SM6A27THE3/I - VISHAY - Datasheet.World

SM6A27T

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Revision: 24-Mar-15 1Document Number: 87914

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Surface Mount PAR® Transient Voltage Suppressors

High Temperature Stability and High Reliability Conditions

FEATURES

• Junction passivation optimized design passivated

anisotropic rectifier technology

•T

J = 175 °C capability suitable for high reliability

and automotive requirement

• Low leakage current

• Low forward voltage drop

• High surge capability

• Meets ISO7637-2 surge specification

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 245 °C

• AEC-Q101 qualified

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting,

especially for automotive load dump protection application.

MECHANICAL DATA

Case: DO-218AC

Molding compound meets UL 94 V-0 flammability rating

Base P/NHE3 - RoHS compliant, AEC-Q101 qualified

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

HE3 suffix meets JESD 201 class 2 whisker test

Polarity: Heatsink is anode

PRIMARY CHARACTERISTICS

VWM 22 V

VBR 27 V

PPPM (10 x 1000 μs) 4600 W

PD6 W

IRSM 90 A

IFSM 600 A

TJ max. 175 °C

Polarity Uni-directional

Package DO-218AC

DO-218 Compatible

MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL VALUE UNIT

Peak pulse power dissipation with 10/1000 μs waveform PPPM 4600 W

Power dissipation on infinite heatsink at TC = 25 °C (fig. 1) PD6.0 W

Non-repetitive peak reverse surge current for 10 μs/10 ms exponentially

decaying waveform IRSM 90 A

Maximum working stand-off voltage VWM 22.0 V

Peak forward surge current 8.3 ms single half sine-wave IFSM 600 A

Operating junction and storage temperature range TJ, TSTG -55 to +175 °C

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

DEVICE TYPE

BREAKDOWN VOLTAGE

VBR AT IT

(V)

TEST CURRENT

(mA)

STAND-OFF VOLTAGE

VWM

(V)

MIN. MAX.

SM6A27T 24 30 10 22

SM6A27T

www.vishay.com Vishay General Semiconductor

Revision: 24-Mar-15 2Document Number: 87914

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

(1) Measured on a 300 μs square pulse width

Note

(1) AEC-Q101 qualified

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

Fig. 1 - Power Derating Curve Fig. 2 - Load Dump Power Characteristics

(10 ms Exponential Waveform)

ADDITIONAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNIT

Zener voltage temperature coefficient IZ = 10 mA VZTC --36mV/°C

Clamping voltage for 10 μs/10 ms

exponentially decaying waveform IPP = 65 A VC- - 40.0 V

Instantaneous forward voltage IF = 6.0 A VF (1) - - 0.99 V

IF = 100 A - 0.94 -

Reverse leakage current Rated VWM

TJ = 25 °C IR

--0.5

μA

TJ = 175 °C - - 20.0

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL VALUE UNIT

Typical thermal resistance, junction to case RJC 0.95 °C/W

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE

SM6A27THE3/I (1) 2.550 I 750 13" diameter plastic tape and reel,

anode towards the sprocket hole

2.0

4.0

6.0

8.0

050 100 150 200

Power Dissipation (W)

Case Temperature (°C)

2000

1000

3000

4000

5000

6000

25 50 75 100 125 150 175

Load Dump Power (W)

Case Temperature (°C)

SM6A27T

www.vishay.com Vishay General Semiconductor

Revision: 24-Mar-15 3Document Number: 87914

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Fig. 3 - Pulse Waveform

Fig. 4 - Reverse Power Capability

Fig. 5 - Typical Instantaneous Forward Characteristics

Fig. 6 - Typical Reverse Characteristics

Fig. 7 - Typical Transient Thermal Impedance



100

150

010 20 30 40

Input Peak Pulse Current (%)

t - Time (ms)

= 10 μs

Peak Value

PPM

Half Value -

PPM

= 25 °C

Pulse Width (t

) is

Dened as the Point

Where the Peak Current

Decays to 50 % of I

PPM

Reverse Surge Power (W)

1000

10 000

10 100

Pulse Width (ms) - ½ I

Exponential Waveform

100

1.0

0.1

0.01

0.35 0.45 0.55 0.65 0.75 0.85 0.95

Instantaneous Forward Voltage (V)

Instantaneous Forward Current (A)

TJ = 150 °C

TJ = 25 °C

100

1.0

0.1

0.01

0.001

0.0001

Percentage of VBR (%)

Instantaneous Reverse Current (μA)

5203550658095

TJ = 25 °C

TJ = 175 °C

100

0.1

0.01

0.01 0.1 1 10 100

t - Pulse Width (s)

Transient Thermal Impedance (°C/W)

θJC

θJA

SM6A27T

www.vishay.com Vishay General Semiconductor

Revision: 24-Mar-15 4Document Number: 87914

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

0.116 (3.0)

0.093 (2.4)

0.628 (16.0)

0.592 (15.0)

0.539 (13.7)

0.524 (13.3)

0.366 (9.3)

0.343 (8.7)

0.406 (10.3)

0.382 (9.7)

0.342 (8.7)

0.327 (8.3)

0.413 (10.5)

0.374 (9.5)

0.028 (0.7)

0.020 (0.5)

0.138 (3.5)

0.098 (2.5)

Lead 1

0.098 (2.5)

0.059 (1.5)

Lead 2/Metal Heatsink

0.197 (5.0)

0.185 (4.7)

Mounting Pad Layout

0.413 (10.5)

0.374 (9.5)

0.091 (2.3)

0.067 (1.7)

0.116 (3.0)

0.093 (2.4)

0.150 (3.8)

0.126 (3.2)

0.366 (9.3)

0.343 (8.7)

0.606 (15.4)

0.583 (14.8)

DO-218AC

0.004 (0.10) (NOM.)

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