2N6667-D - ON Semiconductor

Darlington Silicon

Power Transistors

. . . designed for general–purpose amplifier and low speed

switching applications.

•High DC Current Gain —

hFE = 3500 (Typ) @ IC = 4 Adc

•Collector–Emitter Sustaining Voltage — @ 200 mAdc

VCEO(sus) = 60 Vdc (Min) — 2N6667

= 80 Vdc (Min) — 2N6668

•Low Collector–Emitter Saturation Voltage —

VCE(sat) = 2 Vdc (Max)@ IC = 5 Adc

•Monolithic Construction with Built–In Base–Emitter Shunt Resistors

•TO–220AB Compact Package

•Complementary to 2N6387, 2N6388

COLLECTOR

EMITTER

 8 k  120

Figure 1. Darlington Schematic

BASE

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎ

2N6667

ÎÎÎÎÎ

2N6668

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎ

VCEO

ÎÎÎÎÎ

60

ÎÎÎÎÎ

80

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎÎ

VCB

ÎÎÎÎÎ

60

ÎÎÎÎÎ

80

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎ

VEB

ÎÎÎÎÎÎÎÎÎ

5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

— Peak

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

IC

ÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎ

10

15

ÎÎÎ

Î

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎÎ

IB

ÎÎÎÎÎÎÎÎÎ

250

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation @ TC = 25C

Derate above 25C

ÎÎÎÎÎ

PD

ÎÎÎÎÎÎÎÎÎ

65

0.52

ÎÎÎ

watts

W/C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation @ TA = 25C

Derate above 25C

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

PD

ÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎ

2

0.016

ÎÎÎ

Î

ÎÎÎ

Watts

W/C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction Temperature Range

ÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎÎ

–65 to +150

ÎÎÎ

C

(1) Indicates JEDEC Registered Data.

ON Semiconductor

 Semiconductor Components Industries, LLC, 2002

April, 2002 – Rev. 4 1Publication Order Number:

2N6667/D

2N6667

2N6668

PNP SILICON

DARLINGTON

POWER TRANSISTORS

10 AMPERES

60–80 VOLTS

65 WATTS

CASE 221A–09

TO–220AB

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

123

4

2N6667 2N6668

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2

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎ

1.92

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Ambient

ÎÎÎÎÎ

RθJA

ÎÎÎÎÎÎ

62.5

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (2) 2N6667

(IC = 200 mAdc, IB = 0) 2N6668

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎ

60

80

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current (VCE = 60 Vdc, IB = 0) 2N6667

(VCE = 80 Vdc, IB = 0) 2N6668

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

ICEO

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

1

ÎÎÎ

Î

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 60 Vdc, VEB(off) = 1.5 Vdc) 2N6667

(VCE = 80 Vdc, VEB(off) = 1.5 Vdc) 2N6668

(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125C) 2N6667

(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125C) 2N6668

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

ICEX

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

300

3

ÎÎÎ

Î

ÎÎÎ

µAdc

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)

ÎÎÎÎÎ

IEBO

ÎÎÎ

—

ÎÎÎÎ

5

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (IC = 5 Adc, VCE = 3 Vdc)

(IC = 10 Adc, VCE = 3 Vdc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

hFE

ÎÎÎ

Î

ÎÎÎ

1000

100

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

20000

—

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage (IC = 5 Adc, IB = 0.01 Adc)

(IC = 10 Adc, IB = 0.1 Adc)

ÎÎÎÎÎ

VCE(sat)

ÎÎÎ

—

ÎÎÎÎ

2

3

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage(IC = 5 Adc, IB = 0.01 Adc)

(IC = 10 Adc, IB = 0.1 Adc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VBE(sat)

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

2.8

4.5

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current Gain — Bandwidth Product (IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz)

ÎÎÎÎÎ

|hfe|

ÎÎÎ

20

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz)

ÎÎÎÎÎ

Cob

ÎÎÎ

—

ÎÎÎÎ

200

ÎÎÎ

pF

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain (IC = 1 Adc, VCE = 5 Vdc, f = 1 kHz)

ÎÎÎÎÎ

hfe

ÎÎÎ

1000

ÎÎÎÎ

—

ÎÎÎ

—

*Indicates JEDEC Registered Data

(2) Pulse Test: Pulse Width  300 µs, Duty Cycle  2%.

Figure 2. Switching Times Test Circuit

0

VCC

- 30 V

SCOPE

TUT

+ 4.0 V

tr, tf  10 ns

DUTY CYCLE = 1.0%

RC

D1, MUST BE FAST RECOVERY TYPES e.g.,

1N5825 USED ABOVE IB  100 mA

MSD6100 USED BELOW IB  100 mA

25 µs

D1

51

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

V2

APPROX

+ 8 V

V1

APPROX

- 12 V

 8 k  120

FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0

RB

2N6667 2N6668

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3

t, TIME (s)µ

80

40

20

020 40 80 100 120 160

Figure 3. Power Derating

T, TEMPERATURE (°C)

PD, POWER DISSIPATION (WATTS)

60

TATC

4

2

1

3

0 60 140

TA

TC

0.1

Figure 4. Typical Switching Times

IC, COLLECTOR CURRENT (AMPS)

5

0.7

0.3

0.2

0.2 10

VCC = 30 V

IC/IB = 250

IB1 = IB2

TJ = 25°C

tf

15

ts

tr

0.1

1

3

0.5 2

.td

0.5

2

7

0.3 0.7 3 7

10

Figure 5. Thermal Response

t, TIME (ms)

1

0.01

0.5

0.3

0.2

0.1

0.05

0.03

0.02

r(t) NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 1000500

ZθJC(t) = r(t) RθJC

RθJC = 1.92°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) RθJC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

D = 0.5

SINGLE PULSE

0.05

0.1

0.02

0.01

0.2

BONDING WIRE LIMIT

THERMAL LIMIT @ TC = 25°C

SECOND BREAKDOWN LIMIT

20

1

Figure 6. Maximum Safe Operating Area

2

0.02 10 20 100

TJ = 150°C

0.2

5

0.5

IC, COLLECTOR CURRENT (AMPS)

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

10

50

1

0.1

dc

27037

2N6667

2N6668

CURVES APPLY BELOW RATED VCEO

1 ms

100 µs

5 ms

3

0.03

0.05

0.3

530

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC – VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 6 is based on TJ(pk) = 150C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

< 150C. TJ(pk) may be calculated from the data in Figure 5.

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the

limitations imposed by second breakdown.

2N6667 2N6668

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4

10,000

1

Figure 7. Typical Small–Signal Current Gain

f, FREQUENCY (kHz)

10 2 5 10 20 50 100 200 1000

500

100

5000

hFE, SMALL-SIGNAL CURENT GAIN

20

200

500

2000

1000

50

TC = 25°C

VCE = 4 VOLTS

IC = 3 AMPS

300

0.1

Figure 8. Typical Capacitance

VR, REVERSE VOLTAGE (VOLTS)

30 12 5 20 10

0

10

C, CAPACITANCE (pF)

200

100

70

50

Cib Cob

500.2 0.5

TJ = 25°C

37 7030 300

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.1

Figure 9. Typical DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

0.2 0.3 0.5 0.7 1 2 10

500

300

hFE, DC CURRENT GAIN

TJ = 150°C

VCE = 3 V

200 7

20,000

5000

10,000

3000

2000

1000

35

Figure 10. Typical Collector Saturation Region

2.6

IB, BASE CURRENT (mA)

0.3 0.5 1 2 3 5 7 30

2.2

1.8

1.4

1

IC = 2 A

TJ = 25°C

4 A 6 A

0.6

0.7 2010

TJ = - 55°C

7000

700

TJ = 25°C

IC, COLLECTOR CURRENT (AMPS)

VBE(sat) @ IC/IB = 250

V, VOLTAGE (VOLTS)

Figure 11. Typical “On” Voltages

VCE(sat) @ IC/IB = 250

TJ = 25°C

VBE @ VCE = 3 V

0.1 0.2 0.3 0.5 0.7 1 2 10735

3

2

1.5

1

0.5

Figure 12. Typical Temperature Coefficients

+3

+2

0

-1

-2

-3

+5

+4

+1

2.5

0.1 0.2 0.3 0.5 0.7 1 2 10735

IC, COLLECTOR CURRENT (AMP)

V, TEMPERATURE COEFFICIENTS (mV/ C)°θ

-55°C to 25°C

25°C to 150°C

-55°C to 25°C

25°C to 150°C

θVB for VBE

-4

-5

∗θVC for VCE(sat)

hFE@VCE  3.0V

3

*IC/IB ≤

2N6667 2N6668

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5

105

Figure 13. Typical Collector Cut–Off Region

VBE, BASE-EMITTER VOLTAGE (VOLTS)

102

101

100

, COLLECTOR CURRENT (A)µIC

10-1

VCE = 30 V

TJ = 150°C

100°C

25°C

REVERSE FORWARD

103

104

+0.2+0.4 0 -0.2 -0.4 -0.6 -0.8 -1.2 -1.4-1

+0.6

2N6667 2N6668

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6

PACKAGE DIMENSIONS

CASE 221A–09

ISSUE AA

TO–220

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.147 3.61 3.73

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.018 0.025 0.46 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 --- 1.15 ---

Z--- 0.080 --- 2.04

B

Q

H

Z

L

V

G

N

A

K

F

123

4

D

SEATING

PLANE

–T–

C

S

T

U

R

J

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

2N6667 2N6668

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7

Notes

2N6667 2N6668

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8

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