October 2016
DocID027314 Rev 5
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This is information on a product in full production.
www.st.com
STW72N60DM2AG
Automotive-grade N-channel 600 V, 0.037 Ω typ., 66 A
MDmesh™ DM2 Power MOSFET in a TO-247 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS
RDS(on)
max.
ID
PTOT
STW72N60DM2AG
600 V
0.042 Ω
66 A
446 W
AEC-Q101 qualified
Fast-recovery body diode
Extremely low gate charge and input
capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Table 1: Device summary
Order code
Marking
Package
Packing
STW72N60DM2AG
72N60DM2
TO-247
Tube
TO-247
123
D(2,TAB)
G(1)
S(3) AM01476v1_tab
Contents
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Contents
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package information ....................................................................... 9
4.1 TO-247 package information ............................................................. 9
5 Revision history ............................................................................ 11
STW72N60DM2AG
Electrical ratings
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1 Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate-source voltage
±25
V
ID
Drain current (continuous) at Tcase = 25 °C
66
A
Drain current (continuous) at Tcase = 100 °C
42
IDM(1)
Drain current (pulsed)
264
A
PTOT
Total dissipation at Tcase = 25 °C
446
W
dv/dt(2)
Peak diode recovery voltage slope
50
V/ns
dv/dt(3)
MOSFET dv/dt ruggedness
50
Tstg
Storage temperature range
-55 to 150
°C
Tj
Junction temperature range
Notes:
(1) Pulse width is limited by safe operating area.
(2) ISD ≤ 66 A, di/dt=800 A/μs; VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS.
(3) VDS ≤ 480 V.
Table 3: Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case
0.28
°C/W
Rthj-amb
Thermal resistance junction-ambient
50
Table 4: Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)
10
A
EAS
Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
1500
mJ
Electrical characteristics
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2 Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5: Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
600
V
IDSS
Zero gate voltage drain
current
VGS = 0 V, VDS = 600 V
10
µA
VGS = 0 V, VDS = 600 V,
Tcase = 125 °C(1)
100
IGSS
Gate-body leakage
current
VDS = 0 V, VGS = ±25 V
±5
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
3
4
5
V
RDS(on)
Static drain-source on-
resistance
VGS = 10 V, ID = 33 A
0.037
0.042
Ω
Notes:
(1)Defined by design, not subject to production test.
Table 6: Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0 V
-
5508
-
pF
Coss
Output capacitance
-
241
-
Crss
Reverse transfer
capacitance
-
2.8
-
Coss eq.(1)
Equivalent output
capacitance
VDS = 0 to 480 V, VGS = 0 V
-
470
-
pF
RG
Intrinsic gate resistance
f = 1 MHz open drain
-
2
-
Ω
Qg
Total gate charge
VDD = 480 V, ID = 66 A,
VGS = 10 V (see Figure 15: "Test
circuit for gate charge behavior")
-
121
-
nC
Qgs
Gate-source charge
-
26
-
Qgd
Gate-drain charge
-
61
-
Notes:
(1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.
Table 7: Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = 300 V, ID = 33 A
RG = 4.7 Ω, VGS = 10 V (see
Figure 14: "Test circuit for
resistive load switching times"
and Figure 19: "Switching time
waveform")
-
32
-
ns
tr
Rise time
-
67
-
td(off)
Turn-off delay time
-
112
-
tf
Fall time
-
10.4
-
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Electrical characteristics
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Table 8: Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
66
A
ISDM(1)
Source-drain current
(pulsed)
-
264
A
VSD(2)
Forward on voltage
VGS = 0 V, ISD = 66 A
-
1.6
V
trr
Reverse recovery time
ISD = 66 A, di/dt = 100 A/µs,
VDD = 480 V (see Figure 16:
"Test circuit for inductive load
switching and diode recovery
times")
-
150
ns
Qrr
Reverse recovery charge
-
0.75
µC
IRRM
Reverse recovery current
-
10.5
A
trr
Reverse recovery time
ISD = 66 A, di/dt = 100 A/µs,
VDD = 480 V, Tj = 150 °C (see
Figure 16: "Test circuit for
inductive load switching and
diode recovery times")
-
250
ns
Qrr
Reverse recovery charge
-
2.5
µC
IRRM
Reverse recovery current
-
20.7
A
Notes:
(1) Pulse width is limited by safe operating area.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
Electrical characteristics
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2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage
Figure 7: Static drain-source on-resistance
d
d t
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Electrical characteristics
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Figure 8: Capacitance variations
Figure 9: Normalized gate threshold voltage vs
temperature
Figure 10: Normalized on-resistance vs temperature
Figure 11: Normalized V(BR)DSS vs temperature
Figure 12: Output capacitance stored energy
Figure 13: Source- drain diode forward
characteristics
Test circuits
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3 Test circuits
Figure 14: Test circuit for resistive load
switching times
Figure 15: Test circuit for gate charge
behavior
Figure 16: Test circuit for inductive load
switching and diode recovery times
Figure 17: Unclamped inductive load test
circuit
Figure 18: Unclamped inductive waveform
Figure 19: Switching time waveform
STW72N60DM2AG
Package information
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4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
4.1 TO-247 package information
Figure 20: TO-247 package outline
Package information
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Table 9: TO-247 package mechanical data
Dim.
mm
Min.
Typ.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
5.45
5.60
L
14.20
14.80
L1
3.70
4.30
L2
18.50
ØP
3.55
3.65
ØR
4.50
5.50
S
5.30
5.50
5.70
STW72N60DM2AG
Revision history
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5 Revision history
Table 10: Document revision history
Date
Revision
Changes
27-Jan-2015
1
First release.
14-Apr-2015
2
Text edits and formatting changes throughout document
Removed TO-247 long leads package data
Added Section 2.1 Electrical characteristics (curves)
01-Jul-2015
3
Text edits and formatting changes throughout document
On cover page:
- updated title and features
In Section Electrical ratings:
- updated Table Absolute maximum ratings
In Section Electrical characteristics:
- updated Tables Static, Dynamic, Switching times and Source-
drain diode
Updated Section Electrical characteristics (curves)
09-Dec-2015
4
Updated Table 4: "Avalanche characteristics".
24-Oct-2016
5
Updated title and features in cover page.
Minor text changes.
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