STW72N60DM2AG Automotive-grade N-channel 600 V, 0.037 typ., 66 A MDmeshTM DM2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STW72N60DM2AG 600 V 0.042 66 A 446 W 3 2 1 TO-247 AEC-Q101 qualified Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Figure 1: Internal schematic diagram Applications D(2, TAB) Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmeshTM DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. G(1) S(3) AM01476v1_tab Table 1: Device summary Order code Marking Package Packing STW72N60DM2AG 72N60DM2 TO-247 Tube October 2016 DocID027314 Rev 5 This is information on a product in full production. 1/12 www.st.com Contents STW72N60DM2AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 5 2/12 TO-247 package information ............................................................. 9 Revision history ............................................................................ 11 DocID027314 Rev 5 STW72N60DM2AG 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit Gate-source voltage 25 V Drain current (continuous) at Tcase = 25 C 66 Drain current (continuous) at Tcase = 100 C 42 IDM(1) Drain current (pulsed) 264 A PTOT W VGS ID Total dissipation at Tcase = 25 C 446 dv/dt(2) Peak diode recovery voltage slope 50 dv/dt(3) MOSFET dv/dt ruggedness 50 Tstg Storage temperature range Tj Junction temperature range A V/ns -55 to 150 C Notes: (1) Pulse width is limited by safe operating area. (2) ISD 66 A, di/dt=800 A/s; VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS. (3) VDS 480 V. Table 3: Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient Value Unit 0.28 C/W 50 Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 10 A EAS Single pulse avalanche energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) 1500 mJ DocID027314 Rev 5 3/12 Electrical characteristics 2 STW72N60DM2AG Electrical characteristics (Tcase = 25 C unless otherwise specified) Table 5: Static Symbol Parameter Test conditions V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Min. Typ. Max. 600 Unit V VGS = 0 V, VDS = 600 V 10 VGS = 0 V, VDS = 600 V, Tcase = 125 C(1) 100 Gate-body leakage current VDS = 0 V, VGS = 25 V 5 A VGS(th) Gate threshold voltage VDS = VGS, ID = 250 A 4 5 V RDS(on) Static drain-source onresistance VGS = 10 V, ID = 33 A 0.037 0.042 Min. Typ. Max. Unit - 5508 - - 241 - - 2.8 - IDSS Zero gate voltage drain current IGSS 3 A Notes: (1)Defined by design, not subject to production test. Table 6: Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 470 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 2 - Qg Total gate charge - 121 - Qgs Gate-source charge - 26 - Qgd Gate-drain charge VDD = 480 V, ID = 66 A, VGS = 10 V (see Figure 15: "Test circuit for gate charge behavior") - 61 - VDS = 100 V, f = 1 MHz, VGS = 0 V pF nC Notes: (1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 7: Switching times Symbol td(on) tr td(off) tf 4/12 Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 300 V, ID = 33 A RG = 4.7 , VGS = 10 V (see Figure 14: "Test circuit for resistive load switching times" and Figure 19: "Switching time waveform") DocID027314 Rev 5 Min. Typ. Max. - 32 - - 67 - - 112 - - 10.4 - Unit ns STW72N60DM2AG Electrical characteristics Table 8: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 66 A ISDM(1) Source-drain current (pulsed) - 264 A VSD(2) Forward on voltage VGS = 0 V, ISD = 66 A - 1.6 V trr Reverse recovery time - 150 ns Qrr Reverse recovery charge - 0.75 C IRRM Reverse recovery current ISD = 66 A, di/dt = 100 A/s, VDD = 480 V (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 10.5 A ISD = 66 A, di/dt = 100 A/s, VDD = 480 V, Tj = 150 C (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 250 ns - 2.5 C - 20.7 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Notes: (1) Pulse width is limited by safe operating area. (2) Pulse test: pulse duration = 300 s, duty cycle 1.5%. DocID027314 Rev 5 5/12 Electrical characteristics 2.1 STW72N60DM2AG Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance d d t Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance 6/12 DocID027314 Rev 5 STW72N60DM2AG Electrical characteristics Figure 8: Capacitance variations Figure 10: Normalized on-resistance vs temperature Figure 12: Output capacitance stored energy Figure 9: Normalized gate threshold voltage vs temperature Figure 11: Normalized V(BR)DSS vs temperature Figure 13: Source- drain diode forward characteristics DocID027314 Rev 5 7/12 Test circuits 3 STW72N60DM2AG Test circuits Figure 15: Test circuit for gate charge behavior Figure 14: Test circuit for resistive load switching times Figure 16: Test circuit for inductive load switching and diode recovery times Figure 17: Unclamped inductive load test circuit Figure 18: Unclamped inductive waveform 8/12 DocID027314 Rev 5 Figure 19: Switching time waveform STW72N60DM2AG 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK (R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. 4.1 TO-247 package information Figure 20: TO-247 package outline DocID027314 Rev 5 9/12 Package information STW72N60DM2AG Table 9: TO-247 package mechanical data mm Dim. Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 10/12 Typ. 5.45 5.60 18.50 OP 3.55 OR 4.50 S 5.30 DocID027314 Rev 5 3.65 5.50 5.50 5.70 STW72N60DM2AG 5 Revision history Revision history Table 10: Document revision history Date Revision 27-Jan-2015 1 First release. 2 Text edits and formatting changes throughout document Removed TO-247 long leads package data Added Section 2.1 Electrical characteristics (curves) 01-Jul-2015 3 Text edits and formatting changes throughout document On cover page: - updated title and features In Section Electrical ratings: - updated Table Absolute maximum ratings In Section Electrical characteristics: - updated Tables Static, Dynamic, Switching times and Sourcedrain diode Updated Section Electrical characteristics (curves) 09-Dec-2015 4 Updated Table 4: "Avalanche characteristics". 24-Oct-2016 5 Updated title and features in cover page. Minor text changes. 14-Apr-2015 Changes DocID027314 Rev 5 11/12 STW72N60DM2AG IMPORTANT NOTICE - PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST's terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers' products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. (c) 2016 STMicroelectronics - All rights reserved 12/12 DocID027314 Rev 5