2
RF Device Data
Freescale Semiconductor, Inc.
A2T07D160W04SR3
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS –0.5, +70 Vdc
Gate--Source Voltage VGS –6.0, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg –65 to +150 C
Case Operating Temperature Range TC–40 to +125 C
Operating Junction Temperature Range (1,2) TJ–40 to +225 C
CW Operation @ TC=25C
Derate above 25C
CW 94
0.87
W
W/C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 77C, 30 W W--CDMA, 28 Vdc, IDQA = 450 mA, VGSB = 1.2 Vdc, 780 MHz
RJC 0.63 C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2
Machine Model (per EIA/JESD22--A115) A
Charge Device Model (per JESD22--C101) IV
Table 4. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics (4,5)
Zero Gate Voltage Drain Leakage Current
(VDS =70Vdc,V
GS =0Vdc)
IDSS — — 10 Adc
Zero Gate Voltage Drain Leakage Current
(VDS =32Vdc,V
GS =0Vdc)
IDSS — — 5 Adc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 1 Adc
On Characteristics -- Side A (4,6) (Carrier)
Gate Threshold Voltage
(VDS =10Vdc,I
D=112Adc)
VGS(th) 1.0 1.5 2.0 Vdc
Gate Quiescent Voltage
(VDD =28Vdc,I
DA = 450 mAdc, Measured in Functional Test)
VGS(Q) 1.7 2.2 2.7 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=1.12Adc)
VDS(on) 0.05 0.14 0.3 Vdc
On Characteristics -- Side B (4,6) (Peaking)
Gate Threshold Voltage
(VDS =10Vdc,I
D=112Adc)
VGS(th) 1.0 1.5 2.0 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=1.12Adc)
VDS(on) 0.05 0.2 0.3 Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. VDDA and VDDB must be tied together and powered by a single DC power supply.
5. Side A and Side B are tied together for these measurements.
6. Each side of device measured separately.
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