGE(th) V
CE=5V,IC=150mA 4.0 - 8.0
V
Input Capacitance Cies VCE=10V,VGE=0V,f=1MHz - 12600 -
pF
Rise Time tr - 0.25 0.45
Turn-on Time ton - 0.40 0.70
Fall Time tf - 0.25 0.35
Switching Time
Turn-off Time toff
VCC= 600V
RL= 4 ohm
RG= 3.6 ohm
VGE= +/- 15V - 0.80 1.10
µs
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C)
Item Symbol Rated Value Unit
DC IF 150
Forward Current 1 ms IFM 300
A
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Peak Forward Voltage VF I
F=150A,VGE=0V - 1.9 2.4
V
Reverse Recovery Time trr IF=150A,VGE=-10V,di/dt=300A/µs - 0.2 0.3
µs
THERMAL CHARACTERISTICS
Characteristic Symbol Test Condition Min. Typ. Max. Unit
IGBT - - 0.16
Thermal Impedance DIODE Rth(j-c) Junction to Case - - 0.32
°C/W
4- fasten- tab No 110
Dimension(mm)
A
pproximate Weight : 500
g
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PDMB150B12
0246810
0
50
100
150
200
250
300
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(A)
Fig.1- Output Characteristics
(Typical)
TC=25℃
10V
9V
12V
15V
VGE =20V
8V
7V
048121620
0
2
4
6
8
10
12
14
16
Gate to Emitter Voltage VGE
(V)
Collector to Emitter Voltage V CE
(V)
Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage
(Typical)
TC=25℃
150A
IC=75A 300A
048121620
0
2
4
6
8
10
12
14
16
Gate to Emitter Voltage VGE
(V)
Collector to Emitter Voltage V CE
(V)
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage
(Typical)
IC=75A
150A
300A
TC=125℃
0
2
4
6
8
10
12
14
16
0 150 300 450 600 750 900 1050 1200
0
100
200
300
400
500
600
700
800
Total Gate Charge Qg
(nC)
Collector to Emitter Voltage V
CE
(V)
Gate to Emitter Voltage V
GE
(V)
Fig.4- Gate Charge vs. Collector to Emitter Voltage
(Typical)
VCE=600V
400V
200V
RL=4Ω
TC=25℃
0.1 0.2 0.5 1 2 5 10 20 50 100 200
50
100
200
500
1000
2000
5000
10000
20000
50000
Collector to Emitter Voltage V
CE
(V)
Capacitance C
(pF)
Fig.5- Capacitance vs. Collector to Emitter Voltage
(Typical)
Cies
Coe s
Cres
VGE =0V
f=1MHZ
TC=25℃
0 25 50 75 100 125 150
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Collector Current I
C
(A)
Switching Time t
(μs)
Fig.6- Collector Current vs. Switching Time
(Typical)
tOFF
tf
tr
tON
VCC=600V
RG= 3.0 Ω
VGE =±15V
TC=25℃
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PDMB150B12
1 2 5 10 20 50 100 200
0.05
0.1
0.2
0.5
1
2
5
10
Series Gate Impedance R
G
(Ω)
Switching Time t
(μs)
Fig.7- Series Gate Impedance vs. Switching Time
(Typical)
VCC=600V
IC=150A
VGE=±15V
TC=25℃
tf
tr
ton
toff
01234
0
50
100
150
200
250
300
Forward Voltage V
F
(V)
Forward Current I
F
(A)
Fig.8- Forward Characteristics of Free Wheeling Diode
(Typical)
TC=25℃TC=125℃
0 150 300 450 600 750 900
2
5
10
20
50
100
200
500
-di/dt
(A/μs)
Peak Reverse Recovery Current I
RrM
(A)
Reverse Recovery Time trr
(ns)
Fig.9- Reverse Recovery Characteristics
(Typical)
IRrM
trr
IF=150A
TC=25℃
0 400 800 1200 1600
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(A)
Fig.10- Reverse Bias Safe Operating Area
(Typical)
RG=3.0Ω
VGE =±15V
TC≦125℃
10
-5
10
-4
10
-3
10
-2
10
-1
110
1
1x10
-3
2x10
-3
5x10
-3
1x10
-2
2x10
-2
5x10
-2
1x10
-1
2x10
-1
5x10
-1
1
Time t
(s)
Transient Thermal Impedance Rth
(J-C) (℃/W)
Fig.11- Transient Thermal Impedance
TC=25℃
1 Shot Pulse
FRD
IGBT
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