
UCC28019
SLUS755 – APRIL 2007
ELECTRICAL CHARACTERISTICS (continued)Unless otherwise noted, VCC = 15 V
DC
, 0.1 µF from VCC to GND, -40°C ≤T
J
= T
A
≤125°C. All voltages are with respect toGND. Currents are positive into and negative out of the specified terminal.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Current Loop
gmi Transconductance gain T
A
= 25°C 0.75 0.95 1.15 mSOutput linear range ±50 µAICOMP voltage during OLP VSENSE = 0.5 V 3.7 4.0 4.3 V
Voltage Loop
V
REF
Reference voltage -40°C ≤T
A
≤125°C 4.90 5.00 5.10 Vgmv Transconductance gain 31.5 42 52.5 µSMaximum sink current under normal
VSENSE = 6 V, VCOMP = 4 V 21 30 38operation
Source current under soft start VSENSE = 4 V, VCOMP = 0 V –21 -30 -38
µAVSENSE = 4 V, VCOMP = 0 V –100 –170 –250Maximum source current under EDRoperation
VSENSE = 4 V, VCOMP = 4 V –60 –100 –140Enhanced dynamic response, V
SENSE
4.63 4.75 4.87 Vlow threshold, fallingV
SENSE
input bias current 1 V ≤VSENSE ≤5 V 100 250 nAV
COMP
voltage during OLP VSENSE = 0.5 V, I
VCOMP
= 0.5 mA 0 0.2 0.4 V
GATE Driver
GATE current, peak, sinking
(1)
C
GATE
= 4.7 nF 2.0
AGATE current, peak, sourcing
(1)
C
GATE
= 4.7 nF –1.5GATE rise time C
GATE
= 4.7 nF, GATE = 2 V to 8 V 40 60
nsGATE fall time C
GATE
= 4.7 nF, GATE = 8 V to 2 V 25 40GATE low voltage, no load GATE = 0 A 0 0.05GATE low voltage, sinking GATE = 20 mA 0.3 0.8GATE low voltage, sourcing GATE = -20 mA –0.3 –0.8GATE low voltage, sinking VCC = 5 V, GATE = 5 mA 0.2 0.75 1.2
VGATE low voltage, sinking VCC = 5 V, GATE = 20 mA 0.2 0.9 1.5GATE high voltage VCC = 20 V, C
GATE
= 4.7 nF 11 12.5 14GATE high voltage VCC = 11 V, C
GATE
= 4.7 nF 9.5 10.5 11.0VCC = VCC
OFF
+ 0.2 V,GATE high voltage 8.0 9.0 10.2C
GATE
= 4.7 nF
(1) Not tested. Characterized by design.
4
Submit Documentation Feedback